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17 Apr 2000

Volume 76, Issue 16, pp. 2149-2312

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An integrated thin-film thermo-optic waveguide beam deflector

Suning Tang, Bulang Li, Xinghua Han, John M. Taboada, Chiou-Hung Jang, Jin-Ha Kim, Lin Sun, and Ray T. Chen

Appl. Phys. Lett. 76, 2289 (2000); http://dx.doi.org/10.1063/1.126323 (3 pages) | Cited 5 times

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We have demonstrated the operation of a thin-film thermo-optical beam deflector in a three-layer optical planar waveguide. The fabricated waveguide beam deflector consists of a thin-film SiO2 bottom cladding layer, a thin-film polymer top cladding layer, and alternatively positioned thin-film polymer and silica microprisms as the guiding layer. The beam deflection is achieved through the thermo-optic effect that results in opposed index changes in polymer and silica with respect to temperature changes. The measured deflection sensitivity is 0.06°/°C, for the fabricated device with a 7.0 mm interaction length at the wavelength of 632.8 nm. © 2000 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.79.Fm Reflectors, beam splitters, and deflectors
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.79.Gn Optical waveguides and couplers

Energy modulation of nonrelativistic electrons with a CO2 laser using a metal microslit

Jongsuck Bae, Ryo Ishikawa, Sumio Okuyama, Takashi Miyajima, Taiji Akizuki, Tatsuya Okamoto, and Koji Mizuno

Appl. Phys. Lett. 76, 2292 (2000); http://dx.doi.org/10.1063/1.126324 (3 pages) | Cited 1 time

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A metal microslit has been used as an interaction circuit between a CO2 laser beam and nonrelativistic free electrons. Evanescent waves which are induced on the slit by illumination of the laser light modulate the energy of electrons passing close to the surface of the slit. The electron-energy change of more than ±5 eV for the 80 keV electron beam has been observed using the 7 kW laser beam at the wavelength of 10.6 μm. © 2000 American Institute of Physics.
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41.75.Fr Electron and positron beams
42.60.-v Laser optical systems: design and operation

Thermally switched superconducting weak-link transistor with current gain

S.-B. Lee, D. G. Hasko, and H. Ahmed

Appl. Phys. Lett. 76, 2295 (2000); http://dx.doi.org/10.1063/1.126325 (3 pages) | Cited 7 times

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We report on a method of controling the critical current in a superconducting weak-link device. A superconducting weak-link transistor with an integrated, but electrically isolated, heater has been fabricated. The heater raises the temperature of the weak link above the bath temperature thus reducing the critical current required to give an output voltage. A maximum current gain (ratio of critical current change to applied heater current change) of 10.5 was achieved. © 2000 American Institute of Physics.
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85.25.Cp Josephson devices
74.25.Sv Critical currents

Superstable neutral electron traps in nonplanar thermal oxides on monocrystalline silicon

Tsuyoshi Ono, Mitiko Miura-Mattausch, Hermann Baumgärtner, and Hans Jürgen Mattausch

Appl. Phys. Lett. 76, 2298 (2000); http://dx.doi.org/10.1063/1.126333 (3 pages)

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The existence of superstable neutral electron traps is reported for thermal oxides on nonplanar monocrystalline silicon. These traps are located at the nonplanar corners of the oxide and have measured thermal detrapping energies up to 3.3 eV, nearly an order of magnitude larger than previously observed for planar oxides on monocrystalline silicon. The most likely physical reason for the extremely high stability is relaxation of the strain stress at the corner caused by the trapping of electrons. © 2000 American Institute of Physics.
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71.55.Ht Other nonmetals
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.05.Cy Elemental semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.35.Gy Mechanical properties; surface strains

Duplexer using microwave photonic band gap structure

Sang Soon Oh, Chul-Sik Kee, Jae-Eun Kim, Hae Yong Park, Tae Il Kim, Ikmo Park, and H. Lim

Appl. Phys. Lett. 76, 2301 (2000); http://dx.doi.org/10.1063/1.126326 (3 pages) | Cited 13 times

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We propose a frequency selective duplexer using microwave photonic band gap (PBG) structures. It uses two different PBGs to control the propagation of electromagnetic waves in the microwave region. In this structure, an additional narrow reflection band appears in the transmission spectrum when the PBG structure is not properly located relative to the T junction. By considering multiple reflections, it is proved that this additional reflection band in each PBG structure results from the interference between the input wave and the reflected wave from the other PBG structure. An effective way to prevent this interference effect is also discussed. © 2000 American Institute of Physics.
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84.40.Az Waveguides, transmission lines, striplines
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.70.Qs Photonic bandgap materials
42.50.-p Quantum optics
84.40.Ba Antennas: theory, components and accessories

Scanning SQUID microscopy of integrated circuits

S. Chatraphorn, E. F. Fleet, F. C. Wellstood, L. A. Knauss, and T. M. Eiles

Appl. Phys. Lett. 76, 2304 (2000); http://dx.doi.org/10.1063/1.126327 (3 pages) | Cited 37 times

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We have used a scanning YBa2Cu3O7 superconducting quantum interference device (SQUID) at 77 K to image currents in room-temperature integrated circuits. We acquired magnetic field data and used an inversion technique to convert the field data to a two-dimensional current density distribution, allowing us to locate current paths. With an applied current of 1 mA at 3 kHz, and a 150 μm separation between the sample and the SQUID, we found a spatial resolution of 50 μm in the converted current density images. This was about three times smaller than the SQUID–sample separation, i.e., three times better than the standard near-field microscopy limit, and about 10 times sharper than the raw magnetic field images. © 2000 American Institute of Physics.
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85.40.Qx Microcircuit quality, noise, performance, and failure analysis
85.25.Dq Superconducting quantum interference devices (SQUIDs)
07.68.+m Photography, photographic instruments; xerography
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
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