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17 Jan 2000

Volume 76, Issue 3, pp. 253-392

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Current saturation mechanisms in carbon nanotube field emitters

Kenneth A. Dean and Babu R. Chalamala

Appl. Phys. Lett. 76, 375 (2000); http://dx.doi.org/10.1063/1.125758 (3 pages) | Cited 212 times

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Recent studies have shown a current limiting effect in the field emission behavior of carbon nanotubes. In this letter, we demonstrate that an individual nanotube exhibits current saturation above 100 nA of emission current, and we show that this current saturation is a direct result of an adsorbate-enhanced field emission mechanism. Current saturation results from the displacement of adsorbates from configurations of tunneling enhancement as electric field and current are increased. Saturation is concurrent with rapid fluctuations in emission current and distinctive changes in the field emission patterns. At high fields, the adsorbate states are completely removed from the nanotube. A single, clean single-walled nanotube shows no evidence of current saturation for emission currents reaching 2 μA. © 2000 American Institute of Physics.
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85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
73.61.Wp Fullerenes and related materials

An apertureless near-field microscope for fluorescence imaging

T. J. Yang, Guillaume A. Lessard, and Stephen R. Quake

Appl. Phys. Lett. 76, 378 (2000); http://dx.doi.org/10.1063/1.125759 (3 pages) | Cited 4 times

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We describe an apertureless near field microscope for imaging fluorescent samples. Optical contrast is generated by exploiting fluorescent quenching near a metallized atomic force microscope tip. This microscope has been used to image fluorescent latex beads with subdiffraction limit resolution. The use of fluorescence allows us to prove that the contrast mechanism is indeed spectroscopic in origin. © 2000 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
87.64.mt Near-field scanning
78.55.-m Photoluminescence, properties and materials

Thin crystalline functional group copolymer poly(vinylidene fluoride–trifluoroethylene) film patterning using synchrotron radiation

Jaewu Choi, H. M. Manohara, E. Morikawa, P. T. Sprunger, P. A. Dowben, and S. P. Palto

Appl. Phys. Lett. 76, 381 (2000); http://dx.doi.org/10.1063/1.125760 (3 pages) | Cited 10 times

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The photodegradation mechanism due to synchrotron radiation exposure of crystalline poly[vinylidene fluoride–trifluoroetylene, P(VDF–TrFE)] copolymer thin films has been studied with ultraviolet photoemission spectroscopy (UPS) and mass spectroscopy. Upon increasing exposure to x-ray white light (hν ⩽ 1000 eV), UPS measurements reveal that substantial chemical modifications occur in P(VDF–TrFE) 5 monolayer films, including the emergence of new valence band features near the Fermi level, indicating a semimetallic photodegradeted product. The photodetached fragments of the copolymer consist mainly of H2, HF, CHF, CH2. This x-ray exposure study demonstrates that P(VDF–TrFE) films, possessing unique technologically important properties, can be directly patterned by x-ray lithographic processes. © 2000 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
82.50.Kx Processes caused by X-rays or γ-rays
82.35.-x Polymers: properties; reactions; polymerization
71.20.Rv Polymers and organic compounds
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
77.55.-g Dielectric thin films
77.84.Jd Polymers; organic compounds

Scanning gate spectroscopy on nanoclusters

L. Gurevich, L. Canali, and L. P. Kouwenhoven

Appl. Phys. Lett. 76, 384 (2000); http://dx.doi.org/10.1063/1.125761 (3 pages) | Cited 15 times

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A gated probe for scanning tunneling microscopy (STM) has been developed. The probe extends normal STM operations by means of an additional electrode fabricated next to the tunneling tip. The extra electrode does not make contact with the sample and can be used as a gate. We report on the recipe used for fabricating the tunneling tip and the gate electrode on a silicon nitride cantilever. We demonstrate the functioning of the scanning gate probes by performing single-electron tunneling spectroscopy on 20-nm-gold clusters for different gate voltages. © 2000 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
07.79.Cz Scanning tunneling microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
73.23.Hk Coulomb blockade; single-electron tunneling

Parametric phase conjugation of a wide-band acoustic pulse in supercritical mode

P. Pernod and V. Preobrazhensky

Appl. Phys. Lett. 76, 387 (2000); http://dx.doi.org/10.1063/1.125762 (3 pages) | Cited 5 times

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Parametric wave phase conjugation of wide-band ultrasonic pulses of 100% relative bandwidth is demonstrated. The giant amplification allowed by the supercritical mode of the magnetoacoustic technique used, leads to a relatively high efficiency of the conjugation process. In addition, the pulse response function of the magnetoacoustic conjugator in supercritical mode is derived by fitting the experimental results with the linear theory of phase conjugation. The latter provides the parameters that define the maximum value of acoustic power in the conjugate wave. The results are of interest for applications in nondestructive evaluation and acoustical imaging. © 2000 American Institute of Physics.
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43.35.Rw Magnetoacoustic effect; oscillations and resonance
43.25.Lj Parametric arrays, interaction of sound with sound, virtual sources
75.80.+q Magnetomechanical effects, magnetostriction
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
81.70.Cv Nondestructive testing: ultrasonic testing, photoacoustic testing

Reverse-poling effects on charge retention in Pb(Zr,Ti)O3(001)/LaNiO3(001) heterostructures

W. Jo, D. C. Kim, and J. W. Hong

Appl. Phys. Lett. 76, 390 (2000); http://dx.doi.org/10.1063/1.125763 (3 pages) | Cited 26 times

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We report charge retention in preferentially c-axis oriented ferroelectric Pb(Zr,Ti)O3 (PZT) thin films on LaNiO3 by electrostatic force microscopy. The surface charge density of the PZT films was observed as a function of time in a selected area where a region is single poled and another region is reverse poled. Retention behaviors of the regions are very different: the single-poled region shows a declined response and the reverse-poled region reveals a retained characteristic. Decay and retention mechanisms of the regions are explained by space-charge redistribution and trapping of defects in the films. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ej Polarization and depolarization
71.55.Ht Other nonmetals
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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