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15 May 2000

Volume 76, Issue 20, pp. 2815-2963

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Dielectric properties of layered perovskite Sr1−xAxBi2Nb2O9 ferroelectrics (A=La, Ca and x = 0,0.1)

M. J. Forbess, S. Seraji, Y. Wu, C. P. Nguyen, and G. Z. Cao

Appl. Phys. Lett. 76, 2934 (2000); http://dx.doi.org/10.1063/1.126521 (3 pages) | Cited 68 times

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In this letter, we report an experimental study on the influences of 10 at. % Ca2+ and La3+ doping on dielectric properties and dc conductivity of SrBi2Nb2O9 ferroelectric ceramics. All the samples were made by two-step solid-state reaction sintering at temperatures up to 1150 °C for 0.5–1 h in air. X-ray diffraction analysis indicated that single-phase layered perovskite ferroelectrics were obtained and no appreciable secondary phase was found. The Curie point was found to increase from 418 °C without doping to 475 °C with Ca2+ doping and to 480 °C with La3+ doping. Dielectric constants, loss tangent, and dc conductivity of SrBi2Nb2O9 ferroelectrics doped with Ca2+ and La3+ were studied and the relationships among doping, crystal structure, and dielectric properties were discussed. © 2000 American Institute of Physics.
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77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.66.Fn Inorganic compounds
77.22.Gm Dielectric loss and relaxation
77.80.B- Phase transitions and Curie point
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Sk Insulators

Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3

J. Lettieri, M. A. Zurbuchen, Y. Jia, D. G. Schlom, S. K. Streiffer, and M. E. Hawley

Appl. Phys. Lett. 76, 2937 (2000); http://dx.doi.org/10.1063/1.126522 (3 pages) | Cited 36 times

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Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm2, and the dielectric loss was 2.5% for a 0.5-μm-thick film. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals

K. Watanabe and T. Tatsumi

Appl. Phys. Lett. 76, 2940 (2000); http://dx.doi.org/10.1063/1.126523 (3 pages) | Cited 8 times

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The formation of oxynitride films less than 2.0 nm by using oxygen and nitrogen radicals produced by an electron cyclotron resonance plasma in an ultrahigh-vacuum system has been studied. We found that the N concentration can be controlled at values up to 15% and that, although the interface roughness tends to increase with increasing N concentration, supplying oxygen and nitrogen radicals simultaneously decreases the roughness of the film and increases its nitrogen concentration (N: 12.1%, root mean square: 0.12 nm). We also could easily control the nitrogen profile in the oxynitride less than 2.0-nm-thick by using different processing sequences. © 2000 American Institute of Physics.
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68.55.Nq Composition and phase identification
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Mq Oxidation
82.30.Cf Atom and radical reactions; chain reactions; molecule-molecule reactions
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
68.35.Ct Interface structure and roughness
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