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3 Jan 2000

Volume 76, Issue 1, pp. 1-128

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Space-charge-limited electron currents in 8-hydroxyquinoline aluminum

M. Stößel, J. Staudigel, F. Steuber, J. Blässing, J. Simmerer, and A. Winnacker

Appl. Phys. Lett. 76, 115 (2000); http://dx.doi.org/10.1063/1.125674 (3 pages) | Cited 49 times

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We investigate electron injection and transport in single-layer devices of 8-hydroxyquinoline aluminum sandwiched between two electrodes. Electrodes comprising a thin lithium fluoride layer are compared with co-evaporated magnesium–silver cathodes and with pure aluminum cathodes. By employing both transient and quasistatic current measurements, the impact of the LiF-layer thickness on electron injection is investigated. It is demonstrated that contacts comprising 0.1–0.2 nm LiF and an aluminum capping layer are able to sustain space-charge-limited currents in 8-hydroxyquinoline aluminum. Further, steady-state current–voltage measurements as a function of temperature are discussed with respect to trap distributions in 8-hydroxyquinoline aluminum. © 2000 American Institute of Physics.
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73.50.Fq High-field and nonlinear effects
73.61.Ph Polymers; organic compounds
78.66.Qn Polymers; organic compounds

Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors

C. T. Angelis, C. A. Dimitriadis, F. V. Farmakis, J. Brini, G. Kamarinos, V. K. Gueorguiev, and Tz. E. Ivanov

Appl. Phys. Lett. 76, 118 (2000); http://dx.doi.org/10.1063/1.125675 (3 pages) | Cited 5 times

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The relationship between low-frequency drain current noise spectral density SI and grain-boundary potential barrier height Vb is investigated in high-temperature-processed polycrystalline silicon thin-film transistors. It is demonstrated that a general empirical relationship exists between SI and Vb indicating that the noise sources are located at the grain boundaries. The implications of the obtained relationship between SI and Vb from the practical viewpoint are discussed. © 2000 American Institute of Physics.
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85.30.Tv Field effect devices
61.72.Mm Grain and twin boundaries
85.30.De Semiconductor-device characterization, design, and modeling

Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

T. Egawa, H. Ishikawa, M. Umeno, and T. Jimbo

Appl. Phys. Lett. 76, 121 (2000); http://dx.doi.org/10.1063/1.125676 (3 pages) | Cited 33 times

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A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metalorganic chemical vapor deposition. The two-dimensional electron gas mobility as high as 9260 cm2/V s with the sheet carrier density 4.8×1012 cm−2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length 2.1 μm at 25 °C. At an elevated temperature of 350 °C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. © 2000 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Current–voltage characteristics of a GaAs Schottky diode accounting for leakage paths

J. A. Ellis and P. A. Barnes

Appl. Phys. Lett. 76, 124 (2000); http://dx.doi.org/10.1063/1.125677 (2 pages) | Cited 9 times

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Many fabricated Schottky diodes exhibit significant deviations from the theoretically calculated current–voltage (I–V) characteristics of ideal Schottky diodes. Attempts have been made to account for this deviation using interface states or surface state densities. Previous models have used the interfacial layer model to analyze the nonideal I–V characteristics of a GaAs Schottky barrier. We show here how nonideal behavior can be explained by considering surface leakage currents and material resistance. The standard figure of merit of Schottky diodes is the ideality factor, which can be obtained from measurements of δV/δ ln(I). By taking into account device resistance and shunt leakage paths with physically appropriate parameters, a relationship between δV/δ ln(I) and voltage can be established, which yields a better understanding of transport across the interface(s) of real Schottky diodes. © 2000 American Institute of Physics.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes
73.20.At Surface states, band structure, electron density of states
85.30.De Semiconductor-device characterization, design, and modeling
73.61.Ey III-V semiconductors
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