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15 May 2000

Volume 76, Issue 20, pp. 2815-2963

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The effect of chlorine on dopant activation in hydrogenated amorphous silicon

Adam M. Payne and Sigurd Wagner

Appl. Phys. Lett. 76, 2949 (2000); http://dx.doi.org/10.1063/1.126526 (3 pages) | Cited 2 times

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The dark conductivity of hydrogenated amorphous silicon (a-Si:H) films deposited from dichlorosilane (SiCl2H2) and silane (SiH4), and doped with diborane (B2H6), increases by as much as a factor of 100 over the usual a-Si:H,B films deposited without SiCl2H2. The effect is observed at gas phase concentrations of diborane ranging from 0.006 to 0.5 vol %, and for both direct current (dc) and 13.56 MHz radio frequency plasma depositions, although it is more noticeable for the dc discharge. An increase in dark conductivity is also observed in boron doped hydrogenated amorphous silicon carbon alloys (a-SiC:H) deposited with dichlorosilane, albeit coupled with a change in the Tauc gap. Chlorine reduces the conductivity of undoped and phosphorus doped a-Si:H films. A B–Cl cluster acceptor that is not passivated by H is proposed as a possible mechanism for chlorine enhanced conductivity. This increase in p-layer conductivity translates into an increase of solar cell efficiency, but surprisingly by an increase in photocurrent rather than open circuit voltage. © 2000 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
73.61.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
84.60.Jt Photoelectric conversion
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
73.50.Pz Photoconduction and photovoltaic effects

Probing deep interaction potentials with white-noise-driven atomic force microscope cantilevers

D. O. Koralek, W. F. Heinz, M. D. Antonik, A. Baik, and J. H. Hoh

Appl. Phys. Lett. 76, 2952 (2000); http://dx.doi.org/10.1063/1.126527 (3 pages) | Cited 5 times

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Perturbations to the thermally driven motion of an atomic force microscope (AFM) cantilever can be used to probe tip-sample interactions. One limitation of such thermal-noise-based measurements is that they fail for large attractive interactions with force gradients that exceed the stiffness of the cantilever. In such cases, the AFM tip jumps to the surface and is trapped there for long periods of time. Here, we describe an approach to overcome this limitation by driving the AFM cantilever with white noise, essentially simulating high temperatures. Effective temperatures of several thousand Kelvin are easily obtained. We show that this approach allows the AFM tip to “thermally” sample interactions that would otherwise capture the tip. © 2000 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Theory of electrostatic probe microscopy: A simple perturbative approach

S. Gómez-Moñivas, J. J. Sáenz, R. Carminati, and J. J. Greffet

Appl. Phys. Lett. 76, 2955 (2000); http://dx.doi.org/10.1063/1.126528 (3 pages) | Cited 33 times

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A theoretical approach to electrostatic scanning probe microscopy is presented. We show that a simple perturbation formula, originally derived in the context of scattering theory of electromagnetic waves, can be used to obtain the capacitance and the electrostatic force between a metallic tip and an inhomogeneous dielectric sample. For inhomogeneous thin dielectric films, the scanning probe signal is shown to be proportional to the convolution between an effective surface profile and a response function of the microscope. This provides a rigorous framework to address the resolution issue and the inverse problem. © 2000 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
41.20.Cv Electrostatics; Poisson and Laplace equations, boundary-value problems

Enhanced ballistic phonon production for surface events in cryogenic silicon detector

R. M. Clarke, P. L. Brink, B. Cabrera, P. Colling, M. B. Crisler, A. K. Davies, S. Eichblatt, R. J. Gaitskell, J. Hellmig, J. M. Martinis, S. W. Nam, T. Saab, and B. A. Young

Appl. Phys. Lett. 76, 2958 (2000); http://dx.doi.org/10.1063/1.126529 (3 pages) | Cited 9 times

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We present evidence of an enhanced ballistic phonon component resulting from surface events in a 100 g silicon cryogenic dark matter detector. Surface events, calibrated using a 14C electron source, were found to have faster rise times (∼5 μs) than bulk gamma and neutron events (∼7 μs). Using this effect, we were able to discriminate bulk nuclear recoil events from a surface electron background at better than the 97% level above 25 keV recoil energy. The phonon risetime for bulk gamma events was dependent on the applied voltage, confirming that phonons produced from electron-hole emission are ballistic. © 2000 American Institute of Physics.
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63.20.-e Phonons in crystal lattices
95.35.+d Dark matter (stellar, interstellar, galactic, and cosmological)
29.40.Wk Solid-state detectors

Field emission study of diamond-like carbon films with scanned-probe field-emission force microscopy

Takahito Inoue, D. Frank Ogletree, and Miquel Salmeron

Appl. Phys. Lett. 76, 2961 (2000); http://dx.doi.org/10.1063/1.126530 (3 pages) | Cited 12 times

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Using a tip as an anode, a scanning force microscope (SFM) with an electrically conducting tip allows simultaneous measurement of both field-emitted currents and surface electronic properties with high lateral resolution. The principle of the method and its application to field emission from chemical vapor deposition diamond-like carbon films are presented. By simultaneously imaging the topography and field-emission current distribution with a 100 nm tip-surface separation, we correlated emission, topography, and dielectric properties. Subsequent contact SFM images of the same regions correlated topography and conductivity on the nanometer scale. The electrostatic force between tip and surface showed fluctuations on a millisecond time scale during field emission. This is probably due to charging and discharging of deep traps in the diamond-like carbon film. © 2000 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
79.70.+q Field emission, ionization, evaporation, and desorption
73.25.+i Surface conductivity and carrier phenomena
73.20.At Surface states, band structure, electron density of states
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