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26 Jun 2000

Volume 76, Issue 26, pp. 3849-4013

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Comment on “Photoconductivity mechanism of quantum well infrared photodetectors under localized photoexcitation” [Appl. Phys. Lett. 73, 3432 (1998)]

M. Ryzhii and I. Khmyrova

Appl. Phys. Lett. 76, 4010 (2000); http://dx.doi.org/10.1063/1.126850 (2 pages) | Cited 2 times

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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
73.50.Dn Low-field transport and mobility; piezoresistance
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Response to “Comment on ‘Photoconductivity mechanism of quantum well infrared photodetectors under localized photoexcitation’ ” [Appl. Phys. Lett. 76, 4010 (2000)]

M. Ershov

Appl. Phys. Lett. 76, 4012 (2000); http://dx.doi.org/10.1063/1.126853 (1 page)

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Abstract Unavailable
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.40.+w Photoconduction and photovoltaic effects
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