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24 Apr 2000

Volume 76, Issue 17, pp. 2325-2474

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Strong exciton-erbium coupling in Si nanocrystal-doped SiO2

P. G. Kik, M. L. Brongersma, and A. Polman

Appl. Phys. Lett. 76, 2325 (2000); http://dx.doi.org/10.1063/1.126334 (3 pages) | Cited 137 times

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Silicon nanocrystals were formed in SiO2 using Si ion implantation followed by thermal annealing. The nanocrystal-doped SiO2 layer was implanted with Er to a peak concentration of 1.8 at. %. Upon 458 nm excitation the sample shows a broad nanocrystal-related luminescence spectrum centered around 750 nm and two sharp Er luminescence lines at 982 and 1536 nm. By measuring the excitation spectra of these features as well as the temperature-dependent intensities and luminescence dynamics we conclude that (a) the Er is excited by excitons recombining within Si nanocrystals through a strong coupling mechanism, (b) the Er excitation process at room temperature occurs at a submicrosecond time scale, (c) excitons excite Er with an efficiency >55%, and (d) each nanocrystal can have at most ∼1 excited Er ion in its vicinity. © 2000 American Institute of Physics.
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71.35.Gg Exciton-mediated interactions
78.55.Ap Elemental semiconductors
78.55.Hx Other solid inorganic materials
61.72.up Other materials

Luminescence enhancement of EuS nanoclusters in zeolite

Wei Chen, Xinhui Zhang, and Yining Huang

Appl. Phys. Lett. 76, 2328 (2000); http://dx.doi.org/10.1063/1.126335 (3 pages) | Cited 20 times

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Large luminescence enhancement was observed in EuS clusters formed in ultrastable zeolite-Y by solid-state diffusion in vacuum at 600 °C. The emission of EuS clusters shifts to higher energies relative to that of bulk EuS powder. The blueshift and the emission enhancement are attributed to quantum-size confinement and are discussed based on the magnetic exciton and the magnetic polaron models, respectively. © 2000 American Institute of Physics.
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78.66.Li Other semiconductors
78.66.Vs Fine-particle systems
78.55.Mb Porous materials
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Pp Magnetic semiconductors

Optical fiber for dispersion addressing

Denis Donlagić and Brian Culshaw

Appl. Phys. Lett. 76, 2331 (2000); http://dx.doi.org/10.1063/1.126336 (3 pages) | Cited 1 time

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This letter presents a fully distributed forward propagating system, suitable for use with microbend sensors. The principle relies on selected mode launch in specially designed multimode fiber where a short pulse is launched into the fundamental mode. In the presence of microbend disturbance located down the sensing fiber, light couples from the fundamental to higher-order modes that propagate at different group velocity than the fundamental mode. The position of the disturbance is determined by the time delay between the pulse carried by the fundamental mode and by the pulse carried by higher-order modes. The group velocity difference is maximized by proper construction of the refractive index profile of the proposed fiber. Experimentally produced fibers exhibited difference of group velocities in ranges over 1%. This allows for easy reconstruction of position and amplitude of microbend deformations located down the sensing fiber. © 2000 American Institute of Physics.
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42.81.Pa Sensors, gyros
42.81.Dp Propagation, scattering, and losses; solitons

Electrically controllable azimuth optical rotator

Zhizhong Zhuang, Young Jin Kim, and J. S. Patel

Appl. Phys. Lett. 76, 2334 (2000); http://dx.doi.org/10.1063/1.126337 (3 pages) | Cited 2 times

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The transformation of the state of polarization (SOP) of light from one state to another can be graphically illustrated by a trajectory on the Poincaré sphere (PS). We use this method to illustrate the control of the azimuth SOP rotation on the PS. Traditionally, azimuth rotation is achieved by the use of a Faraday rotator or by the mechanical movements of birefringent wave plates. In this letter, an electrically controllable azimuth optical rotator is introduced theoretically and verified experimentally. It consists of two quarter-wave plates and one liquid-crystal variable wave plate and allows polarization rotation of an arbitrary polarized light by an angle determined by the magnitude of the applied field. This electrical approach avoids the errors and inconvenience associated with the magnetic field and the mechanical movements of other methods. © 2000 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Kr Display devices, liquid-crystal devices
42.25.Ja Polarization

Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser

Daniel Hofstetter, Linda T. Romano, Thomas L. Paoli, David P. Bour, and Michael Kneissl

Appl. Phys. Lett. 76, 2337 (2000); http://dx.doi.org/10.1063/1.126338 (3 pages) | Cited 1 time

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We demonstrate an optically pumped complex-coupled InGaN/GaN-based multiple-quantum-well distributed-feedback laser in the violet/blue spectral region. The third-order grating providing feedback was defined holographically and dry etched through a portion of the active region by chemically assisted ion-beam etching. Epitaxial overgrowth of the GaN waveguide completed the device structure without introducing dislocations, as shown by transmission electron microscopy. The laser emitted light at 392.7 nm with high side-mode suppression and a narrow linewidth of 1.5 Å. In contrast to Fabry–Pérot lasers fabricated from the same piece of material, only a very minor change in emission wavelength was observed when operating the device at higher pump intensities. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.40.Eq Holographic optical elements; holographic gratings
81.65.Cf Surface cleaning, etching, patterning
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
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