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26 Jun 2000

Volume 76, Issue 26, pp. 3849-4013

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Comparison of excited nitrogen sources for molecular-beam-epitaxy GaN growth: Radio frequency and electron cyclotron resonance plasma sources

Sung-Hwan Cho, Hajime Okumura, and Katsuhiro Akimoto

Appl. Phys. Lett. 76, 3861 (2000); http://dx.doi.org/10.1063/1.126802 (3 pages) | Cited 9 times

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A comparative study of electron cyclotron resonance (ECR) and radio frequency (rf) plasma as a nitrogen source for molecular-beam epitaxy GaN was carried out. The effects of differences in the excited nitrogen species on the optical signals during GaN growth were investigated by 77 K photoluminescence (PL). For epitaxial layers grown at optimum V/III ratio using ECR and rf plasma, the PL spectra were dominated by near band-edge emission at 3.47 eV. However, when the V/III ratio was less than the optimum V/III ratio, a broad emission band at about 3.2–3.3 eV was observed in the PL spectrum for the GaN epilayer grown using rf plasma, while in the case of growth using ECR plasma, a deep level emission at about 2.2 eV appeared. These characteristics in PL spectra can used to identify differences in the chemical species in the nitrogen plasma. © 2000 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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