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17 Jan 2000

Volume 76, Issue 3, pp. 253-392

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GaAs/AlGaAs distributed feedback quantum cascade lasers

W. Schrenk, N. Finger, S. Gianordoli, L. Hvozdara, G. Strasser, and E. Gornik

Appl. Phys. Lett. 76, 253 (2000); http://dx.doi.org/10.1063/1.125738 (3 pages) | Cited 25 times

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We report on the realization of distributed feedback quantum cascade lasers in the GaAs/AlGaAs material system. A metallized surface relief grating is used for feedback. Both single mode and double mode emission is observed at λ≈10 μm. The coupling coefficient is measured from the mode spacing for double mode emission to be 24 cm−1. The emission wave number can be tuned with the temperature at a rate of dν/dT ≈ 0.048 cm−1/K. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.60.Fc Modulation, tuning, and mode locking

Continuous-wave operation of λ = 3.25 μm broadened-waveguide W quantum-well diode lasers up to T = 195 K

W. W. Bewley, H. Lee, I. Vurgaftman, R. J. Menna, C. L. Felix, R. U. Martinelli, D. W. Stokes, D. Z. Garbuzov, J. R. Meyer, M. Maiorov, J. C. Connolly, A. R. Sugg, and G. H. Olsen

Appl. Phys. Lett. 76, 256 (2000); http://dx.doi.org/10.1063/1.125739 (3 pages) | Cited 65 times

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Mid-infrared (λ = 3.25 μm) broadened-waveguide diode lasers with active regions consisting of 5 type-II “W” quantum wells operated in continuous-wave (cw) mode up to 195 K. At 78 K, the threshold current density was 63 A/cm2, and up to 140 mW of cw output power was generated. A second structure with ten quantum wells operated up to 310 K in pulsed mode. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Pk Continuous operation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices

H. Kim, C. M. Gilmore, J. S. Horwitz, A. Piqué, H. Murata, G. P. Kushto, R. Schlaf, Z. H. Kafafi, and D. B. Chrisey

Appl. Phys. Lett. 76, 259 (2000); http://dx.doi.org/10.1063/1.125740 (3 pages) | Cited 146 times

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Aluminum-doped zinc oxide (AZO) thin films (∼3000 Å) with low electrical resistivity and high optical transparency have been grown by pulsed-laser deposition on glass substrates without a postdeposition anneal. Films were deposited at substrate temperatures ranging from room temperature to 400 °C in O2 partial pressures ranging from 0.1 to 50 mTorr. For 3000-Å-thick AZO films grown at room temperature in an oxygen pressure of 5 mTorr, the electrical resistivity was 8.7×10−4 Ω cm and the average optical transmittance was 86% in the visible range (400–700 nm). For 3000-Å-thick AZO films deposited at 200 °C in 5 mTorr of oxygen, the resistivity was 3.8×10−4 Ω cm and the average optical transmittance in the visible range was 91%. AZO films grown at 200 °C were used as an anode contact for organic light-emitting diodes. The external quantum efficiency measured from these devices was about 0.3% at a current density of 100 A/m2. © 2000 American Institute of Physics.
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78.66.Hf II-VI semiconductors
73.61.Ga II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.60.Jb Light-emitting devices
81.15.Fg Pulsed laser ablation deposition
81.05.Dz II-VI semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance

Time-resolved photoresponse of a gallium-doped germanium photoconductor using a variable pulse-width terahertz source

F. A. Hegmann, J. B. Williams, B. Cole, M. S. Sherwin, J. W. Beeman, and E. E. Haller

Appl. Phys. Lett. 76, 262 (2000); http://dx.doi.org/10.1063/1.125741 (3 pages) | Cited 10 times

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Picosecond to nanosecond-wide terahertz pulses are used to study the fast photoresponse of a gallium-doped germanium (Ge:Ga) photoconductor operating at 4.2 K. A recombination time of about 2 ns is observed in the time-resolved photoresponse. Laser-activated semiconductor reflection switches are used to “slice” the variable-width terahertz pulses from the quasicontinuous-wave output of a free-electron laser. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
72.40.+w Photoconduction and photovoltaic effects
78.47.-p Spectroscopy of solid state dynamics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
41.60.Cr Free-electron lasers

Relative electrical resistivities and poling of nonlinear optical polymeric waveguides

Tomáš Pliška, Joachim Meier, Arne Eckau, Vincent Ricci, Anne-Claire Le Duff, Michael Canva, George I. Stegeman, Paul Raymond, François Kajzar, and Kwok Pong Chan

Appl. Phys. Lett. 76, 265 (2000); http://dx.doi.org/10.1063/1.125742 (3 pages) | Cited 3 times

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A method based on Maker fringe measurements of nonlinear optical coefficients has been used to determine the relative dc electrical resistivities of a series of linear and nonlinear optical polymers. The method can be used to identify low resistivity linear cladding materials for optimized electric field poling of nonlinear optical polymeric waveguides. As an example of the application of the technique we have studied the resistivity of poly(methyl methacrylate)-polystyrene (PMMA-PS) copolymers with varying content of the two components. The resistivity of PMMA was found to be one order of magnitude lower than that of PS. © 2000 American Institute of Physics.
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42.70.Jk Polymers and organics
42.65.Wi Nonlinear waveguides
77.22.Ej Polarization and depolarization
73.61.Ph Polymers; organic compounds
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Photonic-crystal spot-size converter

Hideo Kosaka, Takayuki Kawashima, Akihisa Tomita, Takashi Sato, and Shojiro Kawakami

Appl. Phys. Lett. 76, 268 (2000); http://dx.doi.org/10.1063/1.125743 (3 pages) | Cited 28 times

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We have demonstrated a spot-size converter (SSC) that is made of photonic crystals (PCs) and has a conversion ratio of 10:1 for a 1-μm-wavelength light beam. Its real-spatial distribution was narrowed by intentionally broadening its wave vector distribution and increasing effective refractive index. The advantage of this PC-based SSC over conventional bulk-based SSC are compactness (monolithic integration), positional independence, and extremely deep depth of focus. This PC-SSC is a candidate for an interface between photonic-crystal waveguides and conventional optical waveguides. © 2000 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range

A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, M. Hofmann, W. Stolz, and W. W. Rühle

Appl. Phys. Lett. 76, 271 (2000); http://dx.doi.org/10.1063/1.125744 (2 pages) | Cited 37 times

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The temperature dependence of the emission of a (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is investigated. We find laser emission over an extremely broad temperature range from 30 K up to 388 K. The laser threshold varies from 5 kW/cm2 at 373 K down to a minimum of 1 kW/cm2 at 180 K and increases again to 4 kW/cm2 at 30 K. Picosecond emission dynamics after femtosecond optical excitation is obtained with peak delays below 33 ps and pulse widths below 20 ps over the entire operation range. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

J. W. Yang, A. Lunev, G. Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, and R. Gaska

Appl. Phys. Lett. 76, 273 (2000); http://dx.doi.org/10.1063/1.125745 (3 pages) | Cited 48 times

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We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor deposition growth procedure in selective areas defined by openings in a SiO2 mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 °C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the thermal impedance. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.40.Hp Lithography, masks and pattern transfer

Switching dynamics between single-mode and dual-mode pulse emissions from a self-seeded laser diode

K. K. Chow and C. Shu

Appl. Phys. Lett. 76, 276 (2000); http://dx.doi.org/10.1063/1.125746 (3 pages) | Cited 4 times

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Spectrally selected, self-seeded pulses are generated from a Fabry–Perot laser diode in an external cavity containing a two-chromatic fiber grating. Electrical switching between single-mode and dual-mode operations is demonstrated by controlling the amplitude of the ac signal applied to the laser diode. The principle is based on carrier induced frequency chirp that determines the spectral overlap of the Fabry–Perot modes with the grating reflection band during the pulse buildup time. We also investigate the switching dynamics and show that the steady states can be reached after about five to six round-trip cycles. The buildup of single-mode emissions is slightly faster than that of the dual mode. © 2000 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Intracavity lens for low-divergence high-power laser diode operation

A. M. Rashed, K. A. Williams, P. J. Heard, R. V. Penty, and I. H. White

Appl. Phys. Lett. 76, 279 (2000); http://dx.doi.org/10.1063/1.125721 (3 pages) | Cited 2 times

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An intracavity lens has been integrated into a high-power tapered ridge-waveguide semiconductor laser diode. The lens is designed to compensate for the phase curvature of the incident mode on the output facet. This has led to improved linearity in the light–current characteristics of the device, showing an increase of up to 47% in power slope efficiency and a reduction of up to 17% in the full width at e−2 intensity of the far field pattern. © 2000 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

A wavelength multiplexer using cascaded three-dimensional vertical couplers

Bin Liu, Ali Shakouri, P. Abraham, and John E. Bowers

Appl. Phys. Lett. 76, 282 (2000); http://dx.doi.org/10.1063/1.125722 (3 pages) | Cited 7 times

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A four-channel wavelength multiplexer/demultiplexer for sparse wavelength division multiplexing was demonstrated using cascaded three-dimensional (3D) vertical couplers. 17 nm channel spacing with crosstalk less than 15 dB was achieved. Strong coupled vertical couplers were fabricated using wafer bonding to invert a conventionally processed epitaxial layer and bond to a new host substrate. This technology makes the fabrication of 3D photonic integrated circuits and the realization of multilevel optical interconnects possible. © 2000 American Institute of Physics.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.Ds Interconnects, including holographic interconnects
42.82.Et Waveguides, couplers, and arrays
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
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Fused hollow cathode cold atmospheric plasma

H. Baránková and L. Bárdoš

Appl. Phys. Lett. 76, 285 (2000); http://dx.doi.org/10.1063/1.125723 (3 pages) | Cited 23 times

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A fused hollow cathode (FHC) plasma source is introduced. The system of radio-frequency (rf) generated hollow cathodes with flowing gas forms an integrated electrode source which operates in the pressure range from 1 Torr to atmospheric pressure. The diameter of the source is 3.5 cm. However, the construction perfectly enables further scaling up. The forward rf power to sustain the discharge at atmospheric pressure can be as low as 2 W. The discharge is stable, volume filling, silent, with no streamers. The FHC atmospheric plasma source is very promising for surface processing, specially on temperature sensitive substrates, and may substantially save costs by avoiding investments into the vacuum equipment. © 2000 American Institute of Physics.
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52.50.Dg Plasma sources
52.80.Pi High-frequency and RF discharges

An atmospheric pressure plasma source

Jaeyoung Park, I. Henins, H. W. Herrmann, G. S. Selwyn, J. Y. Jeong, R. F. Hicks, D. Shim, and C. S. Chang

Appl. Phys. Lett. 76, 288 (2000); http://dx.doi.org/10.1063/1.125724 (3 pages) | Cited 103 times

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An atmospheric pressure plasma source operated by radio frequency power has been developed. This source produces a unique discharge that is volumetric and homogeneous at atmospheric pressure with a gas temperature below 300 °C. It also produces a large quantity of oxygen atoms, ∼ 5×1015 cm−3, which has important value for materials applications. A theoretical model shows electron densities of 0.2–2×1011 cm−3 and characteristic electron energies of 2–4 eV for helium discharges at a power level of 3–30 W cm−3. © 2000 American Institute of Physics.
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52.50.Dg Plasma sources
52.80.Pi High-frequency and RF discharges
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
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Refractive index and gap energy of cubic InxGa1−xN

R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D. J. As, and K. Lischka

Appl. Phys. Lett. 76, 291 (2000); http://dx.doi.org/10.1063/1.125725 (3 pages) | Cited 32 times

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Spectroscopic ellipsometry studies have been carried out in the energy range from 1.5 to 4.0 eV in order to determine the complex refractive indices for cubic InGaN layers with various In contents. The films were grown by molecular-beam epitaxy on GaAs(001) substrates. By studying GaN films, we prove that for the analysis of optical data, a parametric dielectric function model can be used. Its application to the InGaN layers yields, in addition, the composition dependence of the average fundamental absorption edge at room temperature. From the latter, a bowing parameter of 1.4 eV is deduced. © 2000 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds
78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Straight β-SiC nanorods synthesized by using C–Si–SiO2

H. L. Lai, N. B. Wong, X. T. Zhou, H. Y. Peng, Frederick C. K. Au, N. Wang, I. Bello, C. S. Lee, S. T. Lee, and X. F. Duan

Appl. Phys. Lett. 76, 294 (2000); http://dx.doi.org/10.1063/1.125636 (3 pages) | Cited 33 times

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Straight beta-silicon carbide nanorods have been grown on silicon wafers using hot filament chemical vapor deposition with iron particles as catalyst. A plate made of a C–Si–SiO2 powder mixture was used as carbon and silicon sources. Hydrogen, which was the only gas fed into the deposition system, acts both as a reactant and as a mass transporting medium. The diameter of the β-SiC nanorod ranged from 20 to 70 nm, while its length was approximately 1 μm. A growth mechanism of beta-silicon carbide nanorods was proposed. The field emission properties of the beta-silicon carbide nanorods grown on the silicon substrate are also reported. © 2000 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
79.70.+q Field emission, ionization, evaporation, and desorption
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Na Fullerenes and related materials
78.66.Tr Fullerenes and related materials

Tl incorporation in InSb and lattice contraction of In1−xTlxSb

J. J. Lee and M. Razeghi

Appl. Phys. Lett. 76, 297 (2000); http://dx.doi.org/10.1063/1.125765 (3 pages) | Cited 5 times

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Ternary In1−xTlxSb thin films are grown by low pressure metalorganic chemical vapor deposition in the high In composition region. Infrared photoresponse spectra of the In1−xTlxSb epilayers show a clear shift toward a longer wavelength compared to that of InSb. Tl incorporation is confirmed by Auger electron spectroscopy. In contrast to the theoretical expectation, high resolution x-ray diffraction study reveals that the lattice of the In1−xTlxSb epilayers is contracted by the incorporation of Tl. As more Tl is incorporated, the lattice contraction is observed to increase gradually in the experimental range. A possible origin of this phenomenon is discussed. Our experimental results suggest that the Tl incorporation behavior in In1−xTlxSb differs from that of other group III impurities in III antimonides. © 2000 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Effect of dopant atoms on the roughness of III–V semiconductor cleavage surfaces

P. Quadbeck, Ph. Ebert, K. Urban, J. Gebauer, and R. Krause-Rehberg

Appl. Phys. Lett. 76, 300 (2000); http://dx.doi.org/10.1063/1.125726 (3 pages) | Cited 3 times

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We demonstrate that the presence of dopant atoms influences the roughness, morphology, and optical mirror properties of III–V semiconductor (110) cleavage surfaces. High concentrations of Te dopant atoms in GaAs lead to macroscopically curvatured (110) cleavage surfaces with high step concentrations. This “glass-like” fracture behavior is explained by the “lattice superdilation phenomenon” induced by high concentrations of Te dopant atoms in GaAs. © 2000 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Gy Mechanical properties; surface strains
68.35.Dv Composition, segregation; defects and impurities
42.79.Bh Lenses, prisms and mirrors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
62.20.M- Structural failure of materials

Formation of crystalline Ba-ferrite phase from α-Fe2O3 phase in amorphous precursor

Tae Sik Cho, Jung Ho Je, and Do Young Noh

Appl. Phys. Lett. 76, 303 (2000); http://dx.doi.org/10.1063/1.125727 (3 pages) | Cited 7 times

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The formation of crystalline Ba-ferrite/sapphire(001) films in an amorphous precursor during annealing was studied in a real-time synchrotron x-ray scattering experiment. From the x-ray integrated intensity and the surface morphology, we found that the crystalline Ba-ferrite phase was formed by solid phase transformation of the intermediate crystalline α-Fe2O3 phase, not by direct crystallization of the amorphous precursor. The solid phase transformation occurred at temperature above 500 °C. The high crystallization temperature of the Ba-ferrite phase was attributed to the activation barrier for the diffusion of Ba ions into the α-Fe2O3 phase. © 2000 American Institute of Physics.
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68.55.-a Thin film structure and morphology
75.50.Gg Ferrimagnetics
68.35.B- Structure of clean surfaces (and surface reconstruction)
75.70.Ak Magnetic properties of monolayers and thin films
61.43.Er Other amorphous solids
61.72.Cc Kinetics of defect formation and annealing
75.50.Ss Magnetic recording materials
66.30.J- Diffusion of impurities

Step-bunching instability in strained-layer superlattices grown on vicinal substrates

G. Patriarche, A. Ougazzaden, and F. Glas

Appl. Phys. Lett. 76, 306 (2000); http://dx.doi.org/10.1063/1.125728 (3 pages) | Cited 4 times

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Epitaxial structures containing either compressive or tensile InGaAsP layers separated by InP layers were grown on variously misoriented vicinal (001) InP substrates and studied by transmission electron microscopy. Except for zero misorientation, the compressive layers develop long-wavelength asymmetrical lateral thickness modulations. We demonstrate that the associated surface undulation consists of periodic bunches involving only the initial substrate steps. With increasing misorientation, the wavelength of the modulation and its phase shift between successive layers decrease, whereas its amplitude increases. On the other hand, all tensile layers develop short-wavelength localized symmetrical thickness variations often involving facets. For intermediate misorientations, they also display undulations similar to those observed in compressive layers. © 2000 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.35.B- Structure of clean surfaces (and surface reconstruction)

In situ transmission electron microscope studies of the kinetics of abnormal grain growth in electroplated copper films

Stefan P. Hau-Riege and Carl V. Thompson

Appl. Phys. Lett. 76, 309 (2000); http://dx.doi.org/10.1063/1.125729 (3 pages) | Cited 32 times

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We have performed in situ transmission electron microscopy studies of abnormal grain growth in electroplated copper films at room temperature and 55 °C, starting minutes after the plating process by electroplating directly onto electron-transparent membranes. A kinetic analysis indicates that the grains that grow abnormally, reject impurities as they grow, so that the impurities accumulate in (and must diffuse through) the untransformed matrix. This suggests that while impurities impair normal grain growth, impurity rejection contributes to the energetics that drive abnormal grain growth. This result also indicates that removal of impurities from the film can control the kinetics of the transformation to large-grained structures. © 2000 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Pq Electrodeposition, electroplating
85.40.Ls Metallization, contacts, interconnects; device isolation
81.05.Bx Metals, semimetals, and alloys

Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states

M. Hong, Z. H. Lu, J. Kwo, A. R. Kortan, J. P. Mannaerts, J. J. Krajewski, K. C. Hsieh, L. J. Chou, and K. Y. Cheng

Appl. Phys. Lett. 76, 312 (2000); http://dx.doi.org/10.1063/1.125730 (3 pages) | Cited 37 times

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Growth of the first few layers of an oxide mixture Ga2O3(Gd2O3) on GaAs (100) substrate, electron-beam evaporated from a Ga5Go3O12 source, was found to be a single crystal. Reflection high-energy electron diffraction and x-ray diffraction studies show that the thin oxide film is epitaxially grown on GaAs with the surface normal (110) and in-plane axis [001] parallel to (100) and [011] of GaAs, respectively, and has a structure isomorphic to Mn2O3. Studies using high-resolution transmission electron microscopy on the oxide–GaAs interface indicate some atomic registry between the oxide and GaAs during the initial growth. The chemical composition of the oxide film was determined by x-ray photoelectron spectroscopy to be unequivocally pure Gd2O3. © 2000 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.35.Ct Interface structure and roughness
68.55.Nq Composition and phase identification

X-ray microdiffraction study of Cu interconnects

X. Zhang, H. Solak, F. Cerrina, B. Lai, Z. Cai, P. Ilinski, D. Legnini, and W. Rodrigues

Appl. Phys. Lett. 76, 315 (2000); http://dx.doi.org/10.1063/1.125731 (3 pages) | Cited 9 times

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We have used x-ray microdiffraction to study the local structure and strain variation of copper interconnects. Different types of local microstructures have been found in different samples. Our data show that the Ti adhesion layer has a very dramatic effect on Cu microstructure. Strain measurement was conducted before and after electromigration test, Cu fluorescence was used to find the mass variations around voids and hillocks, and x-ray microdiffraction was used to measure the strain change around that interested region. © 2000 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
68.35.B- Structure of clean surfaces (and surface reconstruction)

Stimulated emission study of InGaN/GaN multiple quantum well structures

Chi-Chih Liao, Shih-Wei Feng, C. C. Yang, Yen-Sheng Lin, Kung-Jen Ma, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi

Appl. Phys. Lett. 76, 318 (2000); http://dx.doi.org/10.1063/1.125732 (3 pages) | Cited 7 times

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We report the study results of an InGaN/GaN multiple quantum well structure with a nominal indium content of 25%. The high-resolution transmission electron microscopy and x-ray diffraction show clear indium aggregation and phase separation. Stimulated emission data always show two major peaks in spectrum. The long- (short-) wavelength peak is assigned to the recombination of localized state carriers (free carriers). At low temperatures or optical pump levels, the localized-state recombination dominates the stimulated emission; however, at high temperatures or pump levels, the free-carrier recombination becomes dominant. The peak position corresponding to localized states changes little in spectrum as temperature or pump level varies. This result is attributed to carrier overflow, strain relaxation, and carrier shielding in increasing temperature or carrier supply. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.45.+h Stimulated emission
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Transition from small interstitial clusters to extended {311} defects in ion-implanted Si

Salvatore Coffa, Sebania Libertino, and Corrado Spinella

Appl. Phys. Lett. 76, 321 (2000); http://dx.doi.org/10.1063/1.125733 (3 pages) | Cited 40 times

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We have investigated the transition from small interstitial clusters to {311} defects in ion-implanted Si. Czochralski Si wafers were implanted with 1.2 MeV Si ions to fluences in the range 1012–5×1013/cm2 and annealed at temperatures of 600–750 °C for times as long as 15 h. Photoluminescence and transmission electron microscopy analyses allowed us to analyze the transition of small interstitial clusters, formed by the agglomeration of the excess interstitials introduced by the beam, into {311} defects. It is found that {311} defects form only at fluences ≥ 1013/cm2 and at temperatures above 600 °C. When {311} are observed in transmission electron microscopy, the luminescence spectrum is dominated by a sharp signal at 1376 nm which has been correlated with optical transitions occurring at or close to these defects. At lower temperatures or at lower fluence, no extended defects are observed in transmission electron microscopy and the luminescence spectrum present two broad signatures arising from carrier recombination at interstitial clusters. These data strongly indicate that a severe structural transformation occurs in the evolution from small interstitial clusters to extended {311} defects. © 2000 American Institute of Physics.
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61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
61.72.Nn Stacking faults and other planar or extended defects
61.72.uf Ge and Si
64.70.K- Solid-solid transitions
78.55.Ap Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
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Polarity-dependent rejuvenation of ferroelectric properties of integrated SrBi2Ta2O9 capacitors by electrical stressing

Suk-Kyoung Hong, Cheol Seong Hwang, Oh Seong Kwon, and Nam Soo Kang

Appl. Phys. Lett. 76, 324 (2000); http://dx.doi.org/10.1063/1.125764 (3 pages) | Cited 12 times

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The electric-field-induced rejuvenation behavior of the degraded ferroelectric properties of integrated Pt/SrBi2Ti2O9/Pt capacitors was investigated. Integration processes, especially plasma-enhanced chemical vapor deposition of the passivation layers, generate hydrogen ions and electrons which act as domain pinning centers and a source of a negative internal electric field. Domain pinning was found to reduce the remanent polarization (Pr) and internal field that induces an imprint to the positive bias direction. Alternating current cyclings with peak voltages of +/−6 V rejuvenated the degraded ferroelectric performance of the capacitors. Cycling with a negative bias was more effective in fixing the damage than was a positive bias. Baking at 125 °C again degraded the rejuvenated ferroelectric performance. The degree of re-degradation was also dependent on the polarity of the rejuvenating bias. The polarity-dependent behavior of rejuvenation was explained on the basis of a negative-internal-field model due to preferential capture of electrons from the plasma at the top electrodes. © 2000 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
84.30.Sk Pulse and digital circuits
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