APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

17 Jan 2000

Volume 76, Issue 3, pp. 253-392

Return to All Sections
back to top
RSS Feeds

Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment

J. P. Xu, P. T. Lai, C. L. Chan, and Y. C. Cheng

Appl. Phys. Lett. 76, 372 (2000); http://dx.doi.org/10.1063/1.126120 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Effects of preoxidation NH3 treatment on p-type 6H–SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. © 2000 American Institute of Physics.
Show PACS
81.65.-b Surface treatments
81.05.Hd Other semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
72.20.Ht High-field and nonlinear effects
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close