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17 Apr 2000

Volume 76, Issue 16, pp. 2149-2312

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Partially crystallized La0.5Sr0.5MnO3 thin films by laser ablation and their enhanced low-field magnetoresistance

J.-M. Liu, J. Li, Q. Huang, L. P. You, S. J. Wang, C. K. Ong, Z. C. Wu, Z. G. Liu, and Y. W. Du

Appl. Phys. Lett. 76, 2286 (2000); http://dx.doi.org/10.1063/1.126332 (3 pages) | Cited 32 times

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Amorphous, partial-crystallized, and epitaxial La0.5Sr0.5MnO3 thin films have been deposited at various temperatures of 200–650 °C on (001) SrTiO3 substrates using pulsed-laser deposition. The x-ray diffraction and high-resolution transmission electron microscopy indicate complete (001) orientation of the crystalline structures in these films. Enhanced low-field magnetoresistance effect has been observed for the partial-crystallized thin films where the nanosized ferromagnetic crystals are embedded in nonferromagnetic amorphous matrix. It is argued that the amorphous layer separating the neighboring nanocrystals behaves as the barrier for the spin-polarized tunneling and/or spin-dependent scattering, resulting in enhanced magnetoresistance at low magnetic field. © 2000 American Institute of Physics.
Show PACS
75.47.De Giant magnetoresistance
81.15.Fg Pulsed laser ablation deposition
75.47.Gk Colossal magnetoresistance
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