We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 HBT takes advantage of the narrower band gap energy (Eg = 1.2 eV) of In0.03Ga0.97As0.99N0.01, which is lattice matched to GaAs. Compared with the Al0.3Ga0.7As/GaAs material system, the Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 material system has a larger conduction-band offset, while the valence-band offset remains comparable. This characteristic band alignment is very suitable for P-n-p HBT applications. The device’s peak current gain is 23, and it has a turn-on voltage of 0.77 V, which is 0.25 V lower than in a comparable P-n-p Al0.3Ga0.7As/GaAs HBT. © 2000 American Institute of Physics.