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20 Mar 2000

Volume 76, Issue 12, pp. 1489-1630

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InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

Jaehee Cho, S. Cho, B. J. Kim, S. Chae, C. Sone, O. H. Nam, J. W. Lee, Y. Park, and T. I. Kim

Appl. Phys. Lett. 76, 1489 (2000); http://dx.doi.org/10.1063/1.126072 (3 pages) | Cited 3 times

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An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge waveguide by chemically assisted ion beam etching technique. The observed threshold current was 375 mA with threshold voltage of 15.1 V for 500×3 μm2 devices. The emission of the DBR laser occurred in a single longitudinal mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was found to be more than 13 dB until a current injection of 1 A. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.05.Ea III-V semiconductors
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.66.Fd III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Self-aligned current aperture in native oxidized AlInAs buried heterostructure InGaAsP/InP distributed feedback laser

Zhi-jie Wang, Soo-jin Chua, Zi-ying Zhang, Fan Zhou, Jing-yuan Zhang, Xiao-jie Wang, Wei Wang, and Hong-liang Zhu

Appl. Phys. Lett. 76, 1492 (2000); http://dx.doi.org/10.1063/1.126073 (3 pages) | Cited 2 times

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A InGaAsP/InP self-aligned, native oxidized buried heterostructure (BH) distributed feedback (DFB) laser is proposed. It is as easy to process as the ridge waveguide DFB laser and has superior performance. The current aperture can be easily controlled without selective regrowth. The laser exhibits a low threshold of 5.0 mA with 36 dB side mode suppression ratio at the emission wavelength of 1.562 μm. It emits in a single lobe with full width at half maximum angles of 33.6° and 42.6° for the lateral and vertical fields, respectively. Its beam is more circular than that of the as-grown BH laser because the lower refractive index of oxide compared to the as-grown layer and results in a larger lateral optical confinement. Its characteristic temperature (T0) is 50 K at room temperature but increases in value at the higher temperature range. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Midinfrared emission from InGaN/GaN-based light-emitting diodes

Daniel Hofstetter, Jérôme Faist, and David P. Bour

Appl. Phys. Lett. 76, 1495 (2000); http://dx.doi.org/10.1063/1.126074 (3 pages) | Cited 4 times

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Midinfrared emission on violet, blue, and green InGaN light-emitting diodes has been measured between 85 and 300 K for various injection current densities. We found that the diode with the highest In composition in the active region had the shortest midinfrared emission wavelength and vice versa. With increasing In content, a significantly decreasing amount of TM polarization was observed in the midinfrared emission spectrum. This result suggests that the density of states in the higher-In content devices corresponds to a zero-dimensional electronic system rather than a two-dimensional electron gas. In contrast to this, the violet light-emitting diode exhibited a higher degree of TM polarization; similar to a red InGaP-based quantum-well device. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
85.60.Jb Light-emitting devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Ti:LiNbO3 waveguide polarizer with a Zn-doped overlayer prepared by liquid-phase epitaxy

Junichiro Ichikawa, Satoshi Uda, Kiyoshi Shimamura, Tsuguo Fukuda, Hirotoshi Nagata, and Junichiro Minowa

Appl. Phys. Lett. 76, 1498 (2000); http://dx.doi.org/10.1063/1.126075 (3 pages) | Cited 3 times

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Ti:LiNbO3 waveguide polarizers were obtained by an epitaxial growth of a Zn-doped LiNbO3 layer on the Ti:LiNbO3 waveguide. The film growth was carried out by a liquid-phase-epitaxy technique using a Li2O–V2O5 flux. Such an X-cut waveguide polarizer achieved a TE-mode (extraordinary ray) propagation with an extinction ratio over 30 dB at a light wavelength of 1.55 μm. This technique can be easily applied to Z- and Y-cut waveguide polarizers with TM- and TE-mode propagation, respectively. © 2000 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers

Nanosecond transients in the electroluminescence from multilayer blue organic light-emitting devices based on 4,4′-bis(2,2′diphenyl vinyl)-1,1′-biphenyl

V. Savvate’ev, J. H. Friedl, L. Zou, J. Shinar, K. Christensen, W. Oldham, L. J. Rothberg, Z. Chen-Esterlit, and R. Kopelman

Appl. Phys. Lett. 76, 1501 (2000); http://dx.doi.org/10.1063/1.126076 (3 pages) | Cited 13 times

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Nanosecond electroluminescence (EL) overshoots observed when multilayer blue 4,4′-bis(2,2′-diphenyl vinyl)-1,1′-biphenyl (DPVBi)-based organic light-emitting devices (OLEDs) are excited by rectangular voltage pulses are described. The overshoots occur at the voltage turn-off and exceed the cw brightness by up to an order of magnitude. Time-resolved images of the OLEDs demonstrate that the emission from most of the sample surface decays with a single time constant τ1 = 13±3 ns. This decay is attributed to recombination of charges which accumulate at the interface of the electron and hole transporting layers, possibly at intrinsic trapping sites. In areas of increased electron injection and EL, such as cathode edges and morphological defects, a second slower decay time 20 ns<τ2<1 μs is observed, apparently due to release of carriers from localized trap states in the organic/cathode interface. Only marginal variations in τ1 are found between bright and dim areas of the devices. At a bias of 10 V, the amplitude of the overshoot is found to peak at a pulse duration of ∼ 20 μs. Its behavior is believed to result from increased quenching of singlet excitons by the accumulated charges. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.47.-p Spectroscopy of solid state dynamics
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.25.+i Surface conductivity and carrier phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers

B. Romero, J. Arias, I. Esquivias, and M. Cada

Appl. Phys. Lett. 76, 1504 (2000); http://dx.doi.org/10.1063/1.126077 (3 pages) | Cited 22 times

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We have developed a simple model for the carrier capture and escape processes in quantum-well (QW) lasers, which yields an analytical expression for the ratio of the carrier capture and escape times. It predicts a decrease in the escape time with injected carrier density due to the state filling effect. It also shows an exponential dependence of the escape time on the effective barrier height and on the inverse of the temperature. A comparison between experimental and calculated values for InGaAs/GaAs QW lasers is presented showing a good agreement. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Near-infrared to visible up-conversion in a forward-biased Schottky diode with a p-doped channel

J. S. Sandhu, A. P. Heberle, B. W. Alphenaar, and J. R. A. Cleaver

Appl. Phys. Lett. 76, 1507 (2000); http://dx.doi.org/10.1063/1.126078 (3 pages) | Cited 16 times

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Near-infrared radiation of wavelength 1.5 μm is up-converted to a visible wavelength of 818 nm by internal photoemission in a Schottky diode with a modulation p-doped channel. The near-infrared light incident upon the metal–semiconductor interface excites electrons from the metal into the semiconductor. The electrons then drift into the quantum well where they recombine radiatively, producing luminescence at the shorter wavelength of 818 nm. The intensity of the luminescence is strongly dependent on bias, and turns on at a forward bias of −0.7 V. © 2000 American Institute of Physics.
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85.30.Hi Surface barrier, boundary, and point contact devices
78.66.Fd III-V semiconductors
73.40.Ns Metal-nonmetal contacts
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Two-photon photocurrent imaging of vertical cavity surface emitting lasers

Chris Xu, Leo M. F. Chirovsky, W. S. Hobson, J. Lopata, Wayne H. Knox, John E. Cunningham, William Y. Jan, and L. A. D’Asaro

Appl. Phys. Lett. 76, 1510 (2000); http://dx.doi.org/10.1063/1.126079 (3 pages) | Cited 1 time

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We show that two-photon photocurrent imaging can be used to nondestructively study vertical cavity surface emitting lasers on a microscopic level. In particular, we study the aperture isolation created by shallow ion implantation. The combination of two-photon backside imaging and a probe station is ideal for internal and full wafer characterization. The required peak and average power levels for testing can be easily satisfied by available compact ultrafast laser sources, making the technique practical and user friendly. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
79.60.Dp Adsorbed layers and thin films
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Birefringence compensation in single solid-state rods

R. Fluck, M. R. Hermann, and L. A. Hackel

Appl. Phys. Lett. 76, 1513 (2000); http://dx.doi.org/10.1063/1.126080 (3 pages) | Cited 8 times

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Various methods for compensating birefringence depolarization in solid-state rods are theoretically and experimentally analyzed and compared. Gaussian and flat top beam profiles are investigated. The efficiency in depolarization loss reduction using different techniques is discussed in terms of beam profile, rod fill factor, and thermal heat load. In Nd:yttrium–aluminum–garnet, the depolarization loss can be efficiently reduced below 5% with a compensating quarter-waveplate, up to 20 W heat load for a flat top beam and up to 70 W for a gaussian beam. © 2000 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.25.Lc Birefringence
78.20.Fm Birefringence

Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes

C. W. Liu, M. H. Lee, Miin-Jang Chen, I. C. Lin, and Ching-Fuh Lin

Appl. Phys. Lett. 76, 1516 (2000); http://dx.doi.org/10.1063/1.126081 (3 pages) | Cited 44 times

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An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
81.05.Cy Elemental semiconductors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
71.20.Mq Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
72.30.+q High-frequency effects; plasma effects
73.50.Mx High-frequency effects; plasma effects
73.20.At Surface states, band structure, electron density of states
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.25.+i Surface conductivity and carrier phenomena

A cross-correlation spectroscopy in subterahertz region using an incoherent light source

O. Morikawa, M. Tonouchi, and M. Hangyo

Appl. Phys. Lett. 76, 1519 (2000); http://dx.doi.org/10.1063/1.126082 (3 pages) | Cited 19 times

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A subterahertz (sub-THz) spectroscopic system using a multimode laser diode and photoconductive antennas (PA) has been proposed. It employs a random fluctuation of the light intensity to produce the subterahertz radiation from the emitter PA and also to trigger the detector PA. The signal is obtained as the cross correlation between the sub-THz radiation amplitude and laser light intensity. The decrease in the amplitude and phase delay of the radiation due to transmission from a sample can be calculated from the signal in a broad spectral region of sub-THz. This system is applied to the measurement of the complex refractive indices of Si wafers. The obtained dispersion of the refractive indices is well explained by the Drude model. © 2000 American Institute of Physics.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.Db Elemental semiconductors and insulators
73.61.Cw Elemental semiconductors
78.30.Am Elemental semiconductors and insulators

Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers

P. M. Smowton, P. Blood, and W. W. Chow

Appl. Phys. Lett. 76, 1522 (2000); http://dx.doi.org/10.1063/1.126083 (3 pages) | Cited 8 times

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We compare the results of a microscopic laser theory with gain and recombination currents obtained from experimental spontaneous emission spectra. The calculated absorption spectrum is first matched to that measured on a laser, ensuring that the quasi-Fermi levels for the calculation and the experiment (spontaneous emission and gain) are directly related. This allows us to determine the inhomogeneous broadening in our experimental samples. The only other inputs to the theory are literature values of the bulk material parameters. We then estimate the nonradiative recombination current associated with the well and waveguide core from a comparison of measured and calculated recombination currents. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors

Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu

D. S. Lee, J. Heikenfeld, R. Birkhahn, M. Garter, B. K. Lee, and A. J. Steckl

Appl. Phys. Lett. 76, 1525 (2000); http://dx.doi.org/10.1063/1.126084 (3 pages) | Cited 44 times

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Orange and yellow-colored light emission has been achieved at room temperature in the same elecroluminescent device (ELD) made on GaN thin films codoped with Er and Eu. The GaN film was grown by molecular-beam epitaxy on Si (111) substrates using solid sources for Ga, Er and Eu and a plasma source for N2. Simple Schottky devices were fabricated on the GaN films using indium–tin oxide (ITO) transparent electrodes. ELD spectra show that the yellow and orange colors result from the combination of green emission from Er (537, 558 nm) and red emission from Eu (621 nm). A color change was observed with applied bias, producing yellow at higher bias (−100 V) and orange at lower bias (−70 V). We have fabricated both relatively small (∼250 μm) and large (1.45 mm) ELDs. Parameters for the chromaticity diagram were calculated to be x=0.382, y=0.605 for the yellow emission and x=0.467, y=0.523 for the orange emission. This work shows the possibility of achieving any intermediate color in the spectrum from green to red by adjusting the concentration of Er and Eu in GaN. © 2000 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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