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20 Mar 2000

Volume 76, Issue 12, pp. 1489-1630

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Electrical conduction properties of sputter-grown (Ba, Sr)TiO3 thin films having IrO2 electrodes

Ju Cheol Shin, Cheol Seong Hwang, and Hyeong Joon Kim

Appl. Phys. Lett. 76, 1609 (2000); http://dx.doi.org/10.1063/1.126111 (3 pages) | Cited 14 times

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The electrical conduction behavior of sputter-grown (Ba, Sr)TiO3(BST) thin films having IrO2 electrodes were studied under the assumption of a fully accumulated film. In the film-thickness range studied (40–80 nm), the dielectric constants and their electric field dependencies were found to be independent of the film thickness. Contrary to similar BST films grown on Pt electrodes, the leakage current density decreased with increasing film thickness at a given field. The phenomena were explained from the electric-field depression effect inside the film due to the accumulated negative space charges in the films. The leakage current conductions were controlled by the Poole–Frenkel mechanism in the low field whereas it changed to thermionic field emission in the high-field region. The dielectric constant obtained from the Poole–Frenkel fitting was approximately 300, which was in a qualitative agreement with the value obtained from the low-frequency capacitance measurement. The calculated interfacial potential-barrier height at zero volt and effective mass of electrons were 1.03 eV and 0.06m0, respectively, from the thermionic field emission fittings. © 2000 American Institute of Physics.
Show PACS
77.22.Ch Permittivity (dielectric function)
73.50.Fq High-field and nonlinear effects
79.40.+z Thermionic emission
73.61.Ng Insulators
77.55.-g Dielectric thin films
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Growth of ferroelectric oxide films on n-GaN/c-sapphire structures

V. Fuflyigin, A. Osinsky, F. Wang, P. Vakhutinsky, and P. Norris

Appl. Phys. Lett. 76, 1612 (2000); http://dx.doi.org/10.1063/1.126112 (3 pages) | Cited 17 times

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High-quality (Pb, La)(Ti, Zr)O3 films were grown on n-GaN. The film thickness ranged from 0.5 to 5 μm. The material was prepared by a chemical solution method with compositions of 8/65/35 and 0/52/48. The films grown on GaN buffered with a thin layer of indium in oxide were highly textured and exhibited excellent ferroelectric properties with Pr = 20–26 μC/cm2. A large field-induced birefringence of 0.025 was measured in the film with a composition of 8/65/35 under a field strength of 2×105 V/cm. © 2000 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.66.Nk Insulators
78.20.Fm Birefringence
78.20.Jq Electro-optical effects
77.80.Dj Domain structure; hysteresis

Piezoelectric properties of rhombohedral Pb(Zr, Ti)O3 thin films with (100), (111), and “random” crystallographic orientation

David V. Taylor and Dragan Damjanovic

Appl. Phys. Lett. 76, 1615 (2000); http://dx.doi.org/10.1063/1.126113 (3 pages) | Cited 93 times

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The longitudinal d33 piezoelectric coefficient was studied in rhombohedral Pb(Zr0.6Ti0.4)O3 thin films with (111), (100), and “random” orientation. The largest d33 was found in (100)-oriented films and the smallest along the polarization direction in (111)-oriented films. These results are in a good qualitative agreement with recent theoretical predictions [Du, Zheng, Belegundu, and Uchino, Appl. Phys. Lett. 72, 2421 (1998)]. The field dependence of d33 was also investigated as a function of crystallographic orientation of the films. It was found that (100)-oriented films with the highest piezoelectric coefficient exhibit the weakest nonlinearity. Observed variation in the piezoelectric nonlinearity with film orientation can be fully explained by taking into account domain-wall contributions, which are dependent on film orientation. © 2000 American Institute of Physics.
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77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology

Electron emission from thin-film ferroelectric cathodes

F. Liu and C. B. Fleddermann

Appl. Phys. Lett. 76, 1618 (2000); http://dx.doi.org/10.1063/1.126114 (3 pages) | Cited 8 times

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Electron emission from thin-film (<1 μm thick) ferroelectric cathodes has been investigated. The cathodes were made using sol-gel deposition and standard microelectronic patterning techniques and were excited using either dc or pulsed bias. Repeatable emission current densities up to 10 μA/cm2 were measured from 0.8-μm-thick lead-niobium-zirconium-titanate cathodes driven in the pulsed mode with switch voltages up to 22 V. Intermittent emission up to 20 mA/cm2 was measured for higher switch voltages. The dependence of emission current on switch voltage, grid dimensions, and extraction voltage will be presented. © 2000 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
79.70.+q Field emission, ionization, evaporation, and desorption
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