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17 Apr 2000

Volume 76, Issue 16, pp. 2149-2312

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Distributed feedback laser action from polymeric waveguides doped with oligo phenylene vinylene model compounds

Kevin P. Kretsch, Werner J. Blau, Vincent Dumarcher, Licinio Rocha, Celine Fiorini, Jean-Michel Nunzi, Steffen Pfeiffer, Hartwig Tillmann, and Hans-Heinrich Hörhold

Appl. Phys. Lett. 76, 2149 (2000); http://dx.doi.org/10.1063/1.126281 (3 pages) | Cited 19 times

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We report lasing studies of poly(styrene) waveguides doped with amino- and cyano-substituted oligo phenylene vinylene (distyryl benzene) model compounds under picosecond excitation. Optical feedback is provided by distributed Bragg gratings formed in the film by interference patterns in the pump beam. We demonstrate broad tunability of laser emission in these materials and simultaneous lasing at two wavelengths separated by 23 nm. Tuning ranges of the model compounds are compared with previous experiments. © 2000 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Jk Polymers and organics
42.79.Dj Gratings
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.70.Hj Laser materials

Evidence of band bending observed by electroabsorption studies in polymer light emitting device with ionomer/Al or LiF/Al cathode

Jihyun Yoon, Jang-Joo Kim, Tae-Woo Lee, and O-Ok Park

Appl. Phys. Lett. 76, 2152 (2000); http://dx.doi.org/10.1063/1.126282 (3 pages) | Cited 46 times

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We report electroabsorption studies of indium–tin–oxide (ITO)/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] insulating layer/Al light-emitting devices. An ionomer and LiF were used as the insulating layer. The internal electric field was nullified at the same bias voltage of 0.6 V for different cathodes of Al, ionomer/Al, and LiF/Al. The bias voltage is close to the work-function difference between ITO and Al. Average electric field in the emitting layer was reduced by inserting the insulating layers. On the contrary, current density was increased significantly. These observations suggest band bending in the devices with ionomer/Al or LiF/Al cathode. © 2000 American Institute of Physics.
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42.70.Jk Polymers and organics
85.60.Jb Light-emitting devices
78.20.Jq Electro-optical effects
78.66.Qn Polymers; organic compounds

Polarization-insensitive thermo-optic switch based on multimode polymeric waveguides with an ultralarge optical bandwidth

Xuejun Lu, Dechang An, Lin Sun, Qingjun Zhou, and Ray T. Chen

Appl. Phys. Lett. 76, 2155 (2000); http://dx.doi.org/10.1063/1.126283 (3 pages) | Cited 6 times

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A promising polarization-insensitive thermo-optic switch based on multimode polymeric waveguides is reported. This device has a packing density of 40 channels/cm. Simulation result shows that an extinction ratio of greater than 20 dB can be achieved with the device–electrode interaction length of 30 mm. The thermo-optic switch operating at wavelengths of 632.8 nm and 1.3 μm has been demonstrated experimentally with extinction ratios of 21 and 22 dB, respectively. Such a device has an intrinsic wide optical bandwidth due to the large dynamic range of the phase-matching condition implied by the multimode waveguides. The material employed provides us with a switching speed of 100 μs. © 2000 American Institute of Physics.
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42.82.Bq Design and performance testing of integrated-optical systems
42.70.Jk Polymers and organics
42.82.Et Waveguides, couplers, and arrays
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Waveguide optical isolator based on Mach–Zehnder interferometer

J. Fujita, M. Levy, R. M. Osgood, L. Wilkens, and H. Dötsch

Appl. Phys. Lett. 76, 2158 (2000); http://dx.doi.org/10.1063/1.126284 (3 pages) | Cited 52 times

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A waveguide optical isolator based on nonreciprocal interference is demonstrated. Ridge waveguides are fabricated in a Mach–Zehnder configuration on a single film of bismuth-, lutetium-, neodymium-iron garnet. With this design, no polarizers are required to achieve extinction in the backward propagation direction. This isolator exhibits a 19 dB extinction ratio at λ = 1.54 μm. A flat wavelength dependence, to within 2 dB, has been observed in the range between 1.49 and 1.57 μm. © 2000 American Institute of Physics.
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85.70.Ge Ferrite and garnet devices
42.79.Gn Optical waveguides and couplers
07.60.Ly Interferometers

Energy transfer upconversion in Er-doped LiTaO3

S. M. Kostritskii, D. B. Maring, R. F. Tavlykaev, and R. V. Ramaswamy

Appl. Phys. Lett. 76, 2161 (2000); http://dx.doi.org/10.1063/1.126285 (3 pages) | Cited 9 times

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The fluorescence spectrum of Er-indiffused LiTaO3 was measured and revealed strong anti-Stokes fluorescence (ASF) with upconverted green and red emissions when the 4F9/2 manifold of an Er3+ ion was pumped by either a 632.8 or a 647 nm laser. Investigation into the dependence of fluorescence intensity on pump intensity and depth profiling of the Stokes and anti-Stokes fluorescences revealed that the ASF is attributed mainly to energy transfer upconversion within Er3+ cluster sites. Postindiffusion processing in molten LiNO3 was found to be effective in suppressing the upconversion via decrease of the cluster site concentration. © 2000 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals
78.60.-b Other luminescence and radiative recombination
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
61.72.S- Impurities in crystals

Single-mode surface-plasmon laser

Alessandro Tredicucci, Claire Gmachl, Federico Capasso, Albert L. Hutchinson, Deborah L. Sivco, and Alfred Y. Cho

Appl. Phys. Lett. 76, 2164 (2000); http://dx.doi.org/10.1063/1.126183 (3 pages) | Cited 54 times

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Surface-plasmon modes confined at the interface between a metal and a semiconductor are exploited in place of conventional dielectric waveguides for the realization of a λ ∼ 17 μm semiconductor laser. The device is based on the quantum cascade concept and outperforms with its 38 mW of peak output power and 240 K of maximum operating temperature any previous semiconductor laser of comparable wavelength. Pure single-wavelength emission with a tuning rate of ∼1 nm/K is achieved using Bragg reflection from a two-metal grating that modulates the skin depth of the surface plasmons. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Er3+ ions–Si nanocrystals interactions and their effects on the luminescence properties

Giorgia Franzò, Domenico Pacifici, Vincenzo Vinciguerra, Francesco Priolo, and Fabio Iacona

Appl. Phys. Lett. 76, 2167 (2000); http://dx.doi.org/10.1063/1.126286 (3 pages) | Cited 70 times

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A detailed investigation on the interaction mechanisms between Er ions and Si nanocrystals (nc) is reported. Silicon nc were produced by high-temperature annealing of substoichiometric SiOx thin films grown by plasma-enhanced chemical vapor deposition. Subsequently, some of the samples were implanted by Er. These samples show intense room-temperature luminescence at both 1.54 and 0.98 μm. High-resolution luminescence spectra of Er-implanted Si nc suggest that the emitting Er ions are located in the SiO2 or at the Si nc/SiO2 interface. The pump-power dependence and the time decay of the 1.54 μm emission in Si nc with different Er contents have evidenced the presence of several nonradiative decay processes due to Er–Er and Er–Si nc interactions. Moreover, the number of Er ions per Si nc is shown to be a quite critical parameter in determining the final properties of the overall system. © 2000 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
61.46.-w Structure of nanoscale materials
71.35.-y Excitons and related phenomena
71.55.Cn Elemental semiconductors

Efficiency peaks in the transient electroluminescence of multilayer organic light-emitting devices

V. Savvate’ev, J. Friedl, L. Zou, W. J. Oldham, and J. Shinar

Appl. Phys. Lett. 76, 2170 (2000); http://dx.doi.org/10.1063/1.126287 (3 pages) | Cited 4 times

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It is shown that when multilayer organic light-emitting devices (OLEDs) containing hole (h+) and electron (e−) transporting layers (HTLs and ETLs, respectively) are biased with microsecond to millisecond voltage pulses higher than a threshold value Vth, the electroluminescence (EL) intensity increases dramatically to a peak value which then relaxes to the lower dc value; the relaxation time decreases strongly with increasing pulse amplitude. Since the current waveforms are essentially rectangular, the transient EL is proportional to the external quantum efficiency η. The value of Vth coincides with the bias for maximum dc efficiency typically observed when η is monitored vs V. This relation and the apparent absence of the transient peak in single-layer OLEDs suggest that it is due either to internal field redistribution processes in the ETL and HTL or to space charges, e.g., trapped polarons which accumulate at the HTL/ETL interface, and quench the emitting singlet excitons. It is concluded that highly efficient OLED operation may be achieved at high brightness by pulsed bias at an optimized duty cycle. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
71.38.-k Polarons and electron-phonon interactions
71.35.-y Excitons and related phenomena

Fabrication of nanometric zinc pattern with photodissociated gas-phase diethylzinc by optical near field

Y. Yamamoto, M. Kourogi, M. Ohtsu, V. Polonski, and G. H. Lee

Appl. Phys. Lett. 76, 2173 (2000); http://dx.doi.org/10.1063/1.126288 (3 pages) | Cited 34 times

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In situ patterning of zinc on a nanometric scale has been accomplished by photodissociation of gas-phase diethylzinc by optical near field. By using an ultraviolet optical fiber probe with an aperture diameter of 60 nm, dots with full width at half maxima of 60 and 70 nm were deposited, and were separated by 100 nm. The aspect ratio of the dots increased at the rate of 0.03/μJ, as the optical near field energy increased. A T-shape pattern was also fabricated by scanning the probe in an optical near field microscope system. © 2000 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
42.82.Cr Fabrication techniques; lithography, pattern transfer
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.79.Fc Near-field scanning optical microscopes

Infrared continuous-wave laser gain in neodymium aluminum borate: A promising candidate for microchip diode-pumped solid state lasers

D. Jaque, O. Enguita, J. García Solé, A. D. Jiang, and Z. D. Luo

Appl. Phys. Lett. 76, 2176 (2000); http://dx.doi.org/10.1063/1.126289 (3 pages) | Cited 19 times

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In this letter, continuous-wave laser gain at 1.06 and 1.3 μm is demonstrated in the neodymium aluminum borate [NdAl3(BO3)4] system. End pumping is achieved by means of a tunable argon-pumped Ti:sapphire and a diode laser. We report on low absorbed pump power at threshold and high pump-to-laser conversion efficiencies (up to 43% and 25% for laser oscillations at 1.06 and 1.3 μm, respectively) in a 0.3 mm long crystal. These good laser properties together with some other spectroscopic parameters described in this work (such as a 100% absorbance, a broad absorption spectrum around 800 nm and high emission cross section at 1.3 μm) make NdAl3(BO3)4 a promising material for diode-pumped microchip lasers. © 2000 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.70.Hj Laser materials

Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency

M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, and M.-C. Amann

Appl. Phys. Lett. 76, 2179 (2000); http://dx.doi.org/10.1063/1.126290 (3 pages) | Cited 53 times

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A significantly improved InP-based vertical-cavity surface-emitting laser with record device performance is demonstrated. Utilizing a twofold epitaxial growth process, self-adjusted lateral current confinement and index guiding are accomplished by means of a buried InGa(Al)As tunnel junction. Front and back mirrors are realized by 35 epitaxial InGaAlAs/InAlAs layer pairs and a 1.5 MgF2/a-Si layer pair, respectively. At room temperature and under continuous wave condition, lasers with small aperture diameters of only 13 μm exhibit record output powers of 1.6 mW with quantum efficiencies around 25%. For these devices, threshold current and voltage are as low as 4 mA and 1.2 V, respectively, because of low series resistances around 70 Ω. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.79.Bh Lenses, prisms and mirrors

Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates

D. P. Bour, N. M. Nickel, C. G. Van de Walle, M. S. Kneissl, B. S. Krusor, Ping Mei, and N. M. Johnson

Appl. Phys. Lett. 76, 2182 (2000); http://dx.doi.org/10.1063/1.126291 (3 pages) | Cited 18 times

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We demonstrate the feasibility of polycrystalline nitride semiconductor light-emitting diodes (LEDs). Here, polycrystalline LEDs were deposited on quartz substrates, incorporating a layer structure identical to that used for epitaxially grown LEDs. The deposition exhibits a tendency to produce c-oriented crystallites. Violet-blue (430 nm) operation of a polycrystalline LED is demonstrated, with spectral width of 38 nm, and emission efficiency approximately two orders of magnitude lower than for single-crystal LEDs. These LEDs could potentially be incorporated in large-area displays, since the deposition of polycrystalline materials avoids single-crystal substrates required for conventional nitride semiconductor light emitters. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.60.Pg Display systems

Two-wave mixing in Stark geometry photorefractive quantum wells under a magnetic field

Y. F. Zhang, J. M. Sun, M. H. Zhang, Z. G. Zhang, Q. Huang, and J. M. Zhou

Appl. Phys. Lett. 76, 2185 (2000); http://dx.doi.org/10.1063/1.126292 (3 pages) | Cited 1 time

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Using a modified method for measuring photorefractive two-wave mixing gain, we presented the experimental demonstration of nonreciprocal energy transfer during two-wave mixing under an external magnetic field. The nonreciprocal energy transfer is observed with mixing gain approaching 164 cm−1 and showed the characteristics of nonlinearity and saturation. A simple model of resonant tunneling and ultrafast carrier lifetime was proposed to explain these results. © 2000 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.66.Fd III-V semiconductors
78.20.Ls Magneto-optical effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Jq Electro-optical effects
42.40.Eq Holographic optical elements; holographic gratings
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