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29 May 2000

Volume 76, Issue 22, pp. 3161-3321

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Improvement of quantum efficiency in polymer light-emitting diodes by a single-ion conductor

Tae-Woo Lee and O. Ok Park

Appl. Phys. Lett. 76, 3161 (2000); http://dx.doi.org/10.1063/1.126616 (3 pages) | Cited 15 times

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Polymer light-emitting diodes were fabricated using poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] as an emissive material. Sodium ionic polyurethane (NaPU), a single-ion conductor (SIC), was employed as an electron-injecting material and compared with the case of sodium sulfonated polystyrene (SSPS). The quantum efficiency was greatly enhanced, compared with the SSPS-based device. The electron injection in the NaPU-based device is more favorable, compared with the SSPS-based device because of a larger ionic space charge accumulation near the cathode by the good chain segmental motion of the soft block in the polymer chains of the SIC. Thus, a balanced injection of an electron–hole pair can be achieved to greatly improve the quantum efficiency. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
66.30.H- Self-diffusion and ionic conduction in nonmetals
78.66.Qn Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
42.70.Jk Polymers and organics

Mid-infrared angled-grating distributed feedback laser

R. E. Bartolo, W. W. Bewley, I. Vurgaftman, C. L. Felix, J. R. Meyer, and M. J. Yang

Appl. Phys. Lett. 76, 3164 (2000); http://dx.doi.org/10.1063/1.126617 (3 pages) | Cited 18 times

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We report near-diffraction-limited output from an angled-grating distributed feedback type-II W laser emitting near 3.4 μm. For pulsed optical pumping of a 50-μm-wide stripe at 78 K, the far-field beam divergence angle was only 1.4°. The slope efficiency was 64% of that for a conventional Fabry–Pérot laser on the same bar. However, the spectral linewidth decreased by only a factor of 2. The beam quality was substantially better than that for the Fabry–Pérot laser out to stripe widths of at least 800 μm. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Dj Gratings
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Low-threshold interband cascade lasers with power efficiency exceeding 9%

J. D. Bruno, J. L. Bradshaw, Rui Q. Yang, J. T. Pham, and D. E. Wortman

Appl. Phys. Lett. 76, 3167 (2000); http://dx.doi.org/10.1063/1.126618 (3 pages) | Cited 12 times

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Midinfrared (3.6–3.8 μm) interband cascade lasers based on InAs/GaInSb type-II quantum wells have been demonstrated in the continuous-wave (cw) mode with low-threshold current densities (e.g., ∼56 A/cm2 at 80 K) and power efficiencies exceeding 9%. At a relatively low current of 0.4 A, we observed ∼100 mW/facet of optical power out at 80 K (124 mW at 60 K) from lasers mounted epilayer-side up with uncoated facets. These lasers were able to operate in the cw mode at temperatures up to 127 K. Also, in the pulsed mode, devices lased at temperatures up to 250 K and displayed, at 80 K, a peak power efficiency exceeding 11%. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Wavelength switching by positively detuned side-mode injection in semiconductor lasers

Y. Hong, K. A. Shore, J. S. Lawrence, and D. M. Kane

Appl. Phys. Lett. 76, 3170 (2000); http://dx.doi.org/10.1063/1.126619 (3 pages) | Cited 4 times

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The experimental observation of a side-mode resonance regime in intermodal injection of a Fabry–Pérot semiconductor laser is reported. It is shown that wavelength switching can be easily affected by the use of positively detuned side-mode injection. Nearly degenerate four-wave mixing is observed in both positive and negative detuning regimes. © 2000 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

All-optical wavelength converter and switch based on electromagnetically induced transparency

H. Schmidt and R. J. Ram

Appl. Phys. Lett. 76, 3173 (2000); http://dx.doi.org/10.1063/1.126620 (3 pages) | Cited 54 times

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We propose a method for all-optical switching and wavelength conversion using electromagnetically induced transparency (EIT). We discuss the mechanism for the transfer of information in this scheme and determine the conditions for which N×N wavelength conversion can be realized. We compare the properties and limits of an EIT-based switch to conventional wavelength converters. © 2000 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Picosecond dynamics of terahertz-sideband generation in far-infrared illuminated quantum wells

D. S. Citrin

Appl. Phys. Lett. 76, 3176 (2000); http://dx.doi.org/10.1063/1.126621 (3 pages) | Cited 12 times

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Optical excitation of a quantum well illuminated by a strong far-infrared (FIR) field is known to give rise to sidebands on the optical spectra separated from the fundamental by multiples of twice the FIR frequency Ω. In this study, we consider the picosecond dynamics of terahertz (THz) sideband formation using picosecond optical excitation pulses. We find that the emission at the THz sidebands largely tracks the temporal evolution of the excitation pulse. Applications to wavelength-division multiplexing are discussed. © 2000 American Institute of Physics.
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78.70.Gq Microwave and radio-frequency interactions
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Nv Optical frequency converters
84.40.-x Radiowave and microwave (including millimeter wave) technology

Spontaneous emission model of lateral light extraction from heterostructure light-emitting diodes

D. Ochoa, R. Houdré, R. P. Stanley, M. Ilegems, H. Benisty, C. Hanke, and B. Borchert

Appl. Phys. Lett. 76, 3179 (2000); http://dx.doi.org/10.1063/1.126622 (3 pages) | Cited 6 times

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We investigate the extraction of light from semiconductor light-emitting diodes made of dielectric multilayer stacks with quantum-well sources. The model is a combination of a rigorous vertical model of dipole emission and an in-plane ray-tracing model. The vertical model is shown to conveniently provide the relevant horizontal decay length of the various kinds of in-plane propagating modes. The proposed combination of the two models accounts for the lateral extraction as well as light recycling in the active layers. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.-w Optical properties of specific thin films
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

High-gain, reflection-double pass, Ti:sapphire continuous-wave amplifier delivering 5.77 W average power, 82 MHz repetition rate, femtosecond pulses

Zhenlin Liu, Hidetoshi Murakami, Toshimasa Kozeki, Hideyuki Ohtake, and Nobuhiko Sarukura

Appl. Phys. Lett. 76, 3182 (2000); http://dx.doi.org/10.1063/1.126639 (3 pages) | Cited 5 times

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A confocal, reflection-double-pass, Ti:sapphire continuous-wave (cw) amplifier with a small signal gain of 4.2 has been invented. Femtosecond pulses with an 82 MHz repetition rate from a mode-locked Ti:sapphire laser are amplified to 5.77 W average power with a slightly saturated gain of 3.7 through an amplifier pumped by three cw green lasers, and the extraction efficiency reaches 10.6%. © 2000 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern

H. L. Kung, D. A. B. Miller, P. Atanackovic, C. C. Lin, J. S. Harris, L. Carraresi, J. E. Cunningham, and W. Y. Jan

Appl. Phys. Lett. 76, 3185 (2000); http://dx.doi.org/10.1063/1.126623 (3 pages) | Cited 5 times

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We demonstrate a wavelength monitor and a two-wavelength detector based on two single-quantum-well absorbers that sample a standing wave created by a distributed Bragg reflector. As a wavelength monitor, our device is power independent over a 15 dB range. Wavelength discrimination is linear over a 12 nm range. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate

Y. Chen, G. H. Li, Z. M. Zhu, H. X. Han, Z. P. Wang, W. Zhou, and Z. G. Wang

Appl. Phys. Lett. 76, 3188 (2000); http://dx.doi.org/10.1063/1.126624 (3 pages) | Cited 8 times

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We investigated the photoluminescence (PL) of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots (QDs) grown on (311)A GaAs substrate. The PL peak at 10 K shifts to lower energy by about 30 meV when the excitation power decreases by two orders of magnitude. It has a red-shift under pressure, that is the character of X-like transition. Moreover, its peak energy is smaller than the indirect gap of bulk Al0.5Ga0.5As and In0.55Al0.45As. We then attribute that peak to the type-II transition between electrons in X valley of Al0.5Ga0.5As and heavy holes in In0.55Al0.45As QDs. A new peak appears at the higher energy when temperature is increased above 70 K. It shifts to higher energy with increasing pressure, corresponding to the transition from conduction Γ band to valence band in QDs. The measurements demonstrate that our In0.55Al0.45As/Al0.5Ga0.5As quantum dots are type-II QDs with X-like conduction-band minimum. To interpret the second X-related peak emerged under pressure, we discuss the X-valley split in QDs briefly. © 2000 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz

R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer

Appl. Phys. Lett. 76, 3191 (2000); http://dx.doi.org/10.1063/1.126625 (3 pages) | Cited 109 times

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Bandwidth-limited infrared pulses as short as 50 fs are generated in thin GaSe crystals by phase-matched optical rectification of 10 fs laser pulses. The central frequency of the transients is continuously tunable over a wide interval extending from 41 THz (λ = 7 μm) to the far-infrared. The electric field of the THz transients is directly monitored via ultrabroadband free-space electro-optic sampling. A simulation of the spectra based on a plane-wave model shows excellent agreement with the experiment. © 2000 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
42.72.Ai Infrared sources
42.60.Fc Modulation, tuning, and mode locking
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
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Oxidation resistance of protective coatings studied by spectroscopic ellipsometry

P. Hones, C. Zakri, P. E. Schmid, F. Lévy, and O. R. Shojaei

Appl. Phys. Lett. 76, 3194 (2000); http://dx.doi.org/10.1063/1.126626 (3 pages) | Cited 18 times

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Spectroscopic ellipsometry is applied to determine the oxidation resistance of TiN and CrN coatings. This technique proves to provide accurate measurements of the oxide layer thickness in a convenient, fast, and nondestructive manner. The magnetron-sputtered thin films were heated in air in the temperature range between 673 and 925 K. The verification with scanning electron microscopy and x-ray reflectometry shows an excellent agreement between these complementary techniques. The rate constant k of the oxidation is directly related to the film morphology in TiN thin films. While understoichiometric films with a dense fine-grained structure exhibit a moderate k of 4 nm2/s at 773 K, overstoichiometric films with a pronounced columnar structure oxidized over seven times faster. The nonstoichiometry in TiNy and CrNy leads to a reduced activation energy for oxidation compared to stoichiometric compounds. © 2000 American Institute of Physics.
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81.65.Mq Oxidation
68.55.-a Thin film structure and morphology
61.66.Bi Elemental solids
61.66.Dk Alloys
61.05.cm X-ray reflectometry (surfaces, interfaces, films)
81.15.Cd Deposition by sputtering
81.65.Kn Corrosion protection

Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

Y. F. Chong, K. L. Pey, A. T. S. Wee, A. See, L. Chan, Y. F. Lu, W. D. Song, and L. H. Chua

Appl. Phys. Lett. 76, 3197 (2000); http://dx.doi.org/10.1063/1.126627 (3 pages) | Cited 34 times

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Ultrashallow p+/n junctions formed by B+-ion implantation and annealed by spike rapid thermal annealing (RTA) or laser annealing were studied. The effect of the preamorphizing depth on the redistribution of boron atoms after annealing has also been investigated. Our results show that for ultrashallow junctions formed by ultra-low-energy ion implantation and spike RTA, the depth of the preamorphizing implant has very little impact on the junction depth. By optimizing the laser fluence and preamorphization depth, a highly activated, ultrashallow, and abrupt junction can be obtained using a 248 nm excimer laser. The secondary-ion-mass spectrometry results clearly indicate that a step-like profile with a junction depth of 370 Å (for a B+ implant at 1 keV) can be formed with a single-pulse laser irradiation at 0.5 J/cm2. © 2000 American Institute of Physics.
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85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
61.43.Dq Amorphous semiconductors, metals, and alloys
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Organic probe for inhomogeneous band bending

S. Park, T. U. Kampen, D. R. T. Zahn, and W. Braun

Appl. Phys. Lett. 76, 3200 (2000); http://dx.doi.org/10.1063/1.126628 (3 pages) | Cited 6 times

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The initial stage of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) adsorption on Se-passivated n-type GaAs(100)-(2×1) surface was investigated using high-resolution soft x-ray photoemission spectroscopy. A very small amount of PTCDA (≪1 ML) is sufficient to induce a reduction of inhomogeneous band bending at the surface as judged from the sharpening of the core level spectra. This is interpreted in terms of preferential sticking of the organic molecules to surface defects. The results presented in this letter indicate that organic molecules may also serve as very suitable probes for inorganic semiconductor surface evaluation through the photoemission studies. © 2000 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
79.60.Dp Adsorbed layers and thin films

Resistless pattern definition and Si selective-area deposition using an ultrathin SiO2 mask layer treated by SiHCl3

T. Yasuda, M. Nishizawa, and S. Yamasaki

Appl. Phys. Lett. 76, 3203 (2000); http://dx.doi.org/10.1063/1.126629 (3 pages) | Cited 5 times

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We report a selective-area deposition process using an ultrathin SiO2 mask on which SiHCl3 is chemisorbed. The key step of this process is resistless pattern definition utilizing electron-stimulated desorption (ESD) of Cl and Cl-containing groups from the mask surface. Compared to the previous report utilizing ESD of O from SiO2, sensitivity to the incident electron beam has been improved by a factor exceeding 104. Selective-area deposition of Si on the Cl-desorbed regions is demonstrated using an Si2H6 source gas. © 2000 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
79.20.La Photon- and electron-stimulated desorption
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Implanted argon atoms as sensing probes of residual stress in ultrathin films

W. Lu and K. Komvopoulos

Appl. Phys. Lett. 76, 3206 (2000); http://dx.doi.org/10.1063/1.126630 (3 pages) | Cited 14 times

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A technique for evaluating residual stresses in ultrathin films is presented and its effectiveness is demonstrated in light of residual stress measurements obtained for amorphous carbon (a-C) films of thickness 10–70 nm deposited on Si(100) substrates by radio-frequency sputtering. In this technique, small amounts of Ar atoms implanted within the near-surface region of the films are used as stress-sensing probes. The method is based on the effect of the film residual stress on the binding energy shift of the 2p electrons of implanted (or incorporated) Ar atoms determined from x-ray photoelectron spectroscopy. The basic requirements of this technique are discussed and its potential to determine residual stresses in ultrathin films is illustrated in light of comparisons with results obtained with a conventional stress measurement technique and annealing experiments performed with a-C films. The residual stress in the as-deposited a-C films, sensed by the incorporated Ar atoms, is confirmed by stress measurements based on the change of the sample curvature. In addition, the residual stress in a-C films leading to debonding after annealing, predicted by the present method, is shown to be in good agreement with that calculated from a blistering model for thin films under equibiaxial compression. © 2000 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.43.Dq Amorphous semiconductors, metals, and alloys
07.10.Lw Balance systems, tensile machines, etc.
79.60.Dp Adsorbed layers and thin films

Ultraviolet photoluminescence of porous silica

N. Chiodini, F. Meinardi, F. Morazzoni, A. Paleari, R. Scotti, and D. Di Martino

Appl. Phys. Lett. 76, 3209 (2000); http://dx.doi.org/10.1063/1.126631 (3 pages) | Cited 26 times

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Excitation pattern and decay kinetics of ultraviolet photoluminescence of porous silica are investigated between 4.5 and 10 eV by means of synchrotron radiation. Spectra are dominated by a 3.7 eV emission similar to the recently observed ultraviolet emission of oxidized porous Si and Si nanostructures. Emission intensity is found to be controlled by the material specific surface. Other emissions are observed at 2.9, 3.8, and 4.2 eV. All emissions show lifetimes of a few nanoseconds. Spectral and kinetic features are sensibly different than in glassy SiO2, suggesting a revision of previous assignments of ultraviolet emissions in oxidized porous Si and Si nanostructures. © 2000 American Institute of Physics.
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78.55.Mb Porous materials
61.43.Gt Powders, porous materials
71.55.Jv Disordered structures; amorphous and glassy solids

Selective growth of InGaN quantum dot structures and their microphotoluminescence at room temperature

Koichi Tachibana, Takao Someya, Satomi Ishida, and Yasuhiko Arakawa

Appl. Phys. Lett. 76, 3212 (2000); http://dx.doi.org/10.1063/1.126632 (3 pages) | Cited 52 times

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We have fabricated InGaN quantum dot (QD) structures on hexagonal pyramids of GaN, using metalorganic chemical vapor deposition with selective growth. Intense photoluminescence was observed from the sample at room temperature. To directly observe the emitting areas, microphotoluminescence intensity images with a spatial resolution of a few hundred nanometers were used. The images show the emission was only from the tops of the hexagonal pyramids. The width of the emitting areas is about 300 nm, which is comparable to the spatial resolution of the images. Such a narrow width of emission areas indicates that InGaN QDs are formed on the tops of pyramids. © 2000 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors

Nanoscale pattern formation in Pt thin films due to ion-beam-induced dewetting

Xiaoyuan Hu, David G. Cahill, and Robert S. Averback

Appl. Phys. Lett. 76, 3215 (2000); http://dx.doi.org/10.1063/1.126633 (3 pages) | Cited 34 times

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Atomic force microscopy is used to characterize the evolution of film morphology produced by heavy-ion bombardment. Pt films, 3 and 5 nm thick, are deposited on SiO2 substrates and subsequently bombarded by 800 keV Kr+. Ion doses of >2×1014 initiate pattern formation and the dewetting of Pt films from the substrate. The film morphology becomes increasingly disconnected with increasing dose; at the highest doses, ( ∼ 2×1016 cm−2), isolated nanoparticles are formed with a uniform spacing. The results are explained by the nucleation of bare substrate patches and subsequent coarsening of the morphology by the molten zones created by individual Kr+ impacts. © 2000 American Institute of Physics.
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61.82.Bg Metals and alloys
81.65.Cf Surface cleaning, etching, patterning
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
61.80.Jh Ion radiation effects

Ordering and orientation of CoPt/SiO2 granular films with additive Ag

Chen Chen, Osamu Kitakami, Satoshi Okamoto, and Yutaka Shimada

Appl. Phys. Lett. 76, 3218 (2000); http://dx.doi.org/10.1063/1.126634 (3 pages) | Cited 40 times

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We have studied the chemical ordering of granular films (CoPt)1−xAgx/SiO2 with the concentration x = 2–6 at. %. It was found that the additive Ag efficiently promotes the ordering process, reducing the ordering temperature by 100 °C compared with that of without Ag. The additive Ag also stimulates nearly perfect (001) orientation of the CoPt-ordered grains in the films with a thickness of less than 50 nm, resulting in a large perpendicular magnetic anisotropy. © 2000 American Institute of Physics.
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68.55.-a Thin film structure and morphology
75.30.Gw Magnetic anisotropy
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Ss Magnetic recording materials

Dielectric constant measurement of thin films by differential time-domain spectroscopy

Zhiping Jiang, Ming Li, and X.-C. Zhang

Appl. Phys. Lett. 76, 3221 (2000); http://dx.doi.org/10.1063/1.126587 (3 pages) | Cited 37 times

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We present a theoretical model and preliminary experimental results on the dielectric constant measurement of thin films by using differential time-domain spectroscopy. This technique greatly reduces the minimum measurable thickness, and it promises the dielectric constant measurement of μm-thick thin films with the frequency range from GHz to THz. © 2000 American Institute of Physics.
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77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films

Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

H. Y. Huang, C. K. Shu, W. C. Lin, C. H. Chuang, M. C. Lee, W. K. Chen, and Y. Y. Lee

Appl. Phys. Lett. 76, 3224 (2000); http://dx.doi.org/10.1063/1.126588 (3 pages) | Cited 3 times

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Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of the donor-bound-exciton transition of undoped GaN exhibits a strong dependence on temperature. When In is doped into the film, the recombination lifetime decreases sharply from 68 to 30 ps, regardless of the measured temperature and In source flow rate. These observations might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process. © 2000 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
71.35.Gg Exciton-mediated interactions

Optical properties of self-assembled thin-film of poly(p-phenylene vinylene)s and its application to light-emitting devices with microring geometry

T. Sonoda, T. Fujisawa, A. Fujii, and K. Yoshino

Appl. Phys. Lett. 76, 3227 (2000); http://dx.doi.org/10.1063/1.126589 (3 pages) | Cited 4 times

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Periodic multilayer structures of poly(p-phenylene vinylene)s have been fabricated by a self-assembly method on flat surfaces and round surfaces of optical fibers. Alternating multilayers consisting of poly{1,4-[2-(5-carboxypentyloxy)-5-methoxyphenylene]vinylene} (CPMOPPV) and poly(p-phenylene vinylene) (PPV) were adsorbed onto the positively charged substrates. The optical properties of the periodic multilayer structures of CPMOPPV/PPV have been studied. Periodic multilayers with microring geometry have also been fabricated around the quartz fibers. Their optical properties have been studied, and yellow electroluminescence from a light-emitting device with microring geometry has been observed. © 2000 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
42.70.Jk Polymers and organics
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
42.70.Hj Laser materials
78.40.Me Organic compounds and polymers
78.55.Kz Solid organic materials

Dynamic strength of aluminum single crystals at melting

G. I. Kanel, K. Baumung, J. Singer, and S. V. Razorenov

Appl. Phys. Lett. 76, 3230 (2000); http://dx.doi.org/10.1063/1.126590 (3 pages) | Cited 1 time

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Results of measurements of dynamic tensile strength (“spall strength”) of aluminum single crystals are presented. In the shock-wave experiments the load duration was about 40 ns, the initial temperature was varied from 20 to 648 °C that is only 12 °C less than the melting temperature of aluminum. Under these conditions the dynamic tensile strength of aluminum single crystals has been found practically independent on the temperature up to ∼630 °C. The spall strength slightly decreases at further increase in the initial temperature up to 648 °C. The high-temperature data exceed estimated stresses at which melting should start in a stretched material. © 2000 American Institute of Physics.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
64.70.D- Solid-liquid transitions
62.50.-p High-pressure effects in solids and liquids

Surface relief gratings from electrostatically layered azo dye films

Jin-An He, Shaoping Bian, Lian Li, Jayant Kumar, Sukant K. Tripathy, and Lynne A. Samuelson

Appl. Phys. Lett. 76, 3233 (2000); http://dx.doi.org/10.1063/1.126591 (3 pages) | Cited 12 times

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Surface relief gratings (SRGs) were fabricated on composite films assembled by alternate electrostatic deposition of a polyelectrolyte, poly(dimethyldiallylammonium chloride), and an organic azo dye, congo red. The modulation of SRGs was found to increase with the thickness of the matrix films. Significant photochemical bleaching of the azo dye in the polymeric microenvironment as well as gradient-force-induced migration of the small azo dye contributes to the formation of the SRG structure. This finding demonstrates a facile method to fabricate SRGs for optical and information storage applications using commercially available azo dyes and polyelectrolytes. © 2000 American Institute of Physics.
Show PACS
42.40.Eq Holographic optical elements; holographic gratings
42.70.Jk Polymers and organics
42.70.Ln Holographic recording materials; optical storage media
42.79.Vb Optical storage systems, optical disks
82.50.-m Photochemistry
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
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