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26 Jun 2000

Volume 76, Issue 26, pp. 3849-4013

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Thermal boundary resistance at Ge2Sb2Te5/ZnS:SiO2 interface

E.-K. Kim, S.-I. Kwun, S.-M. Lee, H. Seo, and J.-G. Yoon

Appl. Phys. Lett. 76, 3864 (2000); http://dx.doi.org/10.1063/1.126852 (3 pages) | Cited 56 times

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The thermal conductivity of sputtered amorphous-Ge2Sb2Te5 (a-GST)/ZnS:SiO2 and crystalline-Ge2Sb2Te5 (c-GST)/ZnS:SiO2 multilayer films has been measured in the temperature range between 50 and 300 K using the 3ω method. The conductivity data in the direction of the cross plane of the films showed lower values than the series conductance of the constituent layers, which was calculated from the thermal conductivity of thick a-GST, c-GST, and ZnS:SiO2 films measured independently. From the reduction in the multilayer thermal conductivity, the thermal boundary resistance at the interface between GST and ZnS:SiO2 films was calculated. The boundary resistance in the c-GST multilayer was lower than that for the a-GST case in the whole measured temperature region. © 2000 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.Dv Thermal stability; thermal effects

Suppression of implantation-induced damage in 6H–SiC by simultaneous excimer laser irradiation during ion implantation

Yuji Hishida, Masanori Watanabe, Kohei Sekine, Kenichi Sugino, and Jun Kudo

Appl. Phys. Lett. 76, 3867 (2000); http://dx.doi.org/10.1063/1.126803 (3 pages) | Cited 1 time

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The implantation-induced damage suppression effect on 6H–SiC by simultaneous excimer laser irradiation during ion implantation (SLII) was demonstrated. A 308-nm XeCl excimer laser was used as the light source. Secondary ion mass spectroscopy indicated that SLII causes N atom diffusion in SiC. The damage suppression effect was evaluated by Rutherford backscattering channeling measurement. SLII proved to be effective for the suppression of implantation-induced damage in SiC. In the vicinity of the surface, SiC with almost no implantation-induced damage was obtained without postimplantation annealing. © 2000 American Institute of Physics.
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61.72.up Other materials
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Cc Kinetics of defect formation and annealing
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Raman scattering study of Ga1−xMnxN crystals

W. Gebicki, J. Strzeszewski, G. Kamler, T. Szyszko, and S. Podsiadło

Appl. Phys. Lett. 76, 3870 (2000); http://dx.doi.org/10.1063/1.126804 (3 pages) | Cited 51 times

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Raman spectra of Ga1−xMnxN crystals grown by the resublimation method have been investigated. New bands around 300 and 667 cm−1, as well as a broad structure near 600 cm−1, not observed in undoped GaN have been found. The temperature dependence of major Raman bands has been measured. The simple model of GaN lattice dynamics has been presented, and the observed bands have been assigned to disorder-activated phonon modes, in good agreement with the calculated phonon density of states. © 2000 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
63.20.-e Phonons in crystal lattices

Chemisorption pathways and Si 2p core-level shifts for the interaction of spherosiloxane clusters with Si(100): Implications for photoemission in Si/SiO2 systems

Krishnan Raghavachari, Alfredo Pasquarello, Joseph Eng, and Mark S. Hybertsen

Appl. Phys. Lett. 76, 3873 (2000); http://dx.doi.org/10.1063/1.126805 (3 pages) | Cited 10 times

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Using a first-principles density functional approach, we investigate the chemisorption mechanism for the interaction of spherosiloxane (H8Si8O12) clusters on Si(100). Our transition state studies reveal that the chemisorption pathway with the lowest activation barrier corresponds to attachment via Si–O bond cleavage across a surface dimer. Using the relaxed surface structure from this “cracked cluster” model, we calculate Si 2p core-level shifts, including core–hole relaxation effects, and show that the calculated values are in excellent agreement with the positions and intensities of all the experimentally observed core-level shifts. © 2000 American Institute of Physics.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
79.60.Dp Adsorbed layers and thin films
73.20.Hb Impurity and defect levels; energy states of adsorbed species
79.60.Jv Interfaces; heterostructures; nanostructures
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Linear and nonlinear optical properties of erbium-implanted coherent array of submicron silica spheres

M. Ajgaonkar, Y. Zhang, H. Grebel, M. Sosnowski, and D. C. Jacobson

Appl. Phys. Lett. 76, 3876 (2000); http://dx.doi.org/10.1063/1.126806 (3 pages) | Cited 3 times

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A coherent array of silica spheres, which was implanted with erbium ions, showed nonlinear behavior at λ=0.532 μm. This was attributed to a large nonlinear refraction effect, which was enhanced by the structure of the opaline matrix. In addition, near infrared photoluminescence measurements showed an overall enhancement as a function of the sphere’s size. A large photoluminescence peak was found around λ = 900 nm and attributed to the lensing effect of the opaline matrix. © 2000 American Institute of Physics.
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78.55.Ap Elemental semiconductors
42.65.Yj Optical parametric oscillators and amplifiers

Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering

Jonathan E. Spanier, Greg T. Dunne, Larry B. Rowland, and Irving P. Herman

Appl. Phys. Lett. 76, 3879 (2000); http://dx.doi.org/10.1063/1.126807 (3 pages) | Cited 15 times

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SiC vapor-phase epitaxy on porous silicon carbide (PSC) substrates formed by electrochemical anodization is reported. Raman scattering indicates that the polytype of the optically smooth SiC grown on PSC formed in both p-type and n-type 6H substrates is 6H. The Raman scattering selection rules in these films are the same as those observed in the bulk substrate and epilayers grown on bulk, indicating high crystalline quality. The formation of epitaxial 6H–SiC on porous 6H–SiC may open up new possibilities for dielectric device isolation, fabrication, and epitaxial lift-off. © 2000 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Hd Other semiconductors
78.30.Hv Other nonmetallic inorganics
78.66.Li Other semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
85.40.Ls Metallization, contacts, interconnects; device isolation

Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy

T. C. G. Reusch, M. Wenderoth, A. J. Heinrich, K. J. Engel, N. Quaas, K. Sauthoff, R. G. Ulbrich, E. R. Weber, K. Uchida, and W. Wegscheider

Appl. Phys. Lett. 76, 3882 (2000); http://dx.doi.org/10.1063/1.126808 (3 pages)

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Cross-sectional scanning tunneling microscopy was used to identify individual Al atoms on cleaved surfaces of two sets of (AlGa)As heterostructure samples grown with metalorganic vapor-phase epitaxy and molecular-beam epitaxy. We determined the average Al concentration profile perpendicular to the GaAs–(AlGa)As interfaces. Based on former investigations of short-range ordering in (AlGa)As bulk material grown with metalorganic vapor-phase epitaxy, we conclude that short-range ordering during growth of the interfacial layers contributes significantly to the observed interface roughness. © 2000 American Institute of Physics.
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68.35.Ct Interface structure and roughness
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Structural characterization of AlAs/AIP superlattices

Yuji Oishi, Masahiro Nagano, and Toshiharu Ohnuma

Appl. Phys. Lett. 76, 3885 (2000); http://dx.doi.org/10.1063/1.126809 (2 pages)

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(AlAs)n/(AlP)n (n = 1–3) short-period superlattices were grown by gas-source migration-enhanced epitaxy at a low growth temperature. Dynamical-theory simulations of x-ray diffraction patterns were conducted and showed good agreement with experimentally obtained patterns. In addition, cross-sectional transmission electron microscopy analysis was performed, which confirmed that high-quality short-period superlattices of AlAs/AlP were grown. © 2000 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.05.cp X-ray diffraction
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Near-field coherent excitation spectroscopy of InGaAs/GaAs self-assembled quantum dots

Y. Toda, T. Sugimoto, M. Nishioka, and Y. Arakawa

Appl. Phys. Lett. 76, 3887 (2000); http://dx.doi.org/10.1063/1.126810 (3 pages) | Cited 33 times

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Using near-field optical microscopy, we have performed coherent excitation spectroscopy of self-assembled quantum dots (SAQDs). A pair of coherent pulses with a time delay between them allows measurement of the temporal coherence of the carrier wave function in single quantum dots. The observed decoherence time is about 15 ps and is well explained by resonant Raman scattering of phonons. Furthermore, quantum beats originating from the superposition of two closely spaced coherent states have been observed. This opens up possibilities of quantum mechanical control of the carrier wave function in SAQDs. © 2000 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.47.-p Spectroscopy of solid state dynamics
78.30.Fs III-V and II-VI semiconductors

Various bonding configurations of transition-metal atoms on carbon nanotubes: Their effect on contact resistance

Antonis N. Andriotis, Madhu Menon, and George E. Froudakis

Appl. Phys. Lett. 76, 3890 (2000); http://dx.doi.org/10.1063/1.126811 (3 pages) | Cited 31 times

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Our investigations reveal that the bonding of the transition-metal atoms on a single-wall carbon nanotube (SWCN) depends on the detailed contact conditions. On the basis of our results, we suggest that the early 3-d elements (Sc, Ti, and V) can be expected to be good candidates for making metal–SWCN contacts of low resistance, while contacts employing the late 3-d elements (Fe, Co, and Ni) and Cu are expected to exhibit large contact resistance. © 2000 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential

In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN

P. Fini, A. Munkholm, Carol Thompson, G. B. Stephenson, J. A. Eastman, M. V. Ramana Murty, O. Auciello, L. Zhao, S. P. DenBaars, and J. S. Speck

Appl. Phys. Lett. 76, 3893 (2000); http://dx.doi.org/10.1063/1.126812 (3 pages) | Cited 31 times

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By performing in situ, real-time x-ray diffraction measurements in the metalorganic chemical-vapor deposition environment, we have directly observed the emergence and evolution of wing tilt that occurs during the lateral overgrowth of GaN from stripes patterned in a SiO2 mask. This was done by repeatedly performing line scans through the 10math3 peak in the direction perpendicular to the [10math0]GaN stripe direction. The wing tilt developed as soon as the wings started forming, and increased slightly thereafter to reach a value of ∼1.19° after 3600 s of growth. Upon cooldown to room temperature, the tilt increased to ∼1.36°, indicating that thermally induced stresses during cooldown have only a small effect on wing tilt. However, changes in mask density, composition, and stress state during early lateral overgrowth must be considered as possible origins of wing tilt. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
62.20.-x Mechanical properties of solids
68.60.Bs Mechanical and acoustical properties

Nanowire formation in a polymeric film

S. Bhattacharrya, S. K. Saha, and D. Chakravorty

Appl. Phys. Lett. 76, 3896 (2000); http://dx.doi.org/10.1063/1.126813 (3 pages) | Cited 36 times

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Silver nanowires of diameter ∼2 nm and length ∼2 mm have been grown by an electrodeposition method within a polyvinyl alcohol film subjected to a two-stage treatment, viz., in ammonium persulphate and pyrrole solutions, respectively. A staircase current–voltage characteristic has been measured in this composite. Also, the material shows a dielectric constant ∼ 104. Both these effects are observed when the applied electric field is in a direction perpendicular to that of the electrodeposition process. © 2000 American Institute of Physics.
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81.15.Pq Electrodeposition, electroplating
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.05.Bx Metals, semimetals, and alloys
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.At Metal and metallic alloys
61.46.-w Structure of nanoscale materials
73.22.-f Electronic structure of nanoscale materials and related systems

Strong surface disorder and loss of N produced by ion bombardment of GaN

S. O. Kucheyev, J. S. Williams, C. Jagadish, G. Li, and S. J. Pearton

Appl. Phys. Lett. 76, 3899 (2000); http://dx.doi.org/10.1063/1.126814 (3 pages) | Cited 32 times

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The damage buildup in wurtzite GaN films under light (12C) and heavy (197Au) ion bombardment at temperatures from −196 to 550 °C is studied by Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the expected damage peak in the region of the maximum of nuclear energy loss has been observed for all implant conditions of this study. Capping of GaN with SiOx and SixNy layers prior to implantation somewhat reduces but does not eliminate surface disordering. This suggests that nitrogen loss is not the main reason for the observed enhanced surface disorder, but, rather, the GaN surface acts as a strong sink for migrating point defects. However, pronounced loss of N during ion bombardment is observed for high dose implantation when the near-surface region is amorphized. Moreover, after amorphization, annealing at temperatures above about 400 °C leads to complete decomposition of the near-surface layer. © 2000 American Institute of Physics.
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81.05.Ea III-V semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

C.-C. Chuo, C.-M. Lee, T.-E. Nee, and J.-I. Chyi

Appl. Phys. Lett. 76, 3902 (2000); http://dx.doi.org/10.1063/1.126815 (3 pages) | Cited 28 times

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Postgrowth thermal annealing was applied to investigate the optical and structural properties of InxGa1−xN/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900 °C results in a twentyfold increase of the integrated photoluminescence intensity. Photoluminescence emission is also improved from a broad band for the as-grown sample to two dominant peaks for the annealed sample. Cross-sectional transmission electron microscopy shows the existence of quantum dot-like islands in the wells for the as-grown sample but these islands are significantly reduced after thermal annealing at 900 °C. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments

Band offset determination in the strained-layer InSb/AlxIn1−xSb system

N. Dai, G. A. Khodaparast, F. Brown, R. E. Doezema, S. J. Chung, and M. B. Santos

Appl. Phys. Lett. 76, 3905 (2000); http://dx.doi.org/10.1063/1.126816 (3 pages) | Cited 11 times

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We use interband exciton transitions in parabolically graded quantum wells to measure the band offset at the InSb/AlxIn1−xSb interface. The method we use is based on similar studies in the GaAs/AlxGa1−xAs system but modified to reflect the strong nonparabolicity and strain of the InSb/AlxIn1−xSb system. We find a conduction band offset ratio of 0.62±0.04 for Al concentrations in the range 2%–12%. The observed lack of variation of the offset with Al concentration suggests a lack of strain dependence in the InSb/AlxIn1−xSb system for practical Al concentrations. © 2000 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Alternating current impedance and Raman spectroscopic study on electrochromic a-WO3 films

Se-Hee Lee, Hyeonsik M. Cheong, C. Edwin Tracy, Angelo Mascarenhas, J. Roland Pitts, Gary Jorgensen, and Satyen K. Deb

Appl. Phys. Lett. 76, 3908 (2000); http://dx.doi.org/10.1063/1.126817 (3 pages) | Cited 51 times

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The chemical diffusion of lithium ions in a-LixWO3 films is investigated using alternating current impedance spectroscopy and Raman scattering measurements. The diffusion coefficients increase with increasing x in a-LixWO3 up to x = 0.072 and then decrease. Raman measurements show that the W6+=O/O–W6+–O ratio also increases at the early stage of lithium insertion and then decreases with further lithium insertion. We conclude that the diffusion kinetics of lithium ions in a-LixWO3 films is very closely related to the W6+=O/O–W6+–O ratio. © 2000 American Institute of Physics.
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78.20.Jq Electro-optical effects
66.30.J- Diffusion of impurities
78.66.Nk Insulators
73.61.Ng Insulators
42.79.Wc Optical coatings
68.60.Wm Other nonelectronic physical properties
61.43.Er Other amorphous solids

Surface enhancement in near-field Raman spectroscopy

E. J. Ayars and H. D. Hallen

Appl. Phys. Lett. 76, 3911 (2000); http://dx.doi.org/10.1063/1.126818 (3 pages) | Cited 23 times

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The intensity and selection rules of Raman spectra change as a metal surface approaches the sample. We study the distance dependence of the new Raman modes with a near-field scanning optical microscope (NSOM). The metal-coated NSOM probe provides localized illumination of a metal surface with good distance control. Spectra are measured as the probe approaches the surface, and the changes elucidated with difference spectra. Comparisons to a theoretical model for Raman excitation by evanescent light near the probe tip indicate that while the general trends are well described, the data show oscillations about the model. © 2000 American Institute of Physics.
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78.30.Hv Other nonmetallic inorganics

Undercooled liquid-to-glass transition during continuous cooling in Pd–Cu–Ni–P alloys

N. Nishiyama, M. Horino, O. Haruyama, and A. Inoue

Appl. Phys. Lett. 76, 3914 (2000); http://dx.doi.org/10.1063/1.126819 (3 pages) | Cited 23 times

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The glass-transition behavior from the supercooled liquid of a Pd40Cu30Ni10P20 alloy was investigated by employing a power-compensated differential scanning calorimetry under continuous cooling. At cooling rates of 0.83, 1.17, and 1.67 K/s, the transition was clearly detected as an abrupt decrease in heat capacity. From the difference in heat capacity between the undercooled liquid and glass, the alloy obtained at the lower cooling rate was found to have a more relaxed structure. The thermodynamic parameters determined in the present study enable us to interpret the reason for the outstandingly high glass-forming ability of the alloy. © 2000 American Institute of Physics.
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64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
65.40.-b Thermal properties of crystalline solids
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Photoelectrochemical etching of InxGa1−xN

J. M. Hwang, J. T. Hsieh, C. Y. Ko, H. L. Hwang, and W. H. Hung

Appl. Phys. Lett. 76, 3917 (2000); http://dx.doi.org/10.1063/1.126820 (3 pages) | Cited 2 times

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Photoelectrochemical (PEC) etching of InxGa1−xN in the KOH solution under illumination of a Hg-arc lamp is studied. An indium oxide surface layer is formed during PEC etching, which slows down the etching rate. The PEC etch rate of InxGa1−xN is determined by dissolution of indium oxides into the solution. Increase of the solution temperature results in an increase of solubility of indium oxides and thus enhances the PEC etch rate. It is found that stirring the solution can accelerate indium oxides to dissolve into the solution and increase the etch rate. The thick indium oxide layer on the PEC-etched InxGa1−xN surface can be effectively removed by the treatment of using a hot 6N HCl solution. A post-treatment by using a 3.2 M KOH solution can provide a smooth sidewall on the PEC-etched surface for the potential application to laser cavity. © 2000 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
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