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26 Jun 2000

Volume 76, Issue 26, pp. 3849-4013

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High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

G. Höck, E. Kohn, C. Rosenblad, H. von Känel, H.-J. Herzog, and U. König

Appl. Phys. Lett. 76, 3920 (2000); http://dx.doi.org/10.1063/1.126821 (3 pages) | Cited 37 times

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We report on effective hole mobility in SiGe-based metal–oxide–semiconductor (MOS) field-effect transistors grown by low-energy plasma-enhanced chemical vapor deposition. The heterostructure layer stack consists of a strained Si0.17Ge0.83 alloy channel on a thick compositionally-graded Si0.52Ge0.48 buffer. Structural assessment was done by high resolution x-ray diffraction. Maximum effective hole mobilities of 760 and 4400 cm2/Vs have been measured at 300 and 77 K, respectively. These values exceed the hole mobility in a conventional Si p-MOS device by a factor of 4 and reach the mobility data of conventional Si n-MOS transistors. © 2000 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Dn Low-field transport and mobility; piezoresistance
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions

T. Rotter, D. Mistele, J. Stemmer, F. Fedler, J. Aderhold, J. Graul, V. Schwegler, C. Kirchner, M. Kamp, and M. Heuken

Appl. Phys. Lett. 76, 3923 (2000); http://dx.doi.org/10.1063/1.126822 (3 pages) | Cited 40 times

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We report on photoassisted wet chemical formation of thin oxide films on n-GaN layers in potassium hydroxide based electrolytes at room temperature. The kinetics of the oxide formation and dissolution were examined via photocurrent transients. The tendency of the photocurrent to level out during photoelectrochemical etching experiments is associated with a quasiequilibrium state at the semiconductor/electrolyte interface. Homogeneous oxide films were grown in weak alkaline solutions (11<pH<13) under potentionstatic control with oxidation rates of up to 250 nm/h and characterized by Auger electron spectroscopy. Consequences on wet photochemical etch strategies are discussed. © 2000 American Institute of Physics.
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81.65.Mq Oxidation
82.45.-h Electrochemistry and electrophoresis
81.65.Cf Surface cleaning, etching, patterning
79.20.Fv Electron impact: Auger emission
72.80.Ey III-V and II-VI semiconductors
64.75.-g Phase equilibria
72.40.+w Photoconduction and photovoltaic effects

Avalanche noise measurement in thin Si p+-i-n+ diodes

C. H. Tan, J. C. Clark, J. P. R. David, G. J. Rees, S. A. Plimmer, R. C. Tozer, D. C. Herbert, D. J. Robbins, W. Y. Leong, and J. Newey

Appl. Phys. Lett. 76, 3926 (2000); http://dx.doi.org/10.1063/1.126823 (3 pages) | Cited 20 times

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The avalanche multiplication and excess noise properties of a range of submicron Si diodes have been investigated. In these thin diodes the excess noise is found to fall below that predicted by conventional local noise theory. Modeling of the multiplication and excess noise using a recurrence method, which includes the dead space for carrier ionization, gives good agreement with experiment. This suggests that the dead space can reduce the excess noise in submicron Si diodes. © 2000 American Institute of Physics.
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85.30.Kk Junction diodes
81.05.Cy Elemental semiconductors
85.30.De Semiconductor-device characterization, design, and modeling
85.60.Dw Photodiodes; phototransistors; photoresistors

Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source

C. Bradford, C. B. O’Donnell, B. Urbaszek, A. Balocchi, C. Morhain, K. A. Prior, and B. C. Cavenett

Appl. Phys. Lett. 76, 3929 (2000); http://dx.doi.org/10.1063/1.126824 (3 pages) | Cited 27 times

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Zinc blende MgS has been grown on GaAs by molecular beam epitaxy using a novel method where the sources were Mg and ZnS. A reaction at the surface results in the formation of MgS layers with a Zn content estimated by secondary ion mass spectrometry and Auger spectroscopy to be between 0.5% and 2%. Double crystal x-ray rocking curve measurements of ZnSe/MgS/ZnSe layers show layers with good crystallinity. Using this growth technique layers up to 67 nm thick have been grown. Photoluminescence measurements of MgS/ZnSe/MgS single-quantum-well structures show that the confinement of the heavy hole excitons can be as large as 430 meV for a 1.7 nm well. © 2000 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Dz II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.55.-a Thin film structure and morphology
79.20.Fv Electron impact: Auger emission
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Stark shift in electroluminescence of individual InAs quantum dots

I. E. Itskevich, S. I. Rybchenko, I. I. Tartakovskii, S. T. Stoddart, A. Levin, P. C. Main, L. Eaves, M. Henini, and S. Parnell

Appl. Phys. Lett. 76, 3932 (2000); http://dx.doi.org/10.1063/1.126825 (3 pages) | Cited 21 times

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We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow peaks due to emission from individual dots. From the shift of the peaks in an electric field (the quantum confined Stark effect), we show that the ground and excited states in the dots have different spatial alignments of the electron and hole. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence
78.20.Jq Electro-optical effects
85.60.Jb Light-emitting devices

1.54 μm emission dynamics of erbium-doped zinc-oxide thin films

Shuji Komuro, Tooru Katsumata, Takitaro Morikawa, Xinwei Zhao, Hideo Isshiki, and Yoshinobu Aoyagi

Appl. Phys. Lett. 76, 3935 (2000); http://dx.doi.org/10.1063/1.126826 (3 pages) | Cited 44 times

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Erbium-related 1.54 μm emission dynamics of Er-doped ZnO thin films has been investigated for the different excitation conditions. The excitation was achieved either by exciting indirectly Er3+ ions due to an electron–hole-mediated process or exciting directly discrete energy levels of Er3+ ions. There is no change in the 1.54 μm emission spectrum feature in spite of the different excitation conditions, whereas dramatic change can be seen in the rise time of 1.54 μm emission. The shorter rise time of 1.54 μm emission observed for indirect excitation implies an excitation efficiency superior to direct excitation of Er3+ ions. © 2000 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors

Ultraviolet photon counting with GaN avalanche photodiodes

K. A. McIntosh, R. J. Molnar, L. J. Mahoney, K. M. Molvar, N. Efremow, and S. Verghese

Appl. Phys. Lett. 76, 3938 (2000); http://dx.doi.org/10.1063/1.126827 (3 pages) | Cited 18 times

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Photon counting, utilizing Geiger-mode avalanche response, has been demonstrated at 300 K in avalanche photodiodes fabricated in GaN grown by hydride vapor-phase epitaxy. Measurements have been made using both passive-quench and time-gated modes of operation. The two important figures of merit for photon-counting applications, photon detection efficiency (PDE) and dark count rate, were measured. A maximum PDE of 13% was measured at 325 nm with a dark count rate of 400 kHz. Typical mesa-etched devices exhibit a parasitic shunt leakage current of less than 20 nA at 90% of breakdown voltage. © 2000 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
07.60.Dq Photometers, radiometers, and colorimeters
42.50.Ar Photon statistics and coherence theory

Channeling as a mechanism for dry etch damage in GaN

Elaine D. Haberer, Ching-Hui Chen, Amber Abare, Monica Hansen, Steve Denbaars, Larry Coldren, Umesh Mishra, and Evelyn L. Hu

Appl. Phys. Lett. 76, 3941 (2000); http://dx.doi.org/10.1063/1.126828 (3 pages) | Cited 13 times

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Etch damage of GaN was investigated using a quantum-well probe structure. A clear decrease in photoluminescence (PL) intensity was observed and was aggravated with increasing ion-beam voltage. The magnitude of decrease in PL intensity was much larger than expected, even greater than for GaAs subjected to similar etch conditions. Angle-dependent bombardment studies were carried out to investigate channeling as a damage mechanism in GaN. The large decrease in PL intensity observed near normal incidence or along the [0001] direction suggests that channeling is a damage mechanism for low-energy bombardment in GaN. © 2000 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Transport properties of Bi nanowire arrays

Yu-Ming Lin, Stephen B. Cronin, Jackie Y. Ying, M. S. Dresselhaus, and Joseph P. Heremans

Appl. Phys. Lett. 76, 3944 (2000); http://dx.doi.org/10.1063/1.126829 (3 pages) | Cited 83 times

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To explain various temperature-dependent resistivity measurements [R(T)] on bismuth (Bi) nanowires as a function of wire diameter down to 7 nm, a semiclassical transport model is developed, which explicitly considers anisotropic and nonparabolic carriers in cylindrical wires, and the relative importance of various scattering processes. R(T) of 40 nm Bi nanowires with various Te dopant concentrations is measured and interpreted within this theoretical framework. © 2000 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.At Metal and metallic alloys
81.05.Bx Metals, semimetals, and alloys

Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy

Cheol-Koo Hahn, Junichi Motohisa, and Takashi Fukui

Appl. Phys. Lett. 76, 3947 (2000); http://dx.doi.org/10.1063/1.126830 (3 pages) | Cited 20 times

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Position- and number-controlled InAs self-organized quantum dots (SOQDs) were formed by selective-area-metal-organic chemical vapor phase epitaxy on the partially SiNx patterned GaAs (001) substrate. The mask layer was patterned along the [110] direction, and somewhat wider rectangular openings were also attached to the line. As a result of GaAs SA growth, a pyramidal shaped structure was formed on the rectangular region of the pattern. The top area of the pyramidal structure is a very narrow hexagonal-shaped (001) facet which is surrounded by two-{111}B and four-{124} facets. The SOQD was preferentially formed on the top (001) facet because the growth rate on the (001) facet is far much higher than on the surrounding sidewalls. It is found that the number of SOQDs formed is strongly dependent on the width of the top (001)-facet so that control of single, double, and multiple SOQD(s) is possible. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Doping screening of polarization fields in nitride heterostructures

Aldo Di Carlo, Fabio Della Sala, Paolo Lugli, Vincenzo Fiorentini, and Fabio Bernardini

Appl. Phys. Lett. 76, 3950 (2000); http://dx.doi.org/10.1063/1.126831 (3 pages) | Cited 29 times

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Using self-consistent tight-binding calculations, we show that modulation doping can be used to screen macroscopic polarization fields in nitride quantum wells. The blue-shift of photoluminescence peak as well as the reduction of radiative recombination lifetime at increasing doping density is explained and correlated to polarization-field screening. The field-induced ionization of the dopants and its relation with alloy composition in the heterostructure barriers is also analyzed. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
61.72.uj III-V and II-VI semiconductors
78.55.Cr III-V semiconductors

High-energy recoil implantation of boron into silicon

Lin Shao, Xinming Lu, Jianyue Jin, Qinmian Li, Jiarui Liu, P. A. W. van der Heide, and Wei-Kan Chu

Appl. Phys. Lett. 76, 3953 (2000); http://dx.doi.org/10.1063/1.126832 (3 pages) | Cited 18 times

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One approach to fabricate shallow junctions made of B-doped Si is to deposit B on Si, followed by knocking the B into the Si substrate with Si ions. Conventional belief is that the higher the implantation energy, the deeper the recoil profile. While this is true for low-energy incident ions, we show here that the situation is reversed for incident Si ions of higher energy due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Our experiments show that 500 keV high-energy recoil implantation produces a shallower B profile than lower-energy implantation such as 10 and 50 keV. The secondary ion mass spectrometry analysis shows that the distribution of recoiled B atoms scattered by the energetic Si ions agrees with that calculated on the basis of interatomic potential suggested by W. D. Wilson, L. G. Haagmark, and J. P. Biersack [Phys. Rev. B 15, 2458 (1977)]. Sub-100 nm p+/n junctions have been realized with a 500 keV Si ion beam. © 2000 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.S- Impurities in crystals

Piezoresistive effect in metal–semiconductor–metal structures on p-type GaN

R. Gaska, M. S. Shur, A. D. Bykhovski, J. W. Yang, M. A. Khan, V. V. Kaminski, and S. M. Soloviov

Appl. Phys. Lett. 76, 3956 (2000); http://dx.doi.org/10.1063/1.126833 (3 pages) | Cited 11 times

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We report on a strong piezoresistive effect in metal–semiconductor–metal structures fabricated on p-type GaN. The maximum measured gauge factor was 260, which is nearly two times larger than for piezoresistive silicon transducers. We attribute this large sensitivity to applied strain to the combination of two mechanisms: (i) a high piezoresistance of bulk p-GaN and (ii) a strong piezoresistive effect in a Schottky contact on p-GaN. The obtained results demonstrate that GaN-based structures can be suitable for stress/pressure sensor applications. © 2000 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
73.50.Dn Low-field transport and mobility; piezoresistance
73.30.+y Surface double layers, Schottky barriers, and work functions
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Lw Balance systems, tensile machines, etc.

Nanocrystalline p-type transparent Cu–Al–O semiconductor prepared by chemical-vapor deposition with Cu(acac)2 and Al(acac)3 precursors

Hao Gong, Yue Wang, and Yi Luo

Appl. Phys. Lett. 76, 3959 (2000); http://dx.doi.org/10.1063/1.126834 (3 pages) | Cited 52 times

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P-type transparent copper–aluminum–oxide semiconductor films are prepared by the use of the chemical-vapor deposition (CVD) technique with Cu(acac)2 and Al(acac)3 precursors. Transmission electron microscopy and electron diffraction suggest that the films contain nanocrystalline phases of CuAlO2 and Cu2O, in which CuAlO2 is dominant. Both Hall technique and Seebeck measurement reveal that the film is p type, and a very high room-temperature conductivity of 2 S cm−1 is achieved. This success of high-conductive p-type transparent semiconductor using CVD further paves the way for transparent semiconductor p–n junctions as well as industrial mass production of the relevant devices. The Hall measurement of the film shows a sheet mobility of 0.16 cm2 V−1 S−1 and a carrier concentration of 1.8×1019 cm−3. A wide optical gap of 3.75 eV due to quantum confinement is found, and the activation energy for the positive holes is 0.12 eV. © 2000 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
73.63.-b Electronic transport in nanoscale materials and structures
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Hd Other semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Lw Thermoelectric effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Li Other semiconductors

An electron microscopy study of the growth of Ge nanoparticles in SiO2

C. Bonafos, B. Garrido, M. Lopez, A. Perez-Rodriguez, J. R. Morante, Y. Kihn, G. Ben Assayag, and A. Claverie

Appl. Phys. Lett. 76, 3962 (2000); http://dx.doi.org/10.1063/1.126835 (3 pages) | Cited 27 times

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Ion implantation followed by high temperature annealing can be used to synthesize group IV semiconducting nanoparticles in SiO2. The density and the size distribution of these nanocrystals obviously depend on the implantation and annealing conditions. While their size can be measured by “classical” transmission electron microscopy techniques, their density cannot because no diffraction occurs in the amorphous matrix. In this letter, we use electron energy loss spectroscopy to overcome this problem. We have measured the evolution of the size distribution, the density, and the atomic fraction occupied by the Ge precipitates during annealing. We show that the nanocrystals grow in size and reduce their density, while the overall number of atoms they contain remains constant. This observation proves that the nanoparticles undergo a conservative ripening during annealing. © 2000 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.-w Structure of nanoscale materials
61.72.up Other materials
79.20.Kz Other electron-impact emission phenomena
61.80.Jh Ion radiation effects
61.82.Ms Insulators
61.72.Cc Kinetics of defect formation and annealing
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