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27 Mar 2000

Volume 76, Issue 13, pp. 1641-1784

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Electro-optic effect in Ba1−xPbxTiO3 films

V. Fuflyigin, F. Wang, H. Jiang, J. Zhao, and P. Norris

Appl. Phys. Lett. 76, 1641 (2000); http://dx.doi.org/10.1063/1.126121 (3 pages) | Cited 3 times

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High quality Ba1−xPbxTiO3 (x = 0–0.25) films were grown on R-Al2O3 in a wide thickness range of 0.5–3 μm. Significant improvement of the films’ crystallinity and optical quality was observed in the presence of lead oxide for the films prepared at 650–700 °C. Strong texture of (110) type was observed in these films. The material is transparent at 350–2000 nm, indicating the possibility of its application in light controlling devices at wavelengths used in optical communication: 1300 and 1500 nm. Maximum field induced relative phase shift of 0.22 rad was measured in the film with composition of Ba0.9Pb0.1TiO3 under a field strength of 3×106 V/cm. © 2000 American Institute of Physics.
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78.20.Jq Electro-optical effects
78.66.Nk Insulators
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology

Length scales of charge transport in organic photorefractive materials

A. Leopold, M. Grasruck, U. Hofmann, M. A. Kol’chenko, and S. J. Zilker

Appl. Phys. Lett. 76, 1644 (2000); http://dx.doi.org/10.1063/1.126122 (3 pages) | Cited 2 times

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The drift length of charge carriers has a significant influence on the dynamics of the space-charge field in organic photorefractive materials. This letter introduces a relatively simple method for the determination of the drift length, which takes into account that the charge carrier mobility depends on the sample thickness. By combining results of time-of-flight and holographic time-of-flight experiments using the stochastic transport model of Scher and Montroll, the effective drift length can be determined as 2.4 μm in the investigated photorefractive glass. © 2000 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
72.20.Fr Low-field transport and mobility; piezoresistance
42.40.My Applications
72.80.Le Polymers; organic compounds (including organic semiconductors)
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers

W. W. Chow, H. Amano, and I. Akasaki

Appl. Phys. Lett. 76, 1647 (2000); http://dx.doi.org/10.1063/1.126123 (3 pages) | Cited 18 times

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Filamentation and, consequently, output beam quality in InGaN quantum-well lasers are found to be strong functions of quantum-well width because of the interplay of quantum-confined Stark effect and many-body interactions. For an In0.2Ga0.8N/GaN gain medium, the antiguiding factor in a thick 4 nm quantum well is considerably smaller than that for a narrow 2 nm one. As a result, lasers with the thicker quantum well maintain fundamental-mode operation with wider stripe widths and at significantly higher excitation levels. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.20.Jq Electro-optical effects

Improvement of output coupling efficiency of organic light-emitting diodes by backside substrate modification

C. F. Madigan, M.-H. Lu, and J. C. Sturm

Appl. Phys. Lett. 76, 1650 (2000); http://dx.doi.org/10.1063/1.126124 (3 pages) | Cited 114 times

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The emission intensity of an organic light-emitting diode at normal viewing angle and the total external emission efficiency have been increased by factors of 9.6 and 3.0, respectively, by applying spherically shaped patterns to the back of the device substrate. The technique captures light previously lost to waveguiding in the substrate and, with proper choice of substrate, light previously lost to waveguiding in the organic/anode layers. A method of applying the technique using laminated films and an optical model for evaluating coupling efficiency are also presented. © 2000 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
42.65.Wi Nonlinear waveguides
42.82.Et Waveguides, couplers, and arrays

Nonvolatile two-color holographic recording in Tb-doped LiNbO3

Myeongkyu Lee, Shunji Takekawa, Yasunori Furukawa, Kenji Kitamura, Hideki Hatano, and Satoru Tanaka

Appl. Phys. Lett. 76, 1653 (2000); http://dx.doi.org/10.1063/1.126125 (3 pages) | Cited 16 times

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We have found that Tb-doped near-stoichiometric LiNbO3 crystals have three different types of energy levels: ultraviolet (UV) absorption centers just above the valence band, shallow electron traps slightly below the conduction band, and deep traps located about 1.9 eV (λ ≈ 650 nm) below it. Using this shallow trap as an intermediate energy state, two-color holographic recording has been carried out at λ = 852 nm with a UV gating light at 313 nm. A few % of diffraction efficiency was achieved, and the measured two-color sensitivity was 0.01–0.02 cm/J. No reduction of diffraction efficiency was observed during 4 h continuous readout, and the bit-error-rate of constructed digital hologram was less than 10−5. © 2000 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.40.Ht Hologram recording and readout methods
42.70.Ln Holographic recording materials; optical storage media
78.40.Ha Other nonmetallic inorganics
71.55.Ht Other nonmetals

Eu3+ emission in an anisotropic photonic band gap environment

S. G. Romanov, A. V. Fokin, and R. M. De La Rue

Appl. Phys. Lett. 76, 1656 (2000); http://dx.doi.org/10.1063/1.126126 (3 pages) | Cited 34 times

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Eu3+ ions have been incorporated into the silica skeleton of synthetic opal. The effect of the anisotropic photonic band gap structure upon the emission characteristics has been studied in the case where the emission bandwidth is narrower than the stop-band. Either suppression or enhancement of the spontaneous emission at the wavelength of the radiative transition has been observed, depending on the relative position of the emission band and the stop-band. © 2000 American Institute of Physics.
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42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
71.55.Ht Other nonmetals
78.55.Hx Other solid inorganic materials

Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

D. Zhou and L. J. Mawst

Appl. Phys. Lett. 76, 1659 (2000); http://dx.doi.org/10.1063/1.126127 (3 pages) | Cited 18 times

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A two-step metalorganic chemical vapor deposition growth process is used to fabricate antiguided vertical-cavity surface-emitting lasers (VCSELs) incorporating a simplified-antiresonant reflecting optical waveguide (S-ARROW) design. Preliminary results show single-mode cw operation up to 1 mW output power from a 12 μm-diam (λ = 930 nm) S-ARROW VCSEL with a large lateral index step (Δn = 0.1). Modal discrimination in the S-ARROW-VCSEL is calculated using a fiber-mode approximation and device optimization for high-single-mode powers is discussed. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.79.Gn Optical waveguides and couplers
81.05.Dz II-VI semiconductors

A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser

Y.-K. Song, H. Zhou, M. Diagne, A. V. Nurmikko, R. P. Schneider, C. P. Kuo, M. R. Krames, R. S. Kern, C. Carter-Coman, and F. A. Kish

Appl. Phys. Lett. 76, 1662 (2000); http://dx.doi.org/10.1063/1.126128 (3 pages) | Cited 50 times

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We have fabricated and studied a violet (λ = 403 nm) vertical cavity surface emitting laser structure, composed of an InGaN multiple quantum well active medium and a pair of high reflectivity dielectric mirrors. Lasing under high repetition rate (76 MHz) pulsed optical pumping has been achieved at temperatures up to T = 258 K at average pump power of approximately 30 mW. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Surface plasmon resonance phase imaging

Ariel G. Notcovich, V. Zhuk, and S. G. Lipson

Appl. Phys. Lett. 76, 1665 (2000); http://dx.doi.org/10.1063/1.126129 (3 pages) | Cited 27 times

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We present a promising optical system and technique for detection, imaging, and visualization of minimal changes, of the order of 10−6 in refractive index, in the near field. The system is based on phase imaging of excited surface plasmons in a conducting layer in contact with a sample. This technique is shown here to be sensitive enough to image the flow of helium and argon gas in a nitrogen atmosphere. Its application to biological and chemical research is suggested. © 2000 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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