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17 Apr 2000

Volume 76, Issue 16, pp. 2149-2312

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Importance of coupling between longitudinal and transverse components for the creation of acoustic band gaps: The aluminum in mercury case

M. M. Sigalas and N. García

Appl. Phys. Lett. 76, 2307 (2000); http://dx.doi.org/10.1063/1.126328 (3 pages) | Cited 34 times

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Using the finite-difference time-domain method, we theoretically study elastic waves propagating in a two-dimensional composite consisting of aluminum cylinders embedded in mercury. The importance of the transverse components of the aluminum scatterers in the creation of the gaps is shown by switching off the transverse waves inside the aluminum. In that case, there are very narrow gaps or no gaps at all. In contrast, when the transverse components are on, as they should be, wide full band gaps appear for longitudinal incident waves. Since mercury supports only longitudinal waves, these are full elastic band gaps. © 2000 American Institute of Physics.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
68.35.Gy Mechanical properties; surface strains

High rate etching of 4H–SiC using a SF6/O2 helicon plasma

P. Chabert, N. Proust, J. Perrin, and R. W. Boswell

Appl. Phys. Lett. 76, 2310 (2000); http://dx.doi.org/10.1063/1.126329 (3 pages) | Cited 23 times

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The etch rate of 4H–SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of 1.35 μm/min along with good uniformity on 2 in. SiC substrates was achieved when this distance was minimum. Smooth etched surfaces free of micromasking have been obtained when using a nickel mask and the selectivity SiC/Ni was found to be about 50 under high etch rate conditions. Via holes have been etched to a depth of 330 μm in 4H–SiC substrates. © 2000 American Institute of Physics.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
81.05.Hd Other semiconductors
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