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13 Mar 2000

Volume 76, Issue 11, pp. 1353-1479

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Integration of Pb(Zr0.52Ti0.48)O3 epilayers with Si by domain epitaxy

A. K. Sharma, J. Narayan, C. Jin, A. Kvit, S. Chattopadhyay, and C. Lee

Appl. Phys. Lett. 76, 1458 (2000); http://dx.doi.org/10.1063/1.126063 (3 pages) | Cited 17 times

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High-quality lead zirconate titanate films (PZT) have been grown on yttrium barium copper oxide (YBCO) bottom electrode by domain epitaxy where integral multiples of lattice constants match across the interface. The YBCO films were epitaxially fabricated on Si (100) by introducing epilayer geometry of strontium titanate/magnesium oxide/titanium nitride. Pulsed-laser ablation was used to evaporate these five stoichiometric targets in a high vacuum chamber. X-ray diffraction and high-resolution transmission electron microscopy techniques were employed to gain understanding of the structure, crystallinity, and interfaces in these epilayers. The electrical characterization of the PZT films with evaporated silver contacts resulted in superior values of spontaneous polarization, remnant polarization, and coercive fields. This heterostructure opens a way for integration of epitaxial single-crystal PZT-based capacitors with silicon-based devices. © 2000 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
84.32.Tt Capacitors
77.80.-e Ferroelectricity and antiferroelectricity
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Strain-induced second-harmonic generation in pseudocubic Ba0.48Sr0.52TiO3 thin films

U. C. Oh, Jing Ma, G. K. L. Wong, J. B. Ketterson, and Jung Ho Je

Appl. Phys. Lett. 76, 1461 (2000); http://dx.doi.org/10.1063/1.126064 (3 pages) | Cited 4 times

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We report the observation of a strong second-order nonlinear optical response from epitaxial Ba0.48Sr0.52TiO3 thin films grown on MgO(001) by magnetron sputtering. The result is unexpected since the crystal structure of Ba0.48Sr0.52TiO3 is centrosymmetric under ambient conditions. A second-order nonlinear susceptibility d33 as large as 11 pm/V at a fundamental wavelength of 1.064 μm is observed in a 300 Å thick film. By studying a series of films with different strains, induced by a film–substrate lattice mismatch, we conclude that the resulting tetragonal distortion, presumably accompanied by a loss of inversion symmetry, is responsible for the second-harmonic generation. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Nk Insulators
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Cd Deposition by sputtering
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.65.An Optical susceptibility, hyperpolarizability
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