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3 Jan 2000

Volume 76, Issue 1, pp. 1-128

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Transmission electron microscopy study on ferroelectric domain structure in SrBi2Ta2O9 ceramics

Y. Ding, J. S. Liu, and Y. N. Wang

Appl. Phys. Lett. 76, 103 (2000); http://dx.doi.org/10.1063/1.125670 (3 pages) | Cited 21 times

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A transmission electron microscopy investigation has been conducted on the domain structure in SrBi2Ta2O9 ceramics. From the 90° rotation relationship of the electron diffraction pattern of the [001] zone axis, a 90° domain wall can be confirmed. It is due to the failure of Friedel’s law that the contrast of a 180° domain wall can be identified. The antiphase boundary can be seen clearly in the dark-field image, which is taken by the (300) superlattice reflection. The 90° domain wall, as well as antiphase the boundary (APB), has an irregular configuration. The APB combined with the 90° domain wall is also identified. © 2000 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.Mm Grain and twin boundaries

Nanoscopic switching behavior of epitaxial SrBi2Ta2O9 films deposited by pulsed laser deposition

A. Gruverman, A. Pignolet, K. M. Satyalakshmi, M. Alexe, N. D. Zakharov, and D. Hesse

Appl. Phys. Lett. 76, 106 (2000); http://dx.doi.org/10.1063/1.125671 (3 pages) | Cited 26 times

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We report results on scanning force microscopy (SFM) studies of epitaxial SrBi2Ta2O9 films which, in conjunction with complementary x-ray diffraction, scanning and transmission electron microscopy data, allow us to establish direct correlation between the crystallographic structure at the submicrometer range and the nano- and macroscopic switching behavior of the films. SFM topographic analysis of the films revealed a high degree of inhomogeneity at the submicrometer level: a number of rectangular and spherical grains protruding out of the flat surface. It has been found that the ferroelectric behavior of the films is primarily due to the (110) and (100)-oriented grains, while a flat background is c oriented and therefore is not switchable. Remanent polarization values obtained using SFM data were consistent with the results of the macroscopic hysteresis loop measurements. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.22.Ej Polarization and depolarization

On the origin of the large piezoelectric effect in morphotropic phase boundary perovskite single crystals

Andrew J. Bell

Appl. Phys. Lett. 76, 109 (2000); http://dx.doi.org/10.1063/1.125672 (3 pages) | Cited 10 times

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The high-field behavior of perovskite ferroelectrics close to a morphotropic phase boundary is investigated using the thermodynamic theory of ferroelectrics. For Pb(Zr0.55Ti0.45)O3, a phase transition from the rhombohedral to the tetragonal state is predicted for a critical field of approximately 4 MV m−1 parallel to the 〈001〉 axis. The transition is characterized by a strain of 0.015 parallel to 〈001〉. It is postulated that this transition is the origin of the large field-induced strains observed in single crystals of complex perovskite solid solutions with morphotropic phase boundaries. It is proposed that the transition is diffuse with respect to the applied field due to the inhomogeneity of the critical field arising from the B-site disorder in the complex perovskites. A simple random-field model illustrates the hypothesis. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.65.-j Piezoelectricity and electromechanical effects
64.70.K- Solid-solid transitions

Stable zirconium silicate gate dielectrics deposited directly on silicon

G. D. Wilk and R. M. Wallace

Appl. Phys. Lett. 76, 112 (2000); http://dx.doi.org/10.1063/1.125673 (3 pages) | Cited 197 times

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Zirconium silicate (ZrSixOy) gate dielectric films with ∼ 3–5 at. % Zr exhibit excellent electrical properties and high thermal stability in direct contact with Si. We demonstrate an equivalent oxide thickness of about 21 Å for a 50 Å ZrSixOy film sputter-deposited directly on a Si substrate, as measured by capacitance–voltage techniques, with a hysteresis shift less than 10 mV. Leakage currents for these films are very low, approximately 1×10−6 A/cm2 at 1.0 V bias in accumulation. Films ramped to hard breakdown exhibit breakdown fields Ebd ∼ 10 MV/cm. Excellent electrical properties are obtained with Au electrodes, in particular. © 2000 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.60.Dv Thermal stability; thermal effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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