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5 Jun 2000

Volume 76, Issue 23, pp. 3337-3483

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Ferroelectricity and electronic defect characteristics of c-oriented Sr0.25Ba0.75Nb2O6 thin films deposited on Si substrates

Y. S. Yang, M. K. Ryu, H. J. Joo, S. H. Lee, S. J. Lee, K. Y. Kang, and M. S. Jang

Appl. Phys. Lett. 76, 3472 (2000); http://dx.doi.org/10.1063/1.126681 (3 pages) | Cited 15 times

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Sr0.25Ba0.75Nb2O6 (SBN) thin films postannealed at 750 °C for 30 min were epitaxially grown in the [00l] direction on p-type (100) Si substrates by the rf magnetron sputtering method. The capacitance–voltage (C–V) characteristics of Au/SBN/Si capacitors, which depend on postannealing conditions, were measured. The C–V curve of the crystalline SBN film had a hysteresis curve with a clockwise rotation. The memory window and surface charge density calculated from the hysteresis loop are 2.1 V and 85 nC/cm2, respectively. From the data of a deep level transient spectroscopy, the activation energies of major traps in the crystalline SBN film obtained were about Ev+0.26 eV and Ev+0.28 eV, by using the Arrhenius plot. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
71.55.Ht Other nonmetals
77.80.Dj Domain structure; hysteresis
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Cd Deposition by sputtering
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.Cc Kinetics of defect formation and annealing
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
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