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Appl. Phys. Lett. 76, 1540 (2000); http://dx.doi.org/10.1063/1.126089 (3 pages)

Photoluminescence of CdSe nanocrystallites embedded in BaTiO3 matrix

Ji Zhou1, Longtu Li1, Zhilun Gui1, S. Buddhudu2, and Yan Zhou2

1State Key Lab of New Ceramics and Fine Processing and Department of Materials Science & Engineering, Tsinghua University, Beijing 100084, China
2School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

(Received 20 September 1999; accepted 25 January 2000)

This letter reports the photoluminescence properties of CdSe quantum dots (QDs) embedded in a ferroelectric BaTiO3 matrix. The main emission from the samples has been assigned to the band–edge transition of QDs. With an increase in the heat treatment temperature, the emission peak has been shifted to a longer wavelength. This shift has been attributed due to the dielectric environment effects of the matrix on the electronic structure of the QDs. The dependences of the peak position on the heat-treatment temperature and dot size are found in agreement with the theoretical simulation results reported previously. © 2000 American Institute of Physics.

© 2000 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.66.Hf

    II-VI semiconductors

  • 78.55.Et

    II-VI semiconductors

  • 73.21.-b

    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

  • 61.46.-w

    Structure of nanoscale materials

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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