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27 Mar 2000

Volume 76, Issue 13, pp. 1641-1784

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Low-temperature preparation and characterization of SrBi2Ta2O9 thin films on (100)-oriented LaNiO3 electrodes

G. D. Hu, I. H. Wilson, J. B. Xu, C. P. Li, and S. P. Wong

Appl. Phys. Lett. 76, 1758 (2000); http://dx.doi.org/10.1063/1.126158 (3 pages) | Cited 23 times

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SrBi2Ta2O9 (SBT) ferroelectric thin films were prepared by the metalorganic decomposition technique at annealing temperatures of 600 and 650 °C on Pt/Ti/SiO2/Si substrates coated by (100)-oriented LaNiO3 (LNO) metal oxide thin films, which were fabricated by the sol–gel technique combined with a layer-by-layer annealing method at 600 °C. A (200)-predominant SBT thin film can be formed on LaNiO3(100)/Pt/Ti/SiO2/Si substrate at 600 °C. The effect of the LNO oxide electrode on the dielectric and ferroelectric properties of SBT thin film annealed at 600 °C was studied. Although the remanent polarization of the (200)-predominant SBT thin film is not as large as expected, the film can be uniformly polarized and imaged using an atomic force microscope in the piezoelectric mode. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
61.72.Cc Kinetics of defect formation and annealing
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena

Na0.5K0.5NbO3/SiO2/Si thin film varactor

Choong-Rae Cho, Jung-Hyuk Koh, Alex Grishin, Saeed Abadei, and Spartak Gevorgian

Appl. Phys. Lett. 76, 1761 (2000); http://dx.doi.org/10.1063/1.126159 (3 pages) | Cited 34 times

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Perfectly c-axis oriented micrometer thick Na0.5K0.5NbO3(NKN) films have been prepared on a thermally grown ultrathin SiO2 template layer onto a Si(001) wafer by the pulsed laser deposition technique. A x-ray diffraction θ–2θ scan reveals multiple-cell structuring of single phase NKN film along the polar axis, while films grown onto amorphous ceramic (Corning) glass show a mixture of slightly c-axis oriented NKN and pyrochlore phases. This implies a small amount of SiO2 crystallites distributed in an amorphous matrix inherit Si(001) orientation and promotes highly oriented NKN film growth. NKN film dielectric permittivity ε′ was found to vary from 114.0 to 107.2 in the frequency range 1 kHz–1 MHz, while the resistivity was on the order of 2.6×1010 Ω cm @ 20 kV/cm. The planar interdigital variable reactance device (varactor) based on the NKN/SiO2/Si thin film structure possesses a dissipation factor of 0.8% at 1 MHz and zero bias, electrical tunability of 3.1%, and nA order leakage current at 20 V bias at room temperature. © 2000 American Institute of Physics.
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84.32.Tt Capacitors
81.15.Fg Pulsed laser ablation deposition
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