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5 Jun 2000

Volume 76, Issue 23, pp. 3337-3483

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Three-dimensional photonic band gap structure of a polymer-metal composite

Ji Zhou, Y. Zhou, S. L. Ng, H. X. Zhang, W. X. Que, Y. L. Lam, Y. C. Chan, and C. H. Kam

Appl. Phys. Lett. 76, 3337 (2000); http://dx.doi.org/10.1063/1.126641 (3 pages) | Cited 16 times

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A three-dimensional photonic band gap structure based on self-assembled crystals of polystyrene microspheres was fabricated by filling the pores with metallic silver. An almost complete stop band at 580–600 nm is observed in the optical transmission spectra. In comparison with pure polystyrene colloid crystals, the absorption band of Bragg diffraction in the composite was much more intense and broader, due to an enlargement of the contrast between the spheres and the background. A shift to shorter wavelengths in the band occurred because of a decrease in the average refractive index. © 2000 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.66.Sq Composite materials
42.70.Jk Polymers and organics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Improved temperature performance of Al0.33Ga0.67As/GaAs quantum-cascade lasers with emission wavelength at λ ≈ 11 μm

P. Kruck, H. Page, C. Sirtori, S. Barbieri, M. Stellmacher, and J. Nagle

Appl. Phys. Lett. 76, 3340 (2000); http://dx.doi.org/10.1063/1.126686 (3 pages) | Cited 33 times

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The pulsed operation of a GaAs/AlGaAs quantum-cascade laser is reported up to 258 K. These devices emit at 11.3 μm and are based on a plasmon-confinement waveguide. To optimize the material gain, the active region is designed to diminish electron escape to continuum states. Gain and threshold measurement show evidence of better carrier confinement and improved thermal behavior compared to λ ≈ 9 μm GaAs quantum-cascade lasers. The maximum peak-collected power at 77 K is 520 mW per facet and still 27 mW at 258 K. The temperature dependence of the threshold current density is characterized by a T0 = 128 K. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors

Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots

Y. M. Manz, O. G. Schmidt, and K. Eberl

Appl. Phys. Lett. 76, 3343 (2000); http://dx.doi.org/10.1063/1.126642 (3 pages) | Cited 14 times

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We report room-temperature injection lasing of self-assembled InP/GaInP quantum dots. Stimulated emission occurs via the ground state at λ = 728 nm for cavities as short as 0.5 mm. Threshold current densities of 2.3 kA/cm2 and external differential quantum efficiencies of 8.5% have been measured for 2 mm long devices. Light output power as high as 250 mW without saturation effects can be reached in pulsed excitation. Analysis of temperature-dependent laser emission indicates the thermal coupling of charge carriers in different quantum dots at higher temperatures. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Double fitting of Maker fringes to characterize near-surface and bulk second-order nonlinearities in poled silica

Mingxin Qiu, Ramon Vilaseca, Muriel Botey, Jordi Sellarès, Francesc Pi, and Gaspar Orriols

Appl. Phys. Lett. 76, 3346 (2000); http://dx.doi.org/10.1063/1.126643 (3 pages) | Cited 6 times

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An experimental analysis of the distribution and thickness of the bulk nonlinearity induced in poled silica is reported. The second-order susceptibility decreases exponentially from the anodic interface. Maker fringe patterns showing a double structure are interpreted in relation to the presence of two nonlinear profiles, one concentrated near the anodic surface and another extending into the bulk of the sample. The Maker fringe theory is properly generalized and a double fitting technique reproducing well the experimental results is used to characterize the induced nonlinearities. The dependence of the second-harmonic signal on the poling temperature is given, which is different from that of sol-gel silica. © 2000 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz

High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

Kohki Mukai, Yoshiaki Nakata, Koji Otsubo, Mitsuru Sugawara, Naoki Yokoyama, and Hiroshi Ishikawa

Appl. Phys. Lett. 76, 3349 (2000); http://dx.doi.org/10.1063/1.126644 (3 pages) | Cited 34 times

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This letter reports on the high characteristic temperature of InGaAs/GaAs quantum-dot lasers at room temperature. Self-assembled quantum dots were grown using low-growth-rate molecularbeam epitaxy, and continuous-wave lasing occurred at the dot ground level of 1.26 μm at 25 °C. The characteristic temperature of the threshold currents was 120 K, and ground-level lasing was observed up to 100 °C. Comparing the lasing performances and the spontaneous emission spectra with those of 1.3 μm emission dots, we found that the large volume density, deep potential, and high quantum efficiency were key points for improving the temperature characteristics. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Thermally induced local gain suppression in vertical-cavity surface-emitting lasers

C. Degen, I. Fischer, and W. Elsäßer

Appl. Phys. Lett. 76, 3352 (2000); http://dx.doi.org/10.1063/1.126645 (3 pages) | Cited 14 times

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Joule heating is one of the dominant mechanisms determining the transverse mode formation in vertical-cavity surface-emitting lasers at high injection currents. We give experimental evidence that in this operation regime, strong heating results in local gain suppression in the center of the laser, which overbalances the confining effect of thermal lensing, and thus favors the formation of high order modes. From our investigations of small aperture devices, we conclude that efficient heat removal is crucial for achieving single mode emission at high injection currents. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser

Sanjay Krishna, Omar Qasaimeh, Pallab Bhattacharya, Patrick J. McCann, and Khosrow Namjou

Appl. Phys. Lett. 76, 3355 (2000); http://dx.doi.org/10.1063/1.126646 (3 pages) | Cited 19 times

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Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (∼1 μm) interband laser. The far-infrared signal, centered at 12 μm, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
42.72.Ai Infrared sources

Image amplification and novelty filtering with a photorefractive polymer

Arosha Goonesekera, Daniel Wright, and W. E. Moerner

Appl. Phys. Lett. 76, 3358 (2000); http://dx.doi.org/10.1063/1.126647 (3 pages) | Cited 26 times

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Energy transfer between two laser beams writing a volume hologram in a photorefractive polymer composite is applied to video-rate optical processing applications. A net increase in image intensity as high as a factor of 37 can be observed within one video frame time (33 ms) using a total beam intensity of 1 W cm−2 and 77 V μm−1 applied electric field. Moving object detection (novelty filtering) is also demonstrated. © 2000 American Institute of Physics.
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42.40.My Applications
42.70.Jk Polymers and organics
42.30.Sy Pattern recognition
42.70.Ln Holographic recording materials; optical storage media
42.40.Pa Volume holograms

Strained InGaAs/AlGaAs/GaAs-quantum cascade lasers

S. Gianordoli, W. Schrenk, L. Hvozdara, N. Finger, G. Strasser, and E. Gornik

Appl. Phys. Lett. 76, 3361 (2000); http://dx.doi.org/10.1063/1.126648 (3 pages) | Cited 16 times

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We report on the realization of a quantum cascade laser based on strained In0.04Ga0.96As/Al0.33Ga0.67As/GaAs grown on GaAs substrate using molecular beam epitaxy. Lasing at 10.40 μm and at 9.45 μm was achieved with a good temperature performance showing a T0,2 = 112 K between 125 and 200 K and a maximum working temperature exceeding T = 200 K. Between 78 and 130 K a considerably higher T0,1 of 291 K is found. The decreasing T0 with higher temperatures is due to misalignment of the injector with the upper laser level at elevated temperatures, thermal activation of tunneling of carriers above 130 K, and increasing carrier leakage from the injector into the continuum. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Power dependence of the injection lock band of angled-grating distributed feedback lasers

D. J. Gallant

Appl. Phys. Lett. 76, 3364 (2000); http://dx.doi.org/10.1063/1.126649 (3 pages) | Cited 2 times

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Experimental measurements of the injection lock band of an angled-grating distributed feedback laser have been performed systematically as a function of the unlocked slave laser power. Fringe visibility measurements were used to ascertain the quality of the lock between the master and slave laser as a function of master coupling level and frequency detuning. Experimental data show increasing spectral instabilities under optical injection as the slave laser power is increased, resulting in the stable portion of the lock band decreasing in width. © 2000 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Propagation of femtosecond optical pulses through uncoated and metal-coated near-field fiber probes

Roland Müller and Christoph Lienau

Appl. Phys. Lett. 76, 3367 (2000); http://dx.doi.org/10.1063/1.126650 (3 pages) | Cited 15 times

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The spatiotemporal evolution of a 10-femtosecond light pulse (λ=805 nm) propagating through uncoated and metal-coated near-field fiber probes is analyzed theoretically within a two-dimensional model for s and p polarization of the incident field. Internal reflection inside uncoated fiber probes (cone angle of 28°) results in an efficient guiding towards the fiber tip and a diffraction-limited spatial resolution of about 260 nm≈λ/3 in case of s polarization. While the transmission through uncoated fiber probes has negligible effects on the temporal and spectral pulse profile, strong modifications are observed for metal-coated aperture probes. The wavelength-dependent aperture transmission gives rise to a pronounced blueshift and spectral narrowing of the transmitted pulses. © 2000 American Institute of Physics.
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42.81.Pa Sensors, gyros
42.81.Dp Propagation, scattering, and losses; solitons
07.60.Vg Fiber-optic instruments
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.81.Gs Birefringence, polarization
07.79.Fc Near-field scanning optical microscopes
02.70.Bf Finite-difference methods
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