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17 Jan 2000

Volume 76, Issue 3, pp. 253-392

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Nanometer-scale conversion of Si3N4 to SiOx

F. S.-S. Chien, J.-W. Chang, S.-W. Lin, Y.-C. Chou, T. T. Chen, S. Gwo, T.-S. Chao, and W.-F. Hsieh

Appl. Phys. Lett. 76, 360 (2000); http://dx.doi.org/10.1063/1.125754 (3 pages) | Cited 45 times

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It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (<5 nm) Si3N4 films to SiOx. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 103 nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiOx. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si3N4, SiO2, and Si, AFM patterning of Si3N4 films can be a promising method for fabricating nanoscale structures. © 2000 American Institute of Physics.
Show PACS
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.Mq Oxidation
07.79.Lh Atomic force microscopes
85.40.Hp Lithography, masks and pattern transfer
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Lifetime estimation due to imprint failure in ferroelectric SrBi2Ta2O9 thin films

M. Grossmann, O. Lohse, D. Bolten, U. Boettger, R. Waser, W. Hartner, M. Kastner, and G. Schindler

Appl. Phys. Lett. 76, 363 (2000); http://dx.doi.org/10.1063/1.125755 (3 pages) | Cited 20 times

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Two different failure modes for a ferroelectric memory cell caused by imprint, the read failure due to the loss of polarization, and the write failure due to the shift of the hysteresis loop are investigated. The quasistatic hysteresis loop allows us to distinguish which failure mode is dominating in a ferroelectric random access memory application and, hence, it can also be used as a powerful tool for lifetime estimation of ferroelectric thin films limited by imprint failure under operating conditions. The experimental results show that the write failure is only decisive for very low voltage operation (Vp<1.25 V), whereas for the Pt/SrBi2Ta2O9/Pt under investigation the read failure is the dominant failure mode for operating voltages exceeding 1.25 V. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
84.30.Sk Pulse and digital circuits
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization

Investigations into local piezoelectric properties by atomic force microscopy

C. Durkan, D. P. Chu, P. Migliorato, and M. E. Welland

Appl. Phys. Lett. 76, 366 (2000); http://dx.doi.org/10.1063/1.125756 (3 pages) | Cited 28 times

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We describe nanoscale characterization of sol-gel produced ferroelectric thin films of lead–zirconate–titanate. We have performed quantitative localized measurements of surface polarization charge density using atomic force microscopy techniques in conjunction with electric field calculations. We show that domains with radii of 40 nm may by written and subsequently characterized, and we analyze the dependence of domain size on write voltage and write time, and show that surface contaminants influence the formation of domains. © 2000 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
07.79.Lh Atomic force microscopes
77.65.-j Piezoelectricity and electromechanical effects
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Switching properties of SrBi2Ta2O9 thin films produced by metalorganic decomposition

X. B. Chen, F. Yan, C. H. Li, Z. G. Zhang, J. S. Zhu, and Y. N. Wang

Appl. Phys. Lett. 76, 369 (2000); http://dx.doi.org/10.1063/1.125757 (3 pages) | Cited 17 times

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The process of polarization reversal in a SrBi2Ta2O9 (SBT) thin film capacitor produced by a metalorganic decomposition method was investigated. The switching time (100–600 ns) and the reversible polarization have been measured at different voltages in the range of 0–5 V. It was found that by annealing the SBT sample in AR atmosphere at 400 °C, the switching times were significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.55.-g Dielectric thin films
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
81.40.Gh Other heat and thermomechanical treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
84.32.Tt Capacitors
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