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17 Jan 2000

Volume 76, Issue 3, pp. 253-392

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GaAs/AlGaAs distributed feedback quantum cascade lasers

W. Schrenk, N. Finger, S. Gianordoli, L. Hvozdara, G. Strasser, and E. Gornik

Appl. Phys. Lett. 76, 253 (2000); http://dx.doi.org/10.1063/1.125738 (3 pages) | Cited 25 times

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We report on the realization of distributed feedback quantum cascade lasers in the GaAs/AlGaAs material system. A metallized surface relief grating is used for feedback. Both single mode and double mode emission is observed at λ≈10 μm. The coupling coefficient is measured from the mode spacing for double mode emission to be 24 cm−1. The emission wave number can be tuned with the temperature at a rate of dν/dT ≈ 0.048 cm−1/K. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.60.Fc Modulation, tuning, and mode locking

Continuous-wave operation of λ = 3.25 μm broadened-waveguide W quantum-well diode lasers up to T = 195 K

W. W. Bewley, H. Lee, I. Vurgaftman, R. J. Menna, C. L. Felix, R. U. Martinelli, D. W. Stokes, D. Z. Garbuzov, J. R. Meyer, M. Maiorov, J. C. Connolly, A. R. Sugg, and G. H. Olsen

Appl. Phys. Lett. 76, 256 (2000); http://dx.doi.org/10.1063/1.125739 (3 pages) | Cited 65 times

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Mid-infrared (λ = 3.25 μm) broadened-waveguide diode lasers with active regions consisting of 5 type-II “W” quantum wells operated in continuous-wave (cw) mode up to 195 K. At 78 K, the threshold current density was 63 A/cm2, and up to 140 mW of cw output power was generated. A second structure with ten quantum wells operated up to 310 K in pulsed mode. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Pk Continuous operation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices

H. Kim, C. M. Gilmore, J. S. Horwitz, A. Piqué, H. Murata, G. P. Kushto, R. Schlaf, Z. H. Kafafi, and D. B. Chrisey

Appl. Phys. Lett. 76, 259 (2000); http://dx.doi.org/10.1063/1.125740 (3 pages) | Cited 146 times

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Aluminum-doped zinc oxide (AZO) thin films (∼3000 Å) with low electrical resistivity and high optical transparency have been grown by pulsed-laser deposition on glass substrates without a postdeposition anneal. Films were deposited at substrate temperatures ranging from room temperature to 400 °C in O2 partial pressures ranging from 0.1 to 50 mTorr. For 3000-Å-thick AZO films grown at room temperature in an oxygen pressure of 5 mTorr, the electrical resistivity was 8.7×10−4 Ω cm and the average optical transmittance was 86% in the visible range (400–700 nm). For 3000-Å-thick AZO films deposited at 200 °C in 5 mTorr of oxygen, the resistivity was 3.8×10−4 Ω cm and the average optical transmittance in the visible range was 91%. AZO films grown at 200 °C were used as an anode contact for organic light-emitting diodes. The external quantum efficiency measured from these devices was about 0.3% at a current density of 100 A/m2. © 2000 American Institute of Physics.
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78.66.Hf II-VI semiconductors
73.61.Ga II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.60.Jb Light-emitting devices
81.15.Fg Pulsed laser ablation deposition
81.05.Dz II-VI semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance

Time-resolved photoresponse of a gallium-doped germanium photoconductor using a variable pulse-width terahertz source

F. A. Hegmann, J. B. Williams, B. Cole, M. S. Sherwin, J. W. Beeman, and E. E. Haller

Appl. Phys. Lett. 76, 262 (2000); http://dx.doi.org/10.1063/1.125741 (3 pages) | Cited 10 times

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Picosecond to nanosecond-wide terahertz pulses are used to study the fast photoresponse of a gallium-doped germanium (Ge:Ga) photoconductor operating at 4.2 K. A recombination time of about 2 ns is observed in the time-resolved photoresponse. Laser-activated semiconductor reflection switches are used to “slice” the variable-width terahertz pulses from the quasicontinuous-wave output of a free-electron laser. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
72.40.+w Photoconduction and photovoltaic effects
78.47.-p Spectroscopy of solid state dynamics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
41.60.Cr Free-electron lasers

Relative electrical resistivities and poling of nonlinear optical polymeric waveguides

Tomáš Pliška, Joachim Meier, Arne Eckau, Vincent Ricci, Anne-Claire Le Duff, Michael Canva, George I. Stegeman, Paul Raymond, François Kajzar, and Kwok Pong Chan

Appl. Phys. Lett. 76, 265 (2000); http://dx.doi.org/10.1063/1.125742 (3 pages) | Cited 3 times

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A method based on Maker fringe measurements of nonlinear optical coefficients has been used to determine the relative dc electrical resistivities of a series of linear and nonlinear optical polymers. The method can be used to identify low resistivity linear cladding materials for optimized electric field poling of nonlinear optical polymeric waveguides. As an example of the application of the technique we have studied the resistivity of poly(methyl methacrylate)-polystyrene (PMMA-PS) copolymers with varying content of the two components. The resistivity of PMMA was found to be one order of magnitude lower than that of PS. © 2000 American Institute of Physics.
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42.70.Jk Polymers and organics
42.65.Wi Nonlinear waveguides
77.22.Ej Polarization and depolarization
73.61.Ph Polymers; organic compounds
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Photonic-crystal spot-size converter

Hideo Kosaka, Takayuki Kawashima, Akihisa Tomita, Takashi Sato, and Shojiro Kawakami

Appl. Phys. Lett. 76, 268 (2000); http://dx.doi.org/10.1063/1.125743 (3 pages) | Cited 28 times

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We have demonstrated a spot-size converter (SSC) that is made of photonic crystals (PCs) and has a conversion ratio of 10:1 for a 1-μm-wavelength light beam. Its real-spatial distribution was narrowed by intentionally broadening its wave vector distribution and increasing effective refractive index. The advantage of this PC-based SSC over conventional bulk-based SSC are compactness (monolithic integration), positional independence, and extremely deep depth of focus. This PC-SSC is a candidate for an interface between photonic-crystal waveguides and conventional optical waveguides. © 2000 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range

A. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, C. Agert, S. Leu, M. Hofmann, W. Stolz, and W. W. Rühle

Appl. Phys. Lett. 76, 271 (2000); http://dx.doi.org/10.1063/1.125744 (2 pages) | Cited 37 times

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The temperature dependence of the emission of a (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is investigated. We find laser emission over an extremely broad temperature range from 30 K up to 388 K. The laser threshold varies from 5 kW/cm2 at 373 K down to a minimum of 1 kW/cm2 at 180 K and increases again to 4 kW/cm2 at 30 K. Picosecond emission dynamics after femtosecond optical excitation is obtained with peak delays below 33 ps and pulse widths below 20 ps over the entire operation range. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

J. W. Yang, A. Lunev, G. Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, and R. Gaska

Appl. Phys. Lett. 76, 273 (2000); http://dx.doi.org/10.1063/1.125745 (3 pages) | Cited 48 times

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We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW) light-emitting diodes (LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor deposition growth procedure in selective areas defined by openings in a SiO2 mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 °C. The peak emission wavelengths are measured as a function of both dc and pulse bias current and plate temperature to estimate the thermal impedance. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.40.Hp Lithography, masks and pattern transfer

Switching dynamics between single-mode and dual-mode pulse emissions from a self-seeded laser diode

K. K. Chow and C. Shu

Appl. Phys. Lett. 76, 276 (2000); http://dx.doi.org/10.1063/1.125746 (3 pages) | Cited 4 times

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Spectrally selected, self-seeded pulses are generated from a Fabry–Perot laser diode in an external cavity containing a two-chromatic fiber grating. Electrical switching between single-mode and dual-mode operations is demonstrated by controlling the amplitude of the ac signal applied to the laser diode. The principle is based on carrier induced frequency chirp that determines the spectral overlap of the Fabry–Perot modes with the grating reflection band during the pulse buildup time. We also investigate the switching dynamics and show that the steady states can be reached after about five to six round-trip cycles. The buildup of single-mode emissions is slightly faster than that of the dual mode. © 2000 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Intracavity lens for low-divergence high-power laser diode operation

A. M. Rashed, K. A. Williams, P. J. Heard, R. V. Penty, and I. H. White

Appl. Phys. Lett. 76, 279 (2000); http://dx.doi.org/10.1063/1.125721 (3 pages) | Cited 2 times

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An intracavity lens has been integrated into a high-power tapered ridge-waveguide semiconductor laser diode. The lens is designed to compensate for the phase curvature of the incident mode on the output facet. This has led to improved linearity in the light–current characteristics of the device, showing an increase of up to 47% in power slope efficiency and a reduction of up to 17% in the full width at e−2 intensity of the far field pattern. © 2000 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

A wavelength multiplexer using cascaded three-dimensional vertical couplers

Bin Liu, Ali Shakouri, P. Abraham, and John E. Bowers

Appl. Phys. Lett. 76, 282 (2000); http://dx.doi.org/10.1063/1.125722 (3 pages) | Cited 7 times

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A four-channel wavelength multiplexer/demultiplexer for sparse wavelength division multiplexing was demonstrated using cascaded three-dimensional (3D) vertical couplers. 17 nm channel spacing with crosstalk less than 15 dB was achieved. Strong coupled vertical couplers were fabricated using wafer bonding to invert a conventionally processed epitaxial layer and bond to a new host substrate. This technology makes the fabrication of 3D photonic integrated circuits and the realization of multilevel optical interconnects possible. © 2000 American Institute of Physics.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.Ds Interconnects, including holographic interconnects
42.82.Et Waveguides, couplers, and arrays
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
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