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27 Mar 2000

Volume 76, Issue 13, pp. 1641-1784

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Electro-optic effect in Ba1−xPbxTiO3 films

V. Fuflyigin, F. Wang, H. Jiang, J. Zhao, and P. Norris

Appl. Phys. Lett. 76, 1641 (2000); http://dx.doi.org/10.1063/1.126121 (3 pages) | Cited 3 times

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High quality Ba1−xPbxTiO3 (x = 0–0.25) films were grown on R-Al2O3 in a wide thickness range of 0.5–3 μm. Significant improvement of the films’ crystallinity and optical quality was observed in the presence of lead oxide for the films prepared at 650–700 °C. Strong texture of (110) type was observed in these films. The material is transparent at 350–2000 nm, indicating the possibility of its application in light controlling devices at wavelengths used in optical communication: 1300 and 1500 nm. Maximum field induced relative phase shift of 0.22 rad was measured in the film with composition of Ba0.9Pb0.1TiO3 under a field strength of 3×106 V/cm. © 2000 American Institute of Physics.
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78.20.Jq Electro-optical effects
78.66.Nk Insulators
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology

Length scales of charge transport in organic photorefractive materials

A. Leopold, M. Grasruck, U. Hofmann, M. A. Kol’chenko, and S. J. Zilker

Appl. Phys. Lett. 76, 1644 (2000); http://dx.doi.org/10.1063/1.126122 (3 pages) | Cited 2 times

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The drift length of charge carriers has a significant influence on the dynamics of the space-charge field in organic photorefractive materials. This letter introduces a relatively simple method for the determination of the drift length, which takes into account that the charge carrier mobility depends on the sample thickness. By combining results of time-of-flight and holographic time-of-flight experiments using the stochastic transport model of Scher and Montroll, the effective drift length can be determined as 2.4 μm in the investigated photorefractive glass. © 2000 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
72.20.Fr Low-field transport and mobility; piezoresistance
42.40.My Applications
72.80.Le Polymers; organic compounds (including organic semiconductors)
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers

W. W. Chow, H. Amano, and I. Akasaki

Appl. Phys. Lett. 76, 1647 (2000); http://dx.doi.org/10.1063/1.126123 (3 pages) | Cited 18 times

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Filamentation and, consequently, output beam quality in InGaN quantum-well lasers are found to be strong functions of quantum-well width because of the interplay of quantum-confined Stark effect and many-body interactions. For an In0.2Ga0.8N/GaN gain medium, the antiguiding factor in a thick 4 nm quantum well is considerably smaller than that for a narrow 2 nm one. As a result, lasers with the thicker quantum well maintain fundamental-mode operation with wider stripe widths and at significantly higher excitation levels. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.20.Jq Electro-optical effects

Improvement of output coupling efficiency of organic light-emitting diodes by backside substrate modification

C. F. Madigan, M.-H. Lu, and J. C. Sturm

Appl. Phys. Lett. 76, 1650 (2000); http://dx.doi.org/10.1063/1.126124 (3 pages) | Cited 113 times

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The emission intensity of an organic light-emitting diode at normal viewing angle and the total external emission efficiency have been increased by factors of 9.6 and 3.0, respectively, by applying spherically shaped patterns to the back of the device substrate. The technique captures light previously lost to waveguiding in the substrate and, with proper choice of substrate, light previously lost to waveguiding in the organic/anode layers. A method of applying the technique using laminated films and an optical model for evaluating coupling efficiency are also presented. © 2000 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
42.65.Wi Nonlinear waveguides
42.82.Et Waveguides, couplers, and arrays

Nonvolatile two-color holographic recording in Tb-doped LiNbO3

Myeongkyu Lee, Shunji Takekawa, Yasunori Furukawa, Kenji Kitamura, Hideki Hatano, and Satoru Tanaka

Appl. Phys. Lett. 76, 1653 (2000); http://dx.doi.org/10.1063/1.126125 (3 pages) | Cited 16 times

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We have found that Tb-doped near-stoichiometric LiNbO3 crystals have three different types of energy levels: ultraviolet (UV) absorption centers just above the valence band, shallow electron traps slightly below the conduction band, and deep traps located about 1.9 eV (λ ≈ 650 nm) below it. Using this shallow trap as an intermediate energy state, two-color holographic recording has been carried out at λ = 852 nm with a UV gating light at 313 nm. A few % of diffraction efficiency was achieved, and the measured two-color sensitivity was 0.01–0.02 cm/J. No reduction of diffraction efficiency was observed during 4 h continuous readout, and the bit-error-rate of constructed digital hologram was less than 10−5. © 2000 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.40.Ht Hologram recording and readout methods
42.70.Ln Holographic recording materials; optical storage media
78.40.Ha Other nonmetallic inorganics
71.55.Ht Other nonmetals

Eu3+ emission in an anisotropic photonic band gap environment

S. G. Romanov, A. V. Fokin, and R. M. De La Rue

Appl. Phys. Lett. 76, 1656 (2000); http://dx.doi.org/10.1063/1.126126 (3 pages) | Cited 33 times

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Eu3+ ions have been incorporated into the silica skeleton of synthetic opal. The effect of the anisotropic photonic band gap structure upon the emission characteristics has been studied in the case where the emission bandwidth is narrower than the stop-band. Either suppression or enhancement of the spontaneous emission at the wavelength of the radiative transition has been observed, depending on the relative position of the emission band and the stop-band. © 2000 American Institute of Physics.
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42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
71.55.Ht Other nonmetals
78.55.Hx Other solid inorganic materials

Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

D. Zhou and L. J. Mawst

Appl. Phys. Lett. 76, 1659 (2000); http://dx.doi.org/10.1063/1.126127 (3 pages) | Cited 18 times

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A two-step metalorganic chemical vapor deposition growth process is used to fabricate antiguided vertical-cavity surface-emitting lasers (VCSELs) incorporating a simplified-antiresonant reflecting optical waveguide (S-ARROW) design. Preliminary results show single-mode cw operation up to 1 mW output power from a 12 μm-diam (λ = 930 nm) S-ARROW VCSEL with a large lateral index step (Δn = 0.1). Modal discrimination in the S-ARROW-VCSEL is calculated using a fiber-mode approximation and device optimization for high-single-mode powers is discussed. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.79.Gn Optical waveguides and couplers
81.05.Dz II-VI semiconductors

A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser

Y.-K. Song, H. Zhou, M. Diagne, A. V. Nurmikko, R. P. Schneider, C. P. Kuo, M. R. Krames, R. S. Kern, C. Carter-Coman, and F. A. Kish

Appl. Phys. Lett. 76, 1662 (2000); http://dx.doi.org/10.1063/1.126128 (3 pages) | Cited 50 times

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We have fabricated and studied a violet (λ = 403 nm) vertical cavity surface emitting laser structure, composed of an InGaN multiple quantum well active medium and a pair of high reflectivity dielectric mirrors. Lasing under high repetition rate (76 MHz) pulsed optical pumping has been achieved at temperatures up to T = 258 K at average pump power of approximately 30 mW. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Surface plasmon resonance phase imaging

Ariel G. Notcovich, V. Zhuk, and S. G. Lipson

Appl. Phys. Lett. 76, 1665 (2000); http://dx.doi.org/10.1063/1.126129 (3 pages) | Cited 27 times

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We present a promising optical system and technique for detection, imaging, and visualization of minimal changes, of the order of 10−6 in refractive index, in the near field. The system is based on phase imaging of excited surface plasmons in a conducting layer in contact with a sample. This technique is shown here to be sensitive enough to image the flow of helium and argon gas in a nitrogen atmosphere. Its application to biological and chemical research is suggested. © 2000 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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Application of carbon nanotubes as electrodes in gas discharge tubes

R. Rosen, W. Simendinger, C. Debbault, H. Shimoda, L. Fleming, B. Stoner, and O. Zhou

Appl. Phys. Lett. 76, 1668 (2000); http://dx.doi.org/10.1063/1.126130 (3 pages) | Cited 41 times

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Gas-tube protector units are used in telecom network interface device boxes and central office switching gears to provide protection from lightning and alternating current power cross faults on the telecom network. Current gas discharge tube (GDT) protector units are unreliable from the standpoint of mean turn-on voltage and run-to-run variability. Molybdenum electrodes with various interlayer materials were coated with single-walled carbon nanotubes and analyzed for both electron field emission and discharge properties. A mean direct current breakdown voltage of 448.5 V and a standard deviation of 4.8 V over 100 surges were observed in nanotube-based GDTs with 1 mm gap spacing between the electrodes. The breakdown reliability is a factor of 4–20 better and the breakdown voltage is ∼30% lower than the two commercial products measured. The enhanced performance shows that nanotube-based GDTs are attractive overvoltage protection units in advanced telecom networks. © 2000 American Institute of Physics.
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52.80.-s Electric discharges
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
81.05.ub Fullerenes and related materials
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
84.47.+w Vacuum tubes
79.70.+q Field emission, ionization, evaporation, and desorption
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
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Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

S. F. Chichibu, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Korii, T. Deguchi, T. Sota, and S. Nakamura

Appl. Phys. Lett. 76, 1671 (2000); http://dx.doi.org/10.1063/1.126131 (3 pages) | Cited 29 times

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The importance of doping or alloying with In for obtaining high external quantum efficiency was shown for GaN-based single-quantum-well (SQW) structures in terms of localization effects due to quantum-disk (Q-disk [M. Sugawara, Phys. Rev. B 51, 10743 (1995)])-size potential minima in the QW plane. The ultraviolet light-emitting diode with lightly In-alloyed InGaN SQW exhibited an electroluminescence peak from the band-tail states. Monochromatic cathodoluminescence mapping images of In0.03Ga0.97N SQW indicated the presence of Q-disk-size effective bandgap variation. Furthermore, cubic InGaN QW which does not suffer from the piezoelectric field normal to the QW plane, also exhibited a broad band-tail. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.60.Fi Electroluminescence
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.35.Gg Exciton-mediated interactions
78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Influence of gas flow stoichiometry on the luminescence of organometallic-vapor-phase-grown ZnxCd1−xSe epilayers

X. B. Zhang and S. K. Hark

Appl. Phys. Lett. 76, 1674 (2000); http://dx.doi.org/10.1063/1.126132 (3 pages) | Cited 1 time

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ZnxCd1−xSe epilayers were grown by organometallic vapor phase epitaxy using various VI/II flow ratios at a temperature of 420 °C. Cathodoluminescence (CL) spectroscopy and imaging were used to study their luminescent properties. Both near-band gap emissions (NBE) and deep-level emissions (DLE) were found in the CL spectra. We found that the width of the NBE peak and the intensity of the DLE relative peak to that of NBE increase with an increase in the VI/II flow ratio. Both effects are traced to the presence of pyramidal growth hillocks on the surface of the epilayer and to their increased density at high VI/II ratios. Monochromatic CL images show that there are two kinds of luminescent centers contributing to the NBE. The one that emits at slightly lower energies is only found, together with the DLE centers, within the growth hillocks. The one that emits at a slightly higher energy is found from surrounding areas. The concomitant appearance of DLE centers and low energy NBE centers shows that they share a common origin. Excitation intensity dependence of the photoluminescence of the NBE centers identifies as donor–acceptor-pair recombinations. © 2000 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Dz II-VI semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Hydrogen-assisted pulsed-laser deposition of (001)CeO2 on (001) Ge

D. P. Norton, J. D. Budai, and M. F. Chisholm

Appl. Phys. Lett. 76, 1677 (2000); http://dx.doi.org/10.1063/1.126133 (3 pages) | Cited 18 times

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The growth of epitaxial (001)CeO2 on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method is reported. Hydrogen gas is introduced during film growth in order to reduce or eliminate the presence of the GeO2 from the semiconductor surface during the initial nucleation of the metal–oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO2 is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal–oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria, the metal–oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. © 2000 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
65.20.-w Thermal properties of liquids
65.40.gd Entropy
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Step-by-step excimer laser induced crystallization of a-Si:H

P. Lengsfeld, N. H. Nickel, and W. Fuhs

Appl. Phys. Lett. 76, 1680 (2000); http://dx.doi.org/10.1063/1.126134 (3 pages) | Cited 39 times

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Amorphous silicon films (a-Si:H) with a hydrogen content of 10 at. % were crystallized employing a step-by-step crystallization method. Structural changes during the sequential crystallization process were monitored by Raman spectrometry. Initially, at low laser fluences EL, a two-layer system is created. Independent of the thickness of the a-Si:H layer explosive crystallization of a thin surface layer is observed at EL ≥ 100 mJ/cm2 confirming recent theoretical results. Crystallization is accompanied by dehydrogenation. In completely crystallized poly-Si a residual H concentration of up to 5 at. % was observed. © 2000 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys
81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators
78.66.Jg Amorphous semiconductors; glasses
42.62.-b Laser applications
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
79.20.Ds Laser-beam impact phenomena
68.35.Rh Phase transitions and critical phenomena

Heteroepitaxial growth of cubic GaN on Si(001) coated with thin flat SiC by plasma-assisted molecular-beam epitaxy

D. Wang, Y. Hiroyama, M. Tamura, M. Ichikawa, and S. Yoshida

Appl. Phys. Lett. 76, 1683 (2000); http://dx.doi.org/10.1063/1.126135 (3 pages) | Cited 15 times

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High-quality cubic GaN films were grown on Si(001) coated with flat ultrathin SiC under different Ga/N flux ratios. The 2.5-nm-thick cubic SiC film proved to be an effective buffer layer for cubic GaN growth on Si(001). Under a Ga-rich condition, films with local atomically flat surfaces were obtained, and the x-ray diffraction full-width at half maximum of (002) peak was 19 min for a 0.82-μm-thick film. The reduced SiC surface roughness decreased the defect density in the GaN epilayers. Under a N-rich condition, the GaN films showed statistical roughening of the surface and a characteristic columnar structure. Under the Ga-rich condition, the columns grew up and then laterally coalesced, so that an atomically flat surface with flat areas in size from 0.05 to 0.40 μm was formed. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates

D. J. As, T. Frey, D. Schikora, K. Lischka, V. Cimalla, J. Pezoldt, R. Goldhahn, S. Kaiser, and W. Gebhardt

Appl. Phys. Lett. 76, 1686 (2000); http://dx.doi.org/10.1063/1.126136 (3 pages) | Cited 9 times

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The molecular beam epitaxy of cubic GaN on Si(001) substrates, which were covered by a 4 nm thick β-SiC layer, is reported. The structural and optical properties of the cubic GaN epilayers were studied by transmission electron microscopy, high-resolution x-ray diffraction, and low-temperature photoluminescence measurements. We find clear evidence for the growth of cubic GaN layers almost free of hexagonal inclusions. The density of extended defects and the near band edge photoluminescence of the cubic GaN layers grown at substrate temperatures of 835 °C is comparable to that of high quality cubic GaN epilayers grown by molecular beam epitaxy on GaAs (001) substrates. © 2000 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
61.72.Nn Stacking faults and other planar or extended defects

Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography

R. R. Li, P. D. Dapkus, M. E. Thompson, W. G. Jeong, C. Harrison, P. M. Chaikin, R. A. Register, and D. H. Adamson

Appl. Phys. Lett. 76, 1689 (2000); http://dx.doi.org/10.1063/1.126137 (3 pages) | Cited 105 times

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GaAs has been selectively grown in a hexagonally ordered array of nanometer-scale holes with a density as high as ∼ 1011/cm2 by metalorganic chemical vapor deposition. This array of holes was created using block copolymer lithography, in which a thin layer of diblock copolymer was used as an etching mask to make dense holes in a 15-nm-thick SiNx film. These selectively grown nanoscale features are estimated to be 23 nm in diameter with narrow lateral size and height distributions as characterized by field-emission scanning electron microscopy and tapping mode atomic force microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots we report offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.07.-b Nanoscale materials and structures: fabrication and characterization
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A reduced complexity process for organic thin film transistors

Hagen Klauk, David J. Gundlach, Mathias Bonse, Chung-Chen Kuo, and Thomas N. Jackson

Appl. Phys. Lett. 76, 1692 (2000); http://dx.doi.org/10.1063/1.126138 (3 pages) | Cited 43 times

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A simplified device structure for depletion-mode organic thin film transistors is described in which the gate electrode and the source/drain contacts are prepared in the same process step, thus reducing the number of material depositions and photolithography steps. Based on the simplified device structure and using the small-molecule aromatic hydrocarbon pentacene as the active material, organic thin film transistors were fabricated on glass substrates with carrier mobility of 0.6 cm2/V s, on/off current ratio of 105, and subthreshold slope of 0.5 V/decade. © 2000 American Institute of Physics.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
85.40.Ls Metallization, contacts, interconnects; device isolation

p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy

L. Svob, C. Thiandoume, A. Lusson, M. Bouanani, Y. Marfaing, and O. Gorochov

Appl. Phys. Lett. 76, 1695 (2000); http://dx.doi.org/10.1063/1.126139 (3 pages) | Cited 18 times

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ZnS layers were grown by metalorganic vapor phase epitaxy on GaAs substrates using diethylzinc, ditertiarybutyl sulphide, and triallylamine as organometallic sources. After postgrowth rapid thermal annealing, the ZnS layers showed p-type conductivity with hole concentrations up to 1018 cm−3. Photoluminescence measurements gave additional indications of the presence of electrically active nitrogen acceptors. In separate experiments, lithium was diffused from a LiH solid source into ZnS layers grown without the nitrogen precursor. High-conductivity p-type material was directly obtained with no need of thermal anneal. © 2000 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
71.55.Gs II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors
73.61.Ga II-VI semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Influence of phase fluctuation in external environment on Coulomb blockade in an array system of single tunnel junctions/Ni nanowires

Junji Haruyama, Ken-ichiro Hijioka, Motohiro Tako, and Yuki Sato

Appl. Phys. Lett. 76, 1698 (2000); http://dx.doi.org/10.1063/1.126140 (3 pages) | Cited 2 times

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Correlation of Coulomb blockade (CB) with phase fluctuation caused by mutual Coulomb interaction is reported in an array system of single tunnel junctions directly connected to disordered Ni nanowires. At the voltages lower than CB voltage, temperature dependence of the normalized resistance is classified to the following two regimes by a phase transition temperature (Tc), (1) mutual Coulomb interaction regime (T>Tc) and (2) CB regime (T<Tc). It is found that this Tc is very sensitive to a diffusion coefficient (D) of the mutual Coulomb interaction, resulting in a linear Tc vs D1/2 relation. This relation is interpreted as a result of the competition between the charging energy of the CB and the phase fluctuation energy caused by the multiple Coulomb scattering in the Ni nanowire. It is also reconfirmed by the wire diameter dependence of Tc. © 2000 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling

Hole activation from GaAs:Zn nanoclusters for p-type conduction in ZnSe

I. Suemune, J. Hirose, and A. Ueta

Appl. Phys. Lett. 76, 1701 (2000); http://dx.doi.org/10.1063/1.126141 (3 pages) | Cited 1 time

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Growth of p-type ZnSe has been limited to nitrogen doping in molecular-beam epitaxy. As an alternative to nitrogen doping, GaAs cluster doping is proposed in this letter, where GaAs has small lattice mismatch of 0.28% to ZnSe and can potentially be heavily doped in p type. Hole activation to the valence band of the ZnSe layers could be observed by the reduction of the thickness of the GaAs layers in order to form nanoclusters. This was achieved with alternate supplies of triethylgallium and trisdimethylaminoarsenic, and the net acceptor concentration of ∼ 1017 cm−3 was observed. © 2000 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
73.61.Ga II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
71.55.Gs II-VI semiconductors
81.05.Dz II-VI semiconductors

Effects of charged self-assembled quantum dots on two-dimensional quantum transport

Qin Wang, N. Carlsson, P. Omling, L. Samuelson, W. Seifert, and H. Q. Xu

Appl. Phys. Lett. 76, 1704 (2000); http://dx.doi.org/10.1063/1.126142 (3 pages) | Cited 7 times

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The influence of a layer of InAs quantum dots on the transport properties of a nearby two-dimensional electron gas (2DEG) in an InGaAs/InP quantum well is investigated. The probability of the scattering between edge states is found to increase as the distance between the layer of the dots and the 2DEG decreases. It is shown that Coulomb scattering by electrons in the charged quantum dots play an important role in the scattering between edge states. An effect of the electrons in the dots is to mediate scattering between spin-split edge states. This is demonstrated by showing that the overshoot effect in the quantum Hall regime is only present when the dots are charged with electrons. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.43.-f Quantum Hall effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.70.Di Landau levels

Dislocation scattering in a two-dimensional electron gas

Debdeep Jena, Arthur C. Gossard, and Umesh K. Mishra

Appl. Phys. Lett. 76, 1707 (2000); http://dx.doi.org/10.1063/1.126143 (3 pages) | Cited 72 times

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A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies dislocation scattering as a mobility-limiting scattering mechanism in 2DEGs with high dislocation densities. The insensitivity of the 2DEG (as compared to bulk) to dislocation scattering is explained by the theory. © 2000 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices
81.05.Ea III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Magnetoresistance in n- and p-type Ag2Te: Mechanisms and applications

H. S. Schnyders, M.-L. Saboungi, and T. F. Rosenbaum

Appl. Phys. Lett. 76, 1710 (2000); http://dx.doi.org/10.1063/1.126144 (3 pages) | Cited 26 times

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We compare the large magnetoresistive response of slightly nonstoichiometric Ag2±δTe for a wide range of hole (p ⩽ 8×1017 cm−3) and electron (n ⩽ 4×1018 cm−3) carrier densities. In the p-type material alone, a characteristic peak in the resistivity ρ(T,H) is dramatically enhanced and moves to higher temperature with increasing magnetic field, resulting in a high field (H ∼ 5 T) magnetoresistance that is sizeable even at room temperature. By contrast, n-type specimens are geared for low-field (H<0.1 T) applications because of a striking linear field dependence of the magnetoresistance that appears to be restricted to the Ag-rich materials. © 2000 American Institute of Physics.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Jc Other crystalline inorganic semiconductors

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, and R. A. Weller

Appl. Phys. Lett. 76, 1713 (2000); http://dx.doi.org/10.1063/1.126167 (3 pages) | Cited 109 times

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Results of capacitance–voltage measurements are reported for metal–oxide–semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide–semiconductor interface. © 2000 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
81.05.Hd Other semiconductors
61.72.Cc Kinetics of defect formation and annealing
71.20.Nr Semiconductor compounds
73.20.At Surface states, band structure, electron density of states
81.65.Rv Passivation
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