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10 Jan 2000

Volume 76, Issue 2, pp. 131-250

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Unidirectional ring TI3+:Al2O3 laser generation at the wavelength of an atomic absorption line by bidirectional passive self-injection locking

M. A. Deneva, M. N. Nenchev, R. Barbé, and J.-C. Keller

Appl. Phys. Lett. 76, 131 (2000); http://dx.doi.org/10.1063/1.125680 (3 pages)

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A simple, purely optical approach to produce, in a ring Ti:Al2O3 laser, a pulsed unidirectional generation, spectrally fixed at a reference atomic absorption line is described. The control relies on the unbalance between two opposite, passive, wavelength-scanned self-injections that is produced by the absorption at the reference line. It is shown both experimentally and theoretically that: (i) the emitted spectrum is centered at the absorption maximum and (ii) due to the nonlinear character of the process the spectrum is narrowed several times compared with an absorption linewidth. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

Recombination-independent photogeneration of ultrashort electrical pulses

J. F. Holzman, F. E. Vermeulen, and A. Y. Elezzabi

Appl. Phys. Lett. 76, 134 (2000); http://dx.doi.org/10.1063/1.125679 (3 pages) | Cited 5 times

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We report on the operation of a photoconductive (PC) switch, capable of generating ultrashort electrical pulses. The PC switch geometry employed utilizes the rising edge of an ultrafast optical excitation pulse to both turn “on” and later turn “off” an electrical transient. The generation mechanism is, therefore, independent of both the semiconductor material and carrier lifetime. It is found that electrical pulses as short as 2 ps can be formed in bulk GaAs and that the duration of these pulses is limited solely by the time constant constraints of the device. By reducing the device time constant, therefore, this technique can be applied to subpicosecond switching of electrical pulses. © 2000 American Institute of Physics.
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85.60.-q Optoelectronic devices

Raman spectroscopy of electrochemically self-assembled CdS quantum dots

A. Balandin, K. L. Wang, N. Kouklin, and S. Bandyopadhyay

Appl. Phys. Lett. 76, 137 (2000); http://dx.doi.org/10.1063/1.125681 (3 pages) | Cited 49 times

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We report a Raman spectroscopy investigation of electrochemically self-assembled quasiperiodic arrays of CdS quantum dots with characteristic feature size of 10 nm. The dots were synthesized using electrochemical deposition of CdS into a porous anodized alumina film. Polarization-dependent Raman scattering study over an extended frequency range reveals the quantization of electronic states in the conduction band and intersubband transitions. Raman peaks observed at 2919 and 3050 cm−1 are attributed to transitions between the lowest two subbands. The results suggest that quantum dot arrays, produced by inexpensive robust electrochemical means, may be suitable for infrared detector applications. © 2000 American Institute of Physics.
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78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.Fs III-V and II-VI semiconductors
81.05.Dz II-VI semiconductors
81.15.Pq Electrodeposition, electroplating
82.45.-h Electrochemistry and electrophoresis
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Launching surface plasmons into nanoholes in metal films

C. Sönnichsen, A. C. Duch, G. Steininger, M. Koch, G. von Plessen, and J. Feldmann

Appl. Phys. Lett. 76, 140 (2000); http://dx.doi.org/10.1063/1.125682 (3 pages) | Cited 32 times

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We investigate optical transmission through individual nanometer-sized holes in opaque metal films using scanning near-field optical microscopy. We show unambiguously that excitation and lateral propagation of surface plasmons support the light transmission through these nanoholes. The direction of the surface plasmon propagation is given by the light polarization, thus controlled addressing of individual holes is possible. In addition, we find characteristic interference effects due to scattering of surface plasmons off holes. © 2000 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.61.At Metal and metallic alloys
78.66.Bz Metals and metallic alloys

Nanoscale backswitched domain patterning in lithium niobate

V. Ya. Shur, E. L. Rumyantsev, E. V. Nikolaeva, E. I. Shishkin, D. V. Fursov, R. G. Batchko, L. A. Eyres, M. M. Fejer, and R. L. Byer

Appl. Phys. Lett. 76, 143 (2000); http://dx.doi.org/10.1063/1.125683 (3 pages) | Cited 70 times

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We demonstrate a promising method of nanoscale domain engineering, which allows us to fabricate regular nanoscale domain patterns consisting of strictly oriented arrays of nanodomains (diameter down to 30 nm and density up to 100 μm−2) in lithium niobate. We produce submicron domain patterns through multiplication of the domain spatial frequency as compared with the electrode one. The fabrication techniques are based on controlled backswitched poling. © 2000 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.65.Cf Surface cleaning, etching, patterning
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
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A diagnostic method for both plasma ion and electron temperatures under simultaneous incidence of charge-exchange particles and x rays into a semiconductor detector array

T. Numakura, T. Cho, J. Kohagura, M. Hirata, R. Minami, Y. Nishizawa, T. Sasuga, M. Yoshida, Y. Sakamoto, Y. Nakashima, T. Tamano, K. Yatsu, and S. Miyoshi

Appl. Phys. Lett. 76, 146 (2000); http://dx.doi.org/10.1063/1.125684 (3 pages) | Cited 8 times

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An idea for using semiconductor detectors to simultaneously observe both plasma ion Ti and electron Te temperatures is proposed. The idea is also experimentally verified in tandem-mirror plasma shots. This method is developed on the basis of an alternative “positive” use of a semiconductor “dead layer” as an energy-analysis filter. Filtering dependence of charge-exchange neutral particles from plasmas on the thickness of a thin (on the order of nm thick) SiO2 layer is employed for analyzing Ti in the range from hundreds to thousands of eV. Even under the conditions of simultaneous incidence of such particles and x rays into semiconductor detectors, the different dependence on their penetration lengths and deposition depths in semiconductor materials makes it possible to distinguish particles (for Ti) from x rays (for Te). In this letter, proof-of-principle plasma experiments for the proposed idea are carried out to verify the availability of this concept of distinguishing and identifying each value of Ti and Te by the use of various thin filtering materials prior to the use of thinner dead layers. © 2000 American Institute of Physics.
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52.70.Nc Particle measurements
52.70.La X-ray and γ-ray measurements
28.52.Av Theory, design, and computerized simulation
52.55.-s Magnetic confinement and equilibrium
52.25.-b Plasma properties

Evolution of the electron energy distribution function in a planar inductive argon discharge

Sang-Hun Seo, S. S. Kim, Jung-In Hong, C. S. Chang, and Hong-Young Chang

Appl. Phys. Lett. 76, 149 (2000); http://dx.doi.org/10.1063/1.125685 (3 pages) | Cited 9 times

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The evolution of the electron energy distribution function (EEDF) over a pressure range of 5–100 mTorr is investigated in a planar inductive argon discharge. It is found that the EEDF, which appears to be a bi-Maxwellian distribution with a two-temperature structure at low pressures, evolves into a Druyvesteyn-like distribution as the pressure increases. The electron energy diffusion coefficient, which describes electron heating, is calculated under the same discharge conditions using discharge parameters and numerical results show that the heating of low-energy electrons is enhanced as the pressure increases resulting in a transition of the EEDF to a Druyvesteyn distribution. © 2000 American Institute of Physics.
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52.80.Dy Low-field and Townsend discharges
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
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Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system

X. L. Xu, C. D. Beling, S. Fung, Y. W. Zhao, N. F. Sun, T. N. Sun, Q. L. Zhang, H. H. Zhan, B. Q. Sun, J. N. Wang, W. K. Ge, and P. C. Wong

Appl. Phys. Lett. 76, 152 (2000); http://dx.doi.org/10.1063/1.125686 (3 pages) | Cited 19 times

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It has recently been suggested that the thin degenerate layer found at the GaN/sapphire interface results from a high concentration of stacking faults. The studies of this letter, however, show that this is not the most likely explanation for the presence of such a degenerate layer. Using x-ray energy-dispersive spectroscopy and secondary ion-mass spectroscopy, profile distributions of elements Ga, N, O, C, and Al, near the interface, have been obtained. The distributions reveal very high O and Al concentrations in the GaN film within 0.2 μm from the interface, together with a material depletion of Ga and N. Such conditions strongly favor n+ conductivity in this interfacial region because not only are N-vacancy and N-site O donors present, but Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-layer (film plus interface) conduction has been modeled, and the effect of conduction in the GaN film thus isolated. © 2000 American Institute of Physics.
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68.35.Ct Interface structure and roughness
61.72.Nn Stacking faults and other planar or extended defects
68.35.Fx Diffusion; interface formation

Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films

F. S. Razavi, G. Gross, H.-U. Habermeier, O. Lebedev, S. Amelinckx, G. Van Tendeloo, and A. Vigliante

Appl. Phys. Lett. 76, 155 (2000); http://dx.doi.org/10.1063/1.125687 (3 pages) | Cited 7 times

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We are reporting an unexpected metal insulator transition at the ferromagnetic phase-transition temperature for thin films of La0.9Sr0.1MnO3 (<50 nm), grown on a (100) face of SrTiO3 substrate. For the thicker films (>50 nm), similar to the single crystal, no such transition is observed below TC. Additionally, we observe the suppression of the features associated with charge or orbital ordering in intentionally La-deficient thin films of La0.88Sr0.1MnO3 (<75 nm). In thin films, transmission electron microscopy reveals a compressive strain due to the epitaxial growth, that is, lattice parameters adopt those of the cubic lattice of SrTiO3. As the film thickness increases, coherent microtwinning is observed in the films and the films relax to a orthorhombic structure. © 2000 American Institute of Physics.
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72.60.+g Mixed conductivity and conductivity transitions
71.30.+h Metal-insulator transitions and other electronic transitions
68.55.-a Thin film structure and morphology
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
61.72.Mm Grain and twin boundaries

Energy-dispersive, x-ray reflectivity density measurements of porous SiO2 xerogels

D. Windover, T.-M. Lu, S. L. Lee, A. Kumar, H. Bakhru, C. Jin, and W. Lee

Appl. Phys. Lett. 76, 158 (2000); http://dx.doi.org/10.1063/1.125688 (3 pages) | Cited 10 times

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X-ray reflectivity has been used to measure nondestructively the density of thin, porous, silica xerogels used for interlayer dielectric applications. The critical angle, defined through total external reflection, was measured for multiple x-ray energies to correct for sample misalignment error in the determination of the density for the films. This density was used to extrapolate the percentage porosity, assuming a bulk SiO2 density standard. The results were compared to those obtained by Rutherford backscattering and ellipsometry techniques. © 2000 American Institute of Physics.
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61.43.Gt Powders, porous materials
61.05.cm X-ray reflectometry (surfaces, interfaces, films)
82.70.Gg Gels and sols

Vapor-grown atomic filaments of graphite

F. Okuyama, T. Hayashi, M. Kawasaki, and K. Ibe

Appl. Phys. Lett. 76, 161 (2000); http://dx.doi.org/10.1063/1.125689 (3 pages) | Cited 2 times

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Field emission transmission electron microscopy has revealed the presence of atomic filaments extending from the open edge of a graphite cage formed in a glow-discharge plasma. The filaments are vapor grown, presenting complicated deformations such as curling, waving, and looping in the free space. The filaments correspond well to one carbon atom in diameter, strongly indicating that they are linear chains of carbon atoms, the presence of which was earlier suggested by Smalley et al. [Science 269, 1550 (1995)]. © 2000 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.15.Kk Vapor phase epitaxy; growth from vapor phase
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

In situ electron microscopy studies of electromigration in stacked Al(Cu)/TiN interconnects

J. T. Lau, J. A. Prybyla, and S. K. Theiss

Appl. Phys. Lett. 76, 164 (2000); http://dx.doi.org/10.1063/1.125690 (3 pages) | Cited 9 times

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In situ transmission electron microscopy experiments on electromigration in Al(0.5%Cu)/TiN interconnects show that the TiN barrier layer improves reliability not only by acting as a shunting layer, but also by dramatically influencing electromigration behavior within the Al(Cu) interlayer. One highlight of these experiments is a complete absence of void migration in such lines, as opposed to Al(Cu) lines on SiO2 without barrier layer [Al(Cu)/SiO2]. This remarkable immobility of voids in Al(Cu)/TiN lines has a profound impact on failure mechanisms, lifetimes, and reliability of interconnects. The TiN barrier layer also dramatically effects void nucleation and growth. © 2000 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography

Tomonori Ishikawa, Tetsuya Nishimura, Shigeru Kohmoto, and Kiyoshi Asakawa

Appl. Phys. Lett. 76, 167 (2000); http://dx.doi.org/10.1063/1.125691 (3 pages) | Cited 50 times

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We studied a site-control technique for InAs quantum dots (QDs) on GaAs substrates using a combination of in situ electron-beam (EB) lithography and self-organized molecular-beam epitaxy. In small, shallow holes formed on prepatterned mesa structures by EB writing and Cl2 gas etching, QDs were selectively formed, without any formation on the flat region between the patterned holes. The density of the QDs in each hole was dependent on the hole depth, indicating that atomic steps on the GaAs surfaces act as migration barriers to In adatoms. In an array of holes including 5–6 monolayer steps, a single QD was arranged in each hole. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.40.Hp Lithography, masks and pattern transfer
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Enhanced quality of epitaxial AlN thin films on 6H–SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition

S. Tungasmita, J. Birch, P. O. Å. Persson, K. Järrendahl, and L. Hultman

Appl. Phys. Lett. 76, 170 (2000); http://dx.doi.org/10.1063/1.125692 (3 pages) | Cited 17 times

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Epitaxial AlN thin films have been grown on 6H–SiC substrates by ultra-high-vacuum (UHV) ion-assisted reactive dc magnetron sputtering. The low-energy ion-assisted growth (Ei = 17–27 eV) results in an increasing surface mobility, promoting domain-boundary annihilation and epitaxial growth. Domain widths increased from 42 to 135 nm and strained-layer epitaxy was observed in this energy range. For Ei>52 eV, an amorphous interfacial layer of AlN was formed on the SiC, which inhibited epitaxial growth. Using UHV condition and very pure nitrogen sputtering gas yielded reduced impurity levels in the films (O: 3.5×1018 cm−3). Analysis techniques used in this study are in situ reflection high-energy electron diffraction, secondary-ion-mass spectroscopy, atomic-force microscopy, x-ray diffraction, and cross-section high-resolution electron microscopy. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Cd Deposition by sputtering
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.35.B- Structure of clean surfaces (and surface reconstruction)

Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si

C. Spinella, S. Coffa, C. Bongiorno, S. Pannitteri, and M. G. Grimaldi

Appl. Phys. Lett. 76, 173 (2000); http://dx.doi.org/10.1063/1.125693 (3 pages) | Cited 34 times

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The structural and optical properties of β-FeSi2 precipitates in Si have been analyzed. Float zone Si samples were implanted at 250 °C with 350 keV Fe ions to fluences in the range 1–5×1015/cm2 and annealed in vacuum at 800 °C for times up to 24 h. Detailed morphological analyses of these samples, using transmission electron microscopy, reveal the presence of (i) a band of small (with a diameter <30 nm) highly strained β-FeSi2 precipitates centered at a depth of ∼150 nm, (ii) a band of large (>100 nm diameter) fully relaxed β-FeSi2 precipitates centered at a depth of ∼320 nm, and (iii) residual extended defects. A sharp photoluminescence peak at 1.54 μm is measured at 17 K. This peak remains unchanged when the region containing the small precipitates is removed, using Ar sputtering. On the other hand, it is also fully suppressed when the large precipitates region is removed and a high concentration of extended defects remains in the samples. This allowed us to identify the large unstrained precipitates as the main sources of the 1.54 μm luminescence. Finally, we found that carrier recombination within iron precipitates is characterized by a weak oscillator strength resulting in a long decay lifetime of the 1.54 μm signal at 17 K (∼60 μs) and in a strong temperature quenching of the luminescence yield. © 2000 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
61.72.Nn Stacking faults and other planar or extended defects
64.75.-g Phase equilibria
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High-resolution depth profiling in ultrathin Al2O3 films on Si

E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk

Appl. Phys. Lett. 76, 176 (2000); http://dx.doi.org/10.1063/1.125694 (3 pages) | Cited 205 times

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A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and cross-sectional high-resolution transmission electron microscopy were used to study compositional and microstructural aspects of ultrathin (sub-10 nm) Al2O3 films on silicon. All three techniques demonstrate uniform continuous films of stoichiometric Al2O3 with abrupt interfaces. These film properties lead to the ability of making metal-oxide semiconductor devices with Al2O3 gate dielectric with equivalent electrical thickness in the sub-2 nm range. © 2000 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.Nq Composition and phase identification
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.66.Bi Elemental solids
61.66.Dk Alloys

Dynamic visualization of stress distribution by mechanoluminescence image

Chao-Nan Xu, Xu-Guang Zheng, Morito Akiyama, Kazuhiro Nonaka, and Tadahiko Watanabe

Appl. Phys. Lett. 76, 179 (2000); http://dx.doi.org/10.1063/1.125695 (3 pages) | Cited 67 times

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We report the realization of the dynamic image of stress distribution by developing a remarkably strong mechanoluminescence (ML) material of Sr0.975Al2O3.985:Eu0.01, which can emit four orders of magnitude larger intensity than that of the reported strong ML material of quartz crystal. This ML material can be mixed in the target composite or coated on the surface to sense stress by emitting visible light. This method is applicable to the dynamic visualization of stress distribution in a solid not only in the atmosphere but also in an aqueous environment. © 2000 American Institute of Physics.
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78.60.Mq Sonoluminescence, triboluminescence
81.70.Fy Nondestructive testing: optical methods
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
62.20.-x Mechanical properties of solids

In situ imaging and spectroscopy of single-wall carbon nanotube synthesis by laser vaporization

A. A. Puretzky, D. B. Geohegan, X. Fan, and S. J. Pennycook

Appl. Phys. Lett. 76, 182 (2000); http://dx.doi.org/10.1063/1.125696 (3 pages) | Cited 48 times

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The synthesis of single-wall carbon nanotubes by Nd:YAG laser vaporization of a graphite/(Ni, Co) target is investigated by laser-induced luminescence imaging and spectroscopy of Co atoms, C2 and C3 molecules, and clusters at 1000 °C in flowing 500 Torr Ar. These laser-induced emission images under typical synthesis conditions show that the plume of vaporized material is segregated and confined within a vortex ring which maintains a ∼1 cm3 volume for several seconds. Using time-resolved spectroscopy and spectroscopic imaging, the time for conversion of atomic and molecular species to clusters was measured for both carbon (200 μs) and cobalt (2 ms). This rapid conversion of carbon to nanoparticles, combined with transmission electron microscopy analysis of the collected deposits, indicate that nanotube growth occurs over several seconds in a plume of mixed nanoparticles. By adjusting the time spent by the plume within the high-temperature zone using these in situ diagnostics, single-walled nanotubes of controlled length were grown at an estimated rate of 0.2 μm/s. © 2000 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
78.66.Tr Fullerenes and related materials
81.05.ub Fullerenes and related materials
78.55.Hx Other solid inorganic materials
78.47.-p Spectroscopy of solid state dynamics

Electroluminescence thermal quenching in SrS:Cu thin-film electroluminescent devices

B. A. Baukol, J. C. Hitt, P. D. Keir, and J. F. Wager

Appl. Phys. Lett. 76, 185 (2000); http://dx.doi.org/10.1063/1.125697 (3 pages) | Cited 8 times

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Electroluminesence (EL) thermal quenching refers a reduction in luminance, concomitant with a reduction in transferred charge, when an alternating-current thin-film electroluminescent (ACTFEL) device is operated at an elevated temperature. EL thermal quenching is found to be significant in SrS:Cu ACTFEL devices operated above ∼ 60-80 °C. Maximum transferred charge-maximum applied voltage (Qmax-Vmax) and transferred charge capacitance (i.e., dQmax/dVmax vs Vmax) measurements as a function of temperature in conjunction with ACTFEL device simulation are employed in order to establish that EL thermal quenching arises from a thermally activated annihilation of positive space charge and a corresponding increase in the threshold voltage. © 2000 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
77.22.Jp Dielectric breakdown and space-charge effects

Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

R. A. Mair, J. Y. Lin, H. X. Jiang, E. D. Jones, A. A. Allerman, and S. R. Kurtz

Appl. Phys. Lett. 76, 188 (2000); http://dx.doi.org/10.1063/1.125698 (3 pages) | Cited 78 times

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Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a InxGa1−xAs1−yNy (x ∼ 0.03, y ∼ 0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07–0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, we observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. This behavior is characteristic of a distribution of localized states, which arises from alloy fluctuations. © 2000 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.35.-y Excitons and related phenomena
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Thickness-independent electron field emission from tetrahedral amorphous carbon films

J. P. Zhao, Z. Y. Chen, X. Wang, T. S. Shi, and T. Yano

Appl. Phys. Lett. 76, 191 (2000); http://dx.doi.org/10.1063/1.125699 (3 pages) | Cited 15 times

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Electron field emission properties of tetrahedral amorphous carbon films of different thicknesses have been studied. The experimental results indicate that there exists no close relationship between threshold electric field and film thickness. Different field emission models are used to examine the experimental results in order to explain the thickness-independent electron field emission properties. © 2000 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
61.43.Er Other amorphous solids
68.55.-a Thin film structure and morphology

Self-limiting behavior of scanning-electron-beam-induced local oxidation of hydrogen-passivated silicon surfaces

Y. Y. Wei and Gyula Eres

Appl. Phys. Lett. 76, 194 (2000); http://dx.doi.org/10.1063/1.125700 (3 pages) | Cited 10 times

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The mechanism and the kinetics of electron-beam-induced local oxidation of an H-passivated Si surface in the electron energy range from 10 to 40 keV was investigated using scanning-electron-beam lithography. The volume expansion of Si upon oxidation produces a negative image surface pattern that can be imaged by atomic force microscopy. This latent pattern was used to study the dependence of the height and width of dot and line patterns as a function of the electron-beam exposure parameters. Patterns with minimum linewidth below 50 nm have been obtained. Similarly to atomic-force-microscope-induced local oxidation of Si, the height and linewidth saturate with electron dose for a given accelerating voltage. The saturation height roughly scales with the accelerating voltage, and depends more strongly on the accelerating voltage than the linewidth. The experimental results are interpreted by a mechanism that is based on charge generation and transport through the evolving insulating SiO2 layer. © 2000 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.Mq Oxidation
85.40.Hp Lithography, masks and pattern transfer
81.65.Rv Passivation

High electron mobility in bathophenanthroline

Shigeki Naka, Hiroyuki Okada, Hiroyoshi Onnagawa, and Tetsuo Tsutsui

Appl. Phys. Lett. 76, 197 (2000); http://dx.doi.org/10.1063/1.125701 (3 pages) | Cited 126 times

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We have measured electron mobility in vacuum-deposited films of 4,7-diphenyl-1,10phenanthroline (bathophenanthroline, or BPhen) using a time-of-flight technique. Electron transport was highly dispersive for BPhen with a dispersion parameter of a value 0.30. The electron mobility in excess of 10−4 cm2/V s has been observed at electric fields of the order of 105 V/cm with weakly dependent on the electric field. The characteristic energy of the distribution is obtained a value 0.09 eV. It is directly confirmed that the BPhen has superior electron-transport capability. © 2000 American Institute of Physics.
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72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.40.+w Photoconduction and photovoltaic effects

Influence of interstitial carbon defects on electron transport in strained Si1−yCy layers on Si(001)

H. J. Osten, J. Griesche, P. Gaworzewski, and K. D. Bolze

Appl. Phys. Lett. 76, 200 (2000); http://dx.doi.org/10.1063/1.125702 (3 pages) | Cited 7 times

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We present experimental results on Hall mobilities of electrons in tensile strained Si1−yCy layers with a substitutional carbon yS = 0.4%, but different concentrations of interstitial carbon. Although the lattice distortion due to misfit strain and hence, the band alignment are identical for all investigated samples, we find differences in electron mobility of nearly a factor 2 due to the varying concentration of interstitial carbon. For the highest interstitial C concentration (1×1020 cm−3), it was not even possible to obtain any reliable electrical data. We demonstrate that it is not sufficient to consider only strain in evaluating electrical properties of C containing layers. Specific growth conditions can lead to very different electrical properties due to the different amounts of interstitial C, even for pseudomorphically strained layers with the same lattice mismatch and band alignment. © 2000 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.55.Ht Other nonmetals
61.72.J- Point defects and defect clusters

Near-field photoluminescence imaging of single defects in a ZnSe quantum-well structure at low temperatures

G. von Freymann, D. Lüerßen, C. Rabenstein, M. Mikolaiczyk, H. Richter, H. Kalt, Th. Schimmel, M. Wegener, K. Okhawa, and D. Hommel

Appl. Phys. Lett. 76, 203 (2000); http://dx.doi.org/10.1063/1.125720 (3 pages) | Cited 9 times

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Single bright-spot, bow-tie-shaped defects in a ZnSe heterostructure are spectroscopically imaged with 200 nm spatial resolution at a sample temperature of 20 K. The local thickness variations in the single ZnSe quantum-well lead to a lateral double-well potential resulting in a shift and enhancement of the quantum-well photoluminescence. The luminescence images of the ZnMgSSe barrier material are governed by nonradiative recombination at the four associated Frank partial dislocations. © 2000 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
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