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13 Mar 2000

Volume 76, Issue 11, pp. 1353-1479

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Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures

R. A. Hogg, C. E. Norman, A. J. Shields, M. Pepper, and N. Iizuka

Appl. Phys. Lett. 76, 1428 (2000); http://dx.doi.org/10.1063/1.126053 (3 pages) | Cited 14 times

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We report a luminescence study of GaN/Al0.65Ga0.35N multi-quantum-well structures. The surface of the samples exhibits microcracking allowing the same quantum well to be measured under two different strain conditions. We can accurately describe the emission energies in the two strain conditions by considering piezoelectric polarization alone in contrast to the theoretical prediction that spontaneous polarization effects should dominate. © 2000 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
77.65.Ly Strain-induced piezoelectric fields
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors

Thermally activated electrical conductivity in thin GaN epitaxial films

J. Salzman, C. Uzan-Saguy, R. Kalish, V. Richter, and B. Meyler

Appl. Phys. Lett. 76, 1431 (2000); http://dx.doi.org/10.1063/1.126054 (3 pages) | Cited 14 times

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Temperature-dependent Hall measurements of thin GaN films subjected to He ion irradiation at ever increasing doses are used to study the electron transport in GaN. It is shown that electron transport is a thermally activated process with activation energies gradually increasing with reciprocal net carrier concentration, until a saturated value of the activation energy is reached. These experiments provide a direct verification that conductivity in thin GaN layers is controlled by potential barriers caused by depletion of carriers at grain boundaries in the material. Values of average grain size, density of surface states at the grain boundaries, and their energetics are extracted from the experiment. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.20.At Surface states, band structure, electron density of states
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Mm Grain and twin boundaries

Transient enhanced diffusion of implanted boron in 4H-silicon carbide

M. S. Janson, M. K. Linnarsson, A. Hallén, B. G. Svensson, N. Nordell, and H. Bleichner

Appl. Phys. Lett. 76, 1434 (2000); http://dx.doi.org/10.1063/1.126055 (3 pages) | Cited 23 times

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Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several μm into the samples when annealed at 1600 and 1700 °C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 °C is determined to 7×10−12 cm2/s, which is 160 times larger than the equilibrium B diffusivity given in the literature. © 2000 American Institute of Physics.
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61.72.up Other materials
66.30.J- Diffusion of impurities
61.82.Fk Semiconductors

Imaging and local current transport measurements of AlInP quantum dots grown on GaP

C. V. Reddy, V. Narayanamurti, J. H. Ryou, U. Chowdhury, and R. D. Dupuis

Appl. Phys. Lett. 76, 1437 (2000); http://dx.doi.org/10.1063/1.126056 (3 pages) | Cited 6 times

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Individual AlInP self-assembled quantum dots grown on a (100) GaP substrate are imaged and probed using ballistic electron emission microscopy (BEEM). The excellent nanometer scale lateral resolution of BEEM is utilized to inject carriers directly into a single quantum dot, and thus, current transport through the dot investigated without any direct electrical contact. The BEEM spectra taken on and off the dot revealed a local conduction-band offset between GaP and AlInP with a barrier height of ΔEc ∼ 0.13±0.01 eV. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

The use of a surfactant (Sb) to induce triple period ordering in GaInP

C. M. Fetzer, R. T. Lee, J. K. Shurtleff, G. B. Stringfellow, S. M. Lee, and T. Y. Seong

Appl. Phys. Lett. 76, 1440 (2000); http://dx.doi.org/10.1063/1.126057 (3 pages) | Cited 17 times

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A surfactant is used to induce an ordered structure in an epitaxial layer. The addition of small amounts of triethylantimony during the organometallic vapor phase epitaxy growth of GaInP on (001) GaAs substrates is shown to remove CuPt ordering with a resultant increase in band gap energy. Increasing the concentration of Sb in the vapor beyond a critical Sb to P ratio [Sb/P(v)] of 4×10−4 gives a reversal of this behavior. The band gap energy is observed to decrease by 50 meV at a concentration of Sb/P(v) = 1.6×10−3, coincident with the formation of an ordered phase with a period triple the normal lattice spacing along the [111] and [mathmath1] directions. The formation of this new ordered structure is believed to be related to high concentrations of Sb on the surface, which leads to a change in the surface reconstruction from (2×4)-like to (2×3)-like, as indicated by surface photoabsorption performed in situ. © 2000 American Institute of Physics.
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68.35.Rh Phase transitions and critical phenomena
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.20.Ps Other inorganic compounds

BGaInAs alloys lattice matched to GaAs

J. F. Geisz, D. J. Friedman, J. M. Olson, Sarah R. Kurtz, R. C. Reedy, A. B. Swartzlander, B. M. Keyes, and A. G. Norman

Appl. Phys. Lett. 76, 1443 (2000); http://dx.doi.org/10.1063/1.126058 (3 pages) | Cited 28 times

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We report the epitaxial growth of zinc-blende BxGa1−x−yInyAs and BxGa1−xAs on GaAs substrates with boron concentrations (x) up to 2%–4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1−xAs increases by only 4–8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1−x−yInyAs layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1−yInyAs layer with the same band gap. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.20.At Surface states, band structure, electron density of states
68.55.-a Thin film structure and morphology
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