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10 Apr 2000

Volume 76, Issue 15, pp. 1969-2136

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Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice

Leah Bergman, Mitra Dutta, M. A. Stroscio, S. M. Komirenko, Robert J. Nemanich, C. J. Eiting, D. J. H. Lambert, H. K. Kwon, and R. D. Dupuis

Appl. Phys. Lett. 76, 1969 (2000); http://dx.doi.org/10.1063/1.126225 (3 pages) | Cited 17 times

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A detailed study of photoluminescence (PL) of GaN(1 nm)/Al0.2Ga0.8N(3.3 nm) twenty periods superlattice grown via metal-organic chemical vapor deposition is presented. The dependence of the PL emission energy, linewidth, and intensity on temperature, in the low temperature regime, is consistent with recombination mechanisms involving bandtail states attributed to a small degree of interfacial disorder. The activation energy of the nonradiative centers in our superlattice agrees well with the value we derive for the width of the tail-state distribution. Moreover, we find that the average phonon energy of the phonons that control the interband PL energy at high temperatures is larger for the superlattice than for a high-quality GaN film. This observation is consistent with model calculations predicting the phonon mode properties of GaN–AlN-based wurtzite heterostructures. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
63.20.K- Phonon interactions
71.35.Gg Exciton-mediated interactions
63.20.kk Phonon interactions with other quasiparticles

Polymeric electro-optic modulator based on 1×2 Y-fed directional coupler

Dechang An, Zan Shi, Lin Sun, John M. Taboada, Qingjun Zhou, Xuejun Lu, Ray T. Chen, Suning Tang, Hua Zhang, William H. Steier, Albert Ren, and Larry R. Dalton

Appl. Phys. Lett. 76, 1972 (2000); http://dx.doi.org/10.1063/1.126226 (3 pages) | Cited 17 times

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We have demonstrated a polymeric electro-optic modulator based on a 1×2 Y-fed directional waveguide coupler. The symmetric geometry of the 1×2 Y-fed directional coupler provided the modulator unique characteristics of intrinsic 3 dB operating point and two complementary output ends. A low switching voltage of 3.6 V and a high extinction ratio of 26 dB were obtained with the modulator operating at a wavelength of 1.34 μm. The modulator was fabricated with a novel electro-optic polymer that was synthesized from polyurethane cross-linking with a chromophore. © 2000 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.82.Et Waveguides, couplers, and arrays
42.70.Jk Polymers and organics
42.82.Bq Design and performance testing of integrated-optical systems

Q-switched operation of a coupled-resonator vertical-cavity laser diode

A. J. Fischer, W. W. Chow, K. D. Choquette, A. A. Allerman, and K. M. Geib

Appl. Phys. Lett. 76, 1975 (2000); http://dx.doi.org/10.1063/1.126227 (3 pages) | Cited 8 times

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We report Q-switched operation from an electrically injected monolithic coupled-resonator structure which consists of an active cavity with InGaAs quantum wells optically coupled to a passive cavity. The passive cavity contains a bulk GaAs region which is reverse biased to provide variable absorption at the lasing wavelength of 990 nm. Cavity coupling is utilized to effect large changes in output intensity with only very small changes in passive cavity absorption. The device is shown to produce pulses as short as 150 ps at repetition rates as high as 4 GHz. A rate equation approach is used to model the Q-switched operation yielding good agreement between the experimental and theoretical pulse shape. Small-signal frequency response measurements also show a transition from a slower (∼300 MHz) forward-biased modulation regime to a faster (∼2 GHz) modulation regime under reverse-bias operation. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking

Blue cooperative upconversion in Yb3+-doped multicomponent sol-gel-processed silica glass for three-dimensional display

G. S. Maciel, A. Biswas, R. Kapoor, and P. N. Prasad

Appl. Phys. Lett. 76, 1978 (2000); http://dx.doi.org/10.1063/1.126228 (3 pages) | Cited 66 times

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We propose using blue cooperative upconversion of ytterbium (Yb3+) ions produced by a one-color one-beam pumping scheme for a three-dimensional fluorescence display. The results are presented using a diode laser as a pump source emitting at 973 nm, and the sample used was a multicomponent sol-gel-processed silica glass (1 mol. % of Yb3+). The maximum absolute blue power emitted was ∼1 μW for an excitation power of ∼900 mW. © 2000 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
85.60.Pg Display systems

Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment

Seoung-Hwan Park and Shun-Lien Chuang

Appl. Phys. Lett. 76, 1981 (2000); http://dx.doi.org/10.1063/1.126229 (3 pages) | Cited 64 times

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Electronic and optical properties of wurtzite GaN/AlGaN quantum well (QW) structures with the spontaneous (SP) and piezoelectric (PZ) polarizations are investigated. Although the PZ field in the well is zero where there is no strain if the QW structures are grown on a thick GaN layer, there may still exist a strong field in the well due to the difference between the SP polarizations in the well and barrier regions. It is shown that the transition energies have significant dependence on both the well and the barrier widths and the many-body optical gain is reduced largely due to the SP polarization. In particular, in the case of a QW structure with a large well width, the reduction of the optical gain is dominant due to larger spatial separation between the electron and hole wave functions. These results suggest that a QW structure with a thin well width below 30 Å is desirable for QW lasers. We show that the theoretical transition energies agree very well with the experimental results for several Al compositions and barrier widths. The estimated SP polarization constant for AlN is about −0.040 C/m2, which is smaller than the value (−0.081 C/m2) predicted by previous theory. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Near-infrared laser pumped intersubband THz laser gain in InGaAs–AlAsSb–InP quantum wells

Ansheng Liu and C. Z. Ning

Appl. Phys. Lett. 76, 1984 (2000); http://dx.doi.org/10.1063/1.126230 (3 pages) | Cited 11 times

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We investigate the possibility of using InGaAs–AlAsSb–InP coupled quantum wells to generate THz radiation by means of intersubband optical pumping. We show that large conduction band offsets of these quantum wells make it possible to use conventional near-infrared diode lasers around 1.55 μm as pump sources. Taking into account the pump–probe coherent interaction and the optical nonlinearity for the pump field, we calculate the THz gain of the quantum well structure. We show that resonant Raman scattering enhances the THz gain at low and moderate optical pumping levels. When the pump intensity is strong, the THz gain is reduced by pump-induced population redistribution and pump–probe coherent interactions. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Single-mode waveguide propagation and reshaping of sub-ps terahertz pulses in sapphire fibers

S. P. Jamison, R. W. McGowan, and D. Grischkowsky

Appl. Phys. Lett. 76, 1987 (2000); http://dx.doi.org/10.1063/1.126231 (3 pages) | Cited 68 times

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Waveguide propagation of sub-ps terahertz pulses in single-crystal sapphire fibers is reported. An incident THz pulse of approximately 0.6 ps duration undergoes considerable reshaping due to the absorptive and dispersive waveguide propagation, resulting in transmitted chirped pulse durations of 10–30 ps. Good agreement between theory and experiment is obtained by analyzing the propagation in terms of the single HE11 waveguide mode. The dominance of the single HE11 mode, despite the fiber dimensions allowing for multimode propagation, is attributed to the free-space to waveguide coupling. © 2000 American Institute of Physics.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Significant photoinduced refractive index change observed in porous silicon Fabry–Pérot resonators

Morio Takahashi, Yuichi Toriumi, Takahiro Matsumoto, Yasuaki Masumoto, and Nobuyoshi Koshida

Appl. Phys. Lett. 76, 1990 (2000); http://dx.doi.org/10.1063/1.126279 (3 pages) | Cited 8 times

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It is shown that a porous silicon Fabry–Pérot resonator device exhibits a significant nonlinear optical transmission behavior at wavelengths in the near-infrared region. The input–output (transmission–incident power) response curve shows superlinear or sublinear behavior dependent on excitation wavelengths around the resonant position. These characteristics are interpreted as a result of nonlinear refractive index change, including by enhanced optical power in the Fabry–Pérot cavity configuration and carrier accumulation in silicon nanocrystallites. The result leads to further progress of nanocrystalline silicon into functional photonic device applications. © 2000 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Jq Electro-optical effects

Manipulation of colloidal gold nanoparticles in the evanescent field of a channel waveguide

L. N. Ng, M. N. Zervas, J. S. Wilkinson, and B. J. Luff

Appl. Phys. Lett. 76, 1993 (2000); http://dx.doi.org/10.1063/1.126232 (3 pages) | Cited 15 times

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Colloidal gold spheres of radius 10 nm are reported to move forward in water, under the influence of radiation pressure forces, due to the evanescent field at the surface of an optical channel waveguide. The velocity is linearly dependent upon the optical power in the waveguide, acquiring a maximum velocity of 4 μm/s for modal power of 500 mW in the TM polarization at a wavelength of λ = 1.047 μm. © 2000 American Institute of Physics.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions
61.82.Rx Nanocrystalline materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
42.79.Gn Optical waveguides and couplers
82.70.Dd Colloids
61.46.-w Structure of nanoscale materials
61.80.-x Physical radiation effects, radiation damage

Single axial-mode selection in a far-infrared p-Ge laser

A. V. Muravjov, S. H. Withers, H. Weidner, R. C. Strijbos, S. G. Pavlov, V. N. Shastin, and R. E. Peale

Appl. Phys. Lett. 76, 1996 (2000); http://dx.doi.org/10.1063/1.126233 (3 pages) | Cited 10 times

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Single axial-mode operation of the pulsed far-infrared p-Ge laser with an intracavity Fabry–Perot type frequency selector has been observed by means of Fourier-transform spectroscopy. A spectral resolution better than 1 GHz has been achieved on an ordinary continuous-scan spectrometer using the event-locked technique for pulsed emission sources. A laser active-cavity finesse of at least unity has been directly confirmed from the measured emission spectral width. Analysis of the envelope of the corresponding interferogram suggests that the finesse exceeds 10. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
07.60.Ly Interferometers
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.60.Fc Modulation, tuning, and mode locking

Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

Jung H. Shin, Se-young Seo, Sangsig Kim, and S. G. Bishop

Appl. Phys. Lett. 76, 1999 (2000); http://dx.doi.org/10.1063/1.126234 (3 pages) | Cited 22 times

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The 1.54 μm Er3+ photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er3+ luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins. © 2000 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals
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Deposition rate in modulated radio-frequency silane plasmas

A. C. W. Biebericher, J. Bezemer, W. F. van der Weg, and W. J. Goedheer

Appl. Phys. Lett. 76, 2002 (2000); http://dx.doi.org/10.1063/1.126235 (3 pages) | Cited 15 times

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Plasma-enhanced chemical-vapor deposition of amorphous silicon by a square-wave amplitude-modulated radio-frequency excitation has been studied by optical emission spectroscopy and plasma modeling. By the modulation, the deposition rate is increased or reduced, depending on the plasma parameters. The increase in the deposition rate in powder-free (α-regime) plasmas is explained by the behavior of the electrons. High-energy electrons cause a large production of radicals at the onset of the plasma, as evidenced by an overshoot in optical emission. This is confirmed by a one-dimensional fluid model. An optimum in the deposition rate at a modulation frequency of about 100 kHz is determined by the decay time of the electron density. © 2000 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.25.-b Plasma properties
52.65.-y Plasma simulation
68.55.-a Thin film structure and morphology
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In situ growth study of NiMnSb films on MgO(001) and Si(001)

J.-P. Schlomka, M. Tolan, and W. Press

Appl. Phys. Lett. 76, 2005 (2000); http://dx.doi.org/10.1063/1.126236 (3 pages) | Cited 14 times

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The sputter deposition of thin magnetic NiMnSb films on MgO(001) and Si(001) is investigated by in situ x-ray scattering. It is shown that the roughness of the layers as a function of the film thickness increases according to power laws with unusually large growth exponents. The optimum growth conditions are found on the substrate MgO(001) at temperatures of 250 °C during the deposition. © 2000 American Institute of Physics.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Cc Other ferromagnetic metals and alloys
78.70.Ck X-ray scattering
68.35.B- Structure of clean surfaces (and surface reconstruction)
75.47.De Giant magnetoresistance

Mechanical property measurement of thin polymeric-low dielectric-constant films using bulge testing method

D. W. Zheng, Y. H. Xu, Y. P. Tsai, K. N. Tu, P. Patterson, Bin Zhao, Q.-Z. Liu, and Maureen Brongo

Appl. Phys. Lett. 76, 2008 (2000); http://dx.doi.org/10.1063/1.126237 (3 pages) | Cited 18 times

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We report here the bulge testing results of both dense and porous poly-arylethers (PAE) polymeric low dielectric constant thin films. These films were prepared on a 4.7-μm-thick Si membrane window of 1600×1600 μm2. The Si membrane was subsequently removed in a pulsed XeF2 etcher and the remaining thin film became the bulge test sample. The biaxial moduli of both the dense and 40% porosity low-k PAE thin films were measured to be 6.40±0.35 and 3.53±0.70 GPa, respectively. These biaxial moduli, when combined with the thermal stress data of these films, enabled us to estimate the thermal expansion coefficients in the range of 26.8–32.6 and 56.1–72.5 ppm/°C for the dense and porous PAE films, respectively. © 2000 American Institute of Physics.
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81.70.Bt Mechanical testing, impact tests, static and dynamic loads
77.55.-g Dielectric thin films
77.84.Lf Composite materials
68.60.Bs Mechanical and acoustical properties
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
85.40.Ls Metallization, contacts, interconnects; device isolation
65.40.De Thermal expansion; thermomechanical effects

Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties

Y. Li, G. W. Meng, L. D. Zhang, and F. Phillipp

Appl. Phys. Lett. 76, 2011 (2000); http://dx.doi.org/10.1063/1.126238 (3 pages) | Cited 428 times

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Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to 90 nm were uniformly assembled into the hexagonally ordered nanochannels of the AAM. Photoluminescence (PL) measurements show a blue PL band in the wavelength range of 450–650 nm caused by the singly ionized oxygen vacancy in ZnO nanowires. © 2000 American Institute of Physics.
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78.66.Hf II-VI semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Et II-VI semiconductors
81.05.Dz II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.65.Mq Oxidation
61.72.J- Point defects and defect clusters
81.15.Pq Electrodeposition, electroplating
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Synchrotron-radiation-induced, selective-area deposition of gold on polyimide from solution

Qing Ma, Nicolaie Moldovan, Derrick C. Mancini, and Richard A. Rosenberg

Appl. Phys. Lett. 76, 2014 (2000); http://dx.doi.org/10.1063/1.126239 (3 pages) | Cited 15 times

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Room-temperature photoinduced, selective-area deposition of gold films on polyimide from gold salt solution using synchrotron radiation x rays is described. A film growth rate as high as 40 nm/min is obtained. For thickness <50 nm, the films consist of nanograins with a grain size of about 200 nm. For thicker films, gold deposit forms a ramified morphology on top of the nanograin film. The change in morphology is discussed in terms of the change in the yield of the photoelectrons generated by x rays as a function of growth. © 2000 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
61.80.Cb X-ray effects
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Quantitative determination of the order parameter in epitaxial layers of ZnSnP2

S. Francoeur, G. A. Seryogin, S. A. Nikishin, and H. Temkin

Appl. Phys. Lett. 76, 2017 (2000); http://dx.doi.org/10.1063/1.126240 (3 pages) | Cited 3 times

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X-ray diffraction is applied to determine the degree of order in partially ordered epitaxial layers of ZnSnP2 grown on GaAs. The Bragg–Williams order parameter, used as a scaling coefficient for the structure factor of superstructure reflections, is extracted from the comparison of measured and calculated relative intensities of a set of carefully chosen reflections. The calculated diffraction patterns are obtained from the dynamical theory of x-ray diffraction. The effect of antiphase domains on the width of superstructure reflections is discussed. Order parameters up to 30% were measured. © 2000 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Experimental observation of anomalous absorption of bulk shear acoustic waves by a thin layer of viscous fluid

Mark J. Lwin, Dmitri K. Gramotnev, Melissa L. Mather, John M. Bell, and Will Scott

Appl. Phys. Lett. 76, 2020 (2000); http://dx.doi.org/10.1063/1.126241 (3 pages)

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This letter presents the results of an experimental observation and investigation of the recently predicted anomalous absorption of bulk shear acoustic waves polarized normally to the plane of incidence by an ultrathin layer of viscous fluid between two elastic media. Strong increase of the absorptivity of the incident wave by the fluid layer has been observed at layer thicknesses that are much smaller than the wavelength and wave penetration depth into the fluid. A good agreement between the experimental results and the theoretical predictions has been achieved. © 2000 American Institute of Physics.
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43.20.Hq Velocity and attenuation of acoustic waves
68.15.+e Liquid thin films
62.60.+v Acoustical properties of liquids

Refined model for spectroscopic ellipsometry analysis of SixGe1−x/Si strained heterostructures

F. Ferrieu

Appl. Phys. Lett. 76, 2023 (2000); http://dx.doi.org/10.1063/1.126242 (3 pages)

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A simple model based on the optical stress birefringence induced by the lattice mismatch in the epitaxy of a SixGa1−x layer on Si is discussed. With this model, spectroscopic ellipsometry provides not only layer thickness and alloy composition, but also control of the coherently strained-to-unstrained material ratio. © 2000 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.66.Li Other semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
81.05.Cy Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.20.Fm Birefringence
81.05.Hd Other semiconductors

Change in electrical resistivity associated with the glass transition in a continuously cooled Pd40Cu30Ni10P20 melt

O. Haruyama, H. Kimura, A. Inoue, and N. Nishiyama

Appl. Phys. Lett. 76, 2026 (2000); http://dx.doi.org/10.1063/1.126243 (3 pages) | Cited 15 times

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We report a reversible change in electrical resistivity accompanied with the glass transition (glass transition temperature Tg = 570 K) in a Pd40Cu30Ni10P20 bulk glass. The bulk glass with a diameter of about 5 mm and length of 30 mm was produced at a maximum cooling rate of 1.2 K/s. This bulk glass showed a negative temperature coefficient of resistivity −0.81×10−4 K−1, at room temperature, −4.17×10−4 K−1 in the supercooled liquid region, and −2.75×10−4 K−1 in the liquid state. The undercooled liquid alloy beyond eutectic temperature Tm = 804 K did not show the onset of crystallization until room temperature. The behavior of resistivity around Tg was in accordance with the heating to and cooling from the melt. This suggests that the amorphous structure might vary reversibly according to the glass transition in the present glass. © 2000 American Institute of Physics.
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72.15.Cz Electrical and thermal conduction in amorphous and liquid metals and alloys
61.25.Mv Liquid metals and alloys
61.43.Fs Glasses
81.05.Kf Glasses (including metallic glasses)
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
64.70.D- Solid-liquid transitions

Epitaxial relationship in the AlN/Si(001) heterosystem

V. Lebedev, J. Jinschek, U. Kaiser, B. Schröter, W. Richter, and J. Kräußlich

Appl. Phys. Lett. 76, 2029 (2000); http://dx.doi.org/10.1063/1.126244 (3 pages) | Cited 21 times

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The epitaxial growth of crystalline wurtzite AlN thin films on (001) Si substrates by plasma-assisted molecular-beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. Cross-sectional transmission electron microscopy and x-ray diffraction investigations revealed a two-domain film structure (AlN1 and AlN2) with a 30° rotation between neighboring domain orientations and an epitaxial orientation relationship of [0001]AlN∥[001]Si and 〈01math0〉AlN1∥〈math110〉AlN2∥[110]Si. A model for the nucleation and growth mechanism of 2H–AlN layers on Si(001) is proposed. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Effects of energy back transfer on the luminescence of Yb and Er ions in YAG

J. T. Vega-Durán, O. Barbosa-García, L. A. Diáz-Torres, M. A. Meneses-Nava, and D. S. Sumida

Appl. Phys. Lett. 76, 2032 (2000); http://dx.doi.org/10.1063/1.126245 (3 pages) | Cited 11 times

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The back-energy-transfer process from acceptors to donors is included to predict and explain the nonradiative energy-transfer processes among Yb–Er ions in a YAG matrix. This process is in addition to the direct Yb-to-Er energy transfer and the migration of energy among Yb ions. The two measured Yb transients are well fitted by the corresponding solution of the master equations that give the dynamics of the energy-transfer processes. © 2000 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals

Optical properties of InAs self-organized quantum dots in n–i–p–i GaAs superlattices

J. Z. Wang, Z. M. Wang, Z. G. Wang, Z. Yang, and S. L. Feng

Appl. Phys. Lett. 76, 2035 (2000); http://dx.doi.org/10.1063/1.126246 (3 pages) | Cited 1 time

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The optical properties of InAs quantum dots in n–i–p–i GaAs superlattices are investigated by photoluminescence (PL) characterization. We have observed an anomalously large blueshift of the PL peak and increase of the PL linewidth with increasing excitation intensity, much smaller PL intensity decrease, and faster PL peak redshift with increasing temperature as compared to conventional InAs quantum dots embedded in intrinsic GaAs barriers. The observed phenomena can all be attributed to the filling effects of the spatially separated photogenerated carriers. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field

R. McLaughlin, A. Corchia, M. B. Johnston, Q. Chen, C. M. Ciesla, D. D. Arnone, G. A. C. Jones, E. H. Linfield, A. G. Davies, and M. Pepper

Appl. Phys. Lett. 76, 2038 (2000); http://dx.doi.org/10.1063/1.126247 (3 pages) | Cited 33 times

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We demonstrate enhancement of terahertz (THz) emission from indium arsenide at 170 K in magnetic fields (B) up to 8 T. An order of magnitude increase in visible to terahertz conversion efficiency was observed, with no suggestion of saturation of the TE polarization at higher magnetic fields. Free-space electro-optic sampling measurements confirmed the coherent nature of this radiation over the field range investigated, and gave an insight into the carrier motion subsequent to photoexcitation, which may be responsible for the observed THz power enhancement. © 2000 American Institute of Physics.
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78.20.Ls Magneto-optical effects
78.55.Cr III-V semiconductors
78.20.Jq Electro-optical effects

Perovskite rare-earth nickelates in the thin-film epitaxial state

M. A. Novojilov, O. Yu. Gorbenko, I. E. Graboy, A. R. Kaul, H. W. Zandbergen, N. A. Babushkina, and L. M. Belova

Appl. Phys. Lett. 76, 2041 (2000); http://dx.doi.org/10.1063/1.126248 (3 pages) | Cited 31 times

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We have succeeded in the preparation of thin films of rare-earth nickelates RNiO3 (R=Pr, Nd, Sm, and Gd) under reduced oxygen pressure <0.02 bar by metalorganic chemical-vapor deposition owing to their epitaxial stabilization on perovskite substrates. The film–substrate lattice mismatch is critical for the epitaxial stabilization of RNiO3 phases. Increase of the lattice mismatch or film thickness results in the deposition of rare-earth oxides and NiO instead of RNiO3. The epitaxial films of nickelates were strained and consisted of 90° domains with the orthorhombic Pnma structure. The transport properties of the strained films on LaAlO3 were similar to those of the bulk material of the same composition under applied pressure of 9 kbar but they were different from the properties of the bulk material under ambient pressure. The result implies that transport properties of RNiO3 films with sharp metal-to-insulator transition can be effectively tuned by the control of the lattice strain. © 2000 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
73.61.At Metal and metallic alloys
71.30.+h Metal-insulator transitions and other electronic transitions
61.66.Fn Inorganic compounds
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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