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13 Mar 2000

Volume 76, Issue 11, pp. 1353-1479

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Quantum dots in photonic dots

M. V. Artemyev and U. Woggon

Appl. Phys. Lett. 76, 1353 (2000); http://dx.doi.org/10.1063/1.126029 (3 pages) | Cited 50 times

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A micrometer-sized spherical microcavity, the photonic dot, is made from semiconductor nanocrystals, the quantum dots. The coupling of electronic and photonic states is demonstrated for a single photonic dot by the observation of whispering gallery modes in the spectrum of spontaneous emission of the embedded CdSe quantum dots. © 2000 American Institute of Physics.
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78.66.Hf II-VI semiconductors
42.70.Qs Photonic bandgap materials

Spin-exchange optical pumping using a frequency-narrowed high power diode laser

I. A. Nelson, B. Chann, and T. G. Walker

Appl. Phys. Lett. 76, 1356 (2000); http://dx.doi.org/10.1063/1.126030 (3 pages) | Cited 16 times

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We describe a method for frequency narrowing commercial high power diode lasers from 2 to 0.1 nm bandwidth with modest loss of power (<2 dB). The resulting laser light is well suited for spin-exchange optical pumping, and we demonstrate that the polarization produced by a 2.5 W narrowband laser exceeds that of a 15 W array by 40% in our optical pumping system. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High-power wavelength-tunable circular-grating surface-emitting distributed Bragg deflector lasers

R. S. Penner, R. Bedford, H. Luo, S. Mendes, and M. Fallahi

Appl. Phys. Lett. 76, 1359 (2000); http://dx.doi.org/10.1063/1.126031 (3 pages)

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We present a promising approach to achieve wavelength tuning in high-power circular-grating surface-emitting lasers. A transparent electrode of indium tin oxide (ITO) was used to inject carriers into the second-order grating section of the device. Powers in excess of 225 mW and slope efficiencies of better than 0.40 mW/mA are reported. A continuous tuning range of 0.5 nm was achieved, while an overall wavelength shift of 1 nm was obtained for an ITO injection current of 30 mA. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.60.Fc Modulation, tuning, and mode locking

Modulation of the second-order susceptibility in GaAs/AlAs superlattices

D. C. Hutchings

Appl. Phys. Lett. 76, 1362 (2000); http://dx.doi.org/10.1063/1.126032 (3 pages) | Cited 6 times

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The modulation of the bulk-like second-order susceptibility with quantum well disordering is calculated for a GaAs/AlAs superlattice. The calculation is based on the A⋅p form of the susceptibility, which is the more appropriate form for semiconductors, and includes the influence of the Γ15c upper conduction band set which ensures the necessary absence of inversion symmetry. The undisordered structure has the degeneracy broken between the χxyz(2) and χzxy(2) tensor elements which is restored upon disordering. The shift of the half-band gap resonance gives a maximum modulation depth Δχxyz(2) ≈ 60 pm V−1 in the transparency window for this structure. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.65.An Optical susceptibility, hyperpolarizability
73.20.At Surface states, band structure, electron density of states

Low-voltage GaN:Er green electroluminescent devices

J. Heikenfeld, D. S. Lee, M. Garter, R. Birkhahn, and A. J. Steckl

Appl. Phys. Lett. 76, 1365 (2000); http://dx.doi.org/10.1063/1.126033 (3 pages) | Cited 16 times

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Green light emission has been measured from Er-doped GaN electroluminescent devices (ELDs) at an applied bias as low as 5 V. The GaN–Er ELDs were grown by solid source molecular beam epitaxy on Si (111) substrates. We have achieved this low-voltage operation (ten-fold reduction in optical turn-on voltage) by using heavily doped (∼0.01 Ω cm) Si substrates and by decreasing the GaN–Er layer thickness to several hundred nanometers. A simple device model is presented for the indium tin oxide/GaN–Er/Si/Al ELD. This work demonstrates the voltage excitation efficiency of Er3+ luminescent centers and the compatibility of GaN rare earth-doped ELDs with low-voltage drive circuitry. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.60.Jb Light-emitting devices

Importance of intermolecular interactions in the nonlinear optical properties of poled polymers

I. Liakatas, C. Cai, M. Bösch, M. Jäger, Ch. Bosshard, P. Günter, C. Zhang, and L. R. Dalton

Appl. Phys. Lett. 76, 1368 (2000); http://dx.doi.org/10.1063/1.126034 (3 pages) | Cited 21 times

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A series of phenylbithiophene stilbenes and phenyltetraenes were synthesized and their first-order molecular hyperpolarizabilities determined. Optical nonlinearities up to μβo = 9300×10−69 C m5/V were measured at 1907 nm. We show that intermolecular interactions have a large influence on the optical nonlinearity of the molecules in solution and in guest-host polymers with polymethylmethacrylate and polyquinoline as the host. We propose the use of a bulky donor group and a side chain perpendicular to the molecule’s conjugate bridge to reduce aggregation. Electro-optic coefficients as high as r33 = 30 pm/V at 1.55 μm in polymethylmethacrylate with 25 wt % chromophore loading were measured. © 2000 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
78.20.Jq Electro-optical effects
42.70.Jk Polymers and organics

Ultrafast saturable absorption at 1.55 μm in heavy-ion-irradiated quantum-well vertical cavity

J. Mangeney, J. L. Oudar, J. C. Harmand, C. Mériadec, G. Patriarche, G. Aubin, N. Stelmakh, and J. M. Lourtioz

Appl. Phys. Lett. 76, 1371 (2000); http://dx.doi.org/10.1063/1.126035 (3 pages) | Cited 18 times

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Measurements of absorption saturation in heavy-ion-irradiated InGaAs/InAlAs multiplequantum-well reflection-mode vertical-cavity devices have been performed with short pulses at 1.55 μm and repetition rates up to 10 GHz. The relaxation time was essentially independent of the pulse repetition rate and optical excitation fluence, with a lower value of 2.4 ps for an ion dose of 1012 cm−2. Efficient optical switching was obtained, with a saturation energy smaller than 12 pJ, a contrast ratio up to 3.5:1, and a switching amplitude up to 20% of the incident signal. A relaxation model accounting for capture and recombination on defect levels indicates an upper limit of 2 ps of the defect level recombination time. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.80.Jh Ion radiation effects
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Pc Optical bistability, multistability, and switching, including local field effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Self-frequency doubling in Yb3+ doped periodically poled LiNbO3:MgO bulk crystal

J. Capmany, E. Montoya, V. Bermúdez, D. Callejo, E. Diéguez, and L. E. Bausá

Appl. Phys. Lett. 76, 1374 (2000); http://dx.doi.org/10.1063/1.126036 (3 pages) | Cited 17 times

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Continuous-wave laser action from an Yb3+ doped periodically poled LiNbO3:MgO bulk crystal at 1.06 μm is reported. In addition, efficient and stable self-frequency-doubled laser action at 531 nm was obtained by quasiphase matching. Up to 10.5 mW of green output power is obtained from a total laser output power of 58 mW. The experiments were carried out by end pumping with a Ti:sapphire laser, as a surrogate source for a diode laser, at 980 nm. Laser operation was stable at room temperature. The results are compared with those corresponding to single-domain Yb-doped crystals. © 2000 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Pk Continuous operation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Thermal amplification of photoinduced optical anisotropy of p-cyanoazobenzene polymer films monitored by temperature scanning ellipsometry

Masatoshi Kidowaki, Takenori Fujiwara, Shin’ya Morino, Kunihiro Ichimura, and Joachim Stumpe

Appl. Phys. Lett. 76, 1377 (2000); http://dx.doi.org/10.1063/1.126037 (3 pages) | Cited 23 times

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The in situ observation of thermal alteration of photoinduced optical anisotropy of ultrathin films of polymethacrylates having p-cyanoazobenzene side chains exhibiting amorphous, crystalline, and liquid-crystalline phases was performed by means of temperature scanning ellipsometry. Whereas photogenerated optical anisotropy of amorphous polymer films disappeared above glass transition temperature, the photoinduced anisotropy of films of liquid crystalline and crystalline polymer films was significantly amplified by heat treatment. In case of crystalline polymers, amplified optical anisotropy was maintained even at 300 °C. © 2000 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
42.65.-k Nonlinear optics
42.65.An Optical susceptibility, hyperpolarizability
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
42.70.Mp Nonlinear optical crystals
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection

P. Borri, W. Langbein, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg

Appl. Phys. Lett. 76, 1380 (2000); http://dx.doi.org/10.1063/1.126038 (3 pages) | Cited 26 times

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Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed photon-echo response in the absorption regime to a prompt free polarization decay in the gain regime. This corresponds to a pronounced reduction of the dephasing time from 250 fs at zero bias to less than 50 fs at the maximum applied current. The four-wave mixing response at transparency of the device shows a composite structure with both photon echo and free-polarization decay. This is a signature of the digital occupation number in quantum dots, resulting at transparency in a signal from dots occupied with either zero or two excitons corresponding to absorption or gain of the dot ground state. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
73.61.Ey III-V semiconductors
42.60.By Design of specific laser systems
78.47.-p Spectroscopy of solid state dynamics
71.35.-y Excitons and related phenomena

Ultrafast hot-carrier dynamics in semiconductor saturable absorber mirrors

M. Joschko, P. Langlois, E. R. Thoen, E. M. Koontz, E. P. Ippen, and L. A. Kolodziejski

Appl. Phys. Lett. 76, 1383 (2000); http://dx.doi.org/10.1063/1.126039 (3 pages) | Cited 7 times

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Femtosecond pump-probe experiments have been used to study the ultrafast nonlinear dynamics of InGaAs/InP semiconductor saturable absorber mirrors. The relative contributions of absorption bleaching and induced absorption are investigated by varying the excitation fluence over more than four orders of magnitude, well beyond complete absorption saturation. Enhanced free carrier absorption due to highly excited carriers with an extended relaxation time of 2.8 ps dominates the differential reflectivity at ultrahigh fluences and has been studied via a two-color pump-probe measurement. © 2000 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
42.79.Bh Lenses, prisms and mirrors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics

Laser direct writing of phosphor screens for high-definition displays

J. M. Fitz-Gerald, A. Piqué, D. B. Chrisey, P. D. Rack, M. Zeleznik, R. C. Y. Auyeung, and S. Lakeou

Appl. Phys. Lett. 76, 1386 (2000); http://dx.doi.org/10.1063/1.126040 (3 pages) | Cited 21 times

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A laser-based forward transfer direct writing technique was used to deposit phosphor powder screens for high-resolution display applications. With this technique, called matrix-assisted pulsed-laser evaporation direct write, dense oxide phosphor powders of Y2O3:Eu (red) and Zn2SiO4:Mn (green) were deposited on alumina and polymer substrates. All processing was performed in air at room temperature. Cathodoluminescent measurements showed that the luminous efficiency of the phosphor powders was not degraded by the deposition process. A 6×6 red and green matrix with pixel sizes of 100 μm (250 lines per inch) with a 100 μm spot size is demonstrated; however, with smaller spot sizes this technique is easily scalable to pixel sizes <10 μm (>2500 lines per inch). © 2000 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
81.15.Fg Pulsed laser ablation deposition
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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