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8 May 2000

Volume 76, Issue 19, pp. 2647-2800

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Trapping of quasiparticles of a nonequilibrium superconductor

J. P. Pekola, D. V. Anghel, T. I. Suppula, J. K. Suoknuuti, A. J. Manninen, and M. Manninen

Appl. Phys. Lett. 76, 2782 (2000); http://dx.doi.org/10.1063/1.126474 (3 pages) | Cited 25 times

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We have performed experiments where hot electrons are extracted from a normal metal into a superconductor through a tunnel junction. We have measured the cooling performance of such NIS junctions, especially in the cases where another normal metal electrode, a quasiparticle trap, is attached to the superconductor at different distances from the junction in direct metal–to–metal contact or through an oxide barrier. The direct contact at a submicron distance allows superior thermalization of the superconductor. We have analyzed theoretically the heat transport in this system. From both experiment and theory, it appears that NIS junctions can be used as refrigerators at low temperatures only with quasiparticle traps attached. © 2000 American Institute of Physics.
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74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

High visible rejection AlGaN photodetectors on Si(111) substrates

J. L. Pau, E. Monroy, F. B. Naranjo, E. Muñoz, F. Calle, M. A. Sánchez-García, and E. Calleja

Appl. Phys. Lett. 76, 2785 (2000); http://dx.doi.org/10.1063/1.126475 (3 pages) | Cited 23 times

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We report on the fabrication and characterization of Schottky barrier photodetectors based on Si-doped Al0.35Ga0.65N layers grown on Si(111) substrates, for solar UV-band monitoring (λ<320 nm). The epilayers have been obtained by plasma-assisted molecular-beam epitaxy, showing a full width at half maximum of 15 arcmin in x-ray diffraction measurements. A very high visible rejection (>104) and a responsivity of 5 mA/W at 257 nm are reached. The detector time response is limited by the resistance×capacitance product, with a minimum time constant of 20 ns in the zero-load-resistance limit. After photodiode voltage breakdown, the effect on the detector response is discussed. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Pw Imaging detectors and sensors
85.30.Kk Junction diodes

InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

P. C. Chang, A. G. Baca, N. Y. Li, P. R. Sharps, H. Q. Hou, J. R. Laroche, and F. Ren

Appl. Phys. Lett. 76, 2788 (2000); http://dx.doi.org/10.1063/1.126476 (3 pages) | Cited 24 times

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We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 HBT takes advantage of the narrower band gap energy (Eg = 1.2 eV) of In0.03Ga0.97As0.99N0.01, which is lattice matched to GaAs. Compared with the Al0.3Ga0.7As/GaAs material system, the Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 material system has a larger conduction-band offset, while the valence-band offset remains comparable. This characteristic band alignment is very suitable for P-n-p HBT applications. The device’s peak current gain is 23, and it has a turn-on voltage of 0.77 V, which is 0.25 V lower than in a comparable P-n-p Al0.3Ga0.7As/GaAs HBT. © 2000 American Institute of Physics.
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85.30.Pq Bipolar transistors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
73.61.Ey III-V semiconductors

Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design

S. G. Wallace, B. J. Robinson, P. Mascher, H. K. Haugen, D. A. Thompson, D. Dalacu, and L. Martinu

Appl. Phys. Lett. 76, 2791 (2000); http://dx.doi.org/10.1063/1.126477 (3 pages) | Cited 1 time

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The refractive indices of In1−xGaxAsyP1−y grown lattice-matched to GaAs by gas-source molecular-beam epitaxy, have been measured by variable angle spectroscopic ellipsometry. Indices in the transparent regime of these quaternaries, at 980 and 808 nm (relevant to the design of pump sources for erbium-doped fiber amplifiers and Nd:YAG lasers, respectively) and at 850 nm, are presented. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.55.Cr III-V semiconductors
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