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24 Apr 2000

Volume 76, Issue 17, pp. 2325-2474

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SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor annealed in the forming gas with and without oxygen addition

Jun Lin, Katsuaki Natori, Yoshiaki Fukuzumi, Mitsuaki Izuha, Kohji Tsunoda, Kazuhiro Eguchi, Katsuhiko Hieda, and Daisuke Matsunaga

Appl. Phys. Lett. 76, 2430 (2000); http://dx.doi.org/10.1063/1.126366 (3 pages) | Cited 9 times

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Forming gas (3%H2+97%N2) anneals result in decomposition of SrRuO3 and increase the leakage current of the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor. However, we show that 0.5% O2 addition to the forming gas (3%H2+0.5%O2+96.5%N2) does not cause degradation of the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor, and can also enhance the performance of the transistor effectively. To correctly study the effect of a forming gas anneal on the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor, efforts should be made to avoid the possible O2 diffusion from air into furnace. © 2000 American Institute of Physics.
Show PACS
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.80.-e Ferroelectricity and antiferroelectricity
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments

Effects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO3 capacitors: Evidence of an interfacial space charge layer

F. M. Pontes, E. R. Leite, E. Longo, J. A. Varela, E. B. Araujo, and J. A. Eiras

Appl. Phys. Lett. 76, 2433 (2000); http://dx.doi.org/10.1063/1.126367 (3 pages) | Cited 70 times

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The dielectric properties of (Ba, Sr)TiO3 films were found to be remarkably sensitive to the postannealing treatment atmosphere. This study demonstrates that postannealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that postannealing in a nitrogen atmosphere produces a slight dielectric relaxation. Such dependence of the dielectric relaxation was related both to oxygen vacancies and to the presence of negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric film interface. © 2000 American Institute of Physics.
Show PACS
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Jp Dielectric breakdown and space-charge effects
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
77.80.Dj Domain structure; hysteresis

Ferroelectric domain reversal in congruent LiTaO3 crystals at elevated temperatures

Charles C. Battle, Sungwon Kim, Venkatraman Gopalan, Kendra Barkocy, Mool C. Gupta, Q. X. Jia, and T. E. Mitchell

Appl. Phys. Lett. 76, 2436 (2000); http://dx.doi.org/10.1063/1.126368 (3 pages) | Cited 10 times

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We report a four-times decrease in the electric fields for 180° domain reversal in congruent LiTaO3 crystals with an increase in temperature from 22 to 250 °C. This is accompanied by a substantial broadening of the field range over which domain reversal takes place, by an order of magnitude. The large internal fields of ∼5.5 kV/mm at room temperature, as measured by the asymmetry in polarization hysteresis loop, disappears at higher temperatures. With increasing temperature, the domain switching changes from lateral growth dominated to nucleation dominated kinetics. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization

Growth mode mapping of SrTiO3 epitaxy

M. Lippmaa, N. Nakagawa, M. Kawasaki, S. Ohashi, and H. Koinuma

Appl. Phys. Lett. 76, 2439 (2000); http://dx.doi.org/10.1063/1.126369 (3 pages) | Cited 46 times

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We have mapped the growth mode of homoepitaxial SrTiO3 thin films as a function of deposition rate and substrate temperature during pulsed laser deposition. The transition from layer by layer growth to step flow growth was mapped by making 260 depositions, 3 monolayers each, on a single substrate. The growth mode was determined by time-resolved reflection high-energy electron diffraction. An atomically smooth surface was regenerated after each deposition by annealing the sample at temperatures above 1200 °C. The depositions were performed at an oxygen pressure of 10−6 Torr and covered a temperature range from 900 to 1380 °C. The effective activation energies of surface migration on Ti- and Sr-terminated surfaces were determined from the mapping results. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition
77.55.-g Dielectric thin films
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