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17 Apr 2000

Volume 76, Issue 16, pp. 2149-2312

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Second harmonic and ponderomotive forces acting on electrons in an inhomogeneous radio frequency field of an inductive discharge

R. B. Piejak and V. A. Godyak

Appl. Phys. Lett. 76, 2188 (2000); http://dx.doi.org/10.1063/1.126293 (3 pages) | Cited 17 times

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The nonlinear second harmonic and ponderomotive forces acting on electrons in an inhomogeneous rf field have been derived from the electron equation of motion accounting for the energy dependence of electron–atom collisions. It is shown that in a collisionless plasma (ων) the second harmonic force F2ω and the ponderomotive Fdc force are similar in magnitude and frequency dependence (ω−2), where ω is the driving frequency and ν is the electron collision frequency. In a collisionally dominated plasma (ω<ν) both forces are diminished and have a different frequency dependence: F2ω∝(ων)−1 and Fdcν−2. Therefore, in a collisional plasma, the second harmonic force is always greater than the ponderomotive force. © 2000 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.25.Dg Plasma kinetic equations
52.25.Fi Transport properties

Synchrotron radiation-induced surface-conductivity of SiO2 for modification of plasma charging

C. Cismaru, J. L. Shohet, and J. P. McVittie

Appl. Phys. Lett. 76, 2191 (2000); http://dx.doi.org/10.1063/1.126330 (3 pages) | Cited 12 times

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In this work, we investigate the electrical surface conductivity that is temporarily induced in SiO2 by exposure to monochromatic vacuum-ultraviolet synchrotron radiation for modification of plasma charging. Special preprocessed test structures were exposed to controlled fluxes of monochromatic synchrotron radiation in the range of 500–3000 Å (approx. 4–25 eV), the energy band of most plasma vacuum-ultraviolet radiation. The highest oxide surface conductivity is achieved during irradiation by photons with energies between 15 and 18 eV. This enhanced oxide surface conductivity holds the potential to discharge high-aspect ratio structures that charge up during plasma processing due to electron shading, and thus minimize plasma-processing-induced damage to semiconductor devices. © 2000 American Institute of Physics.
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73.25.+i Surface conductivity and carrier phenomena
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.80.Jh Ion radiation effects
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