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17 Jan 2000

Volume 76, Issue 3, pp. 253-392

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Current-induced realignment of magnetic domains in nanostructured Cu/Co multilayer pillars

J. A. Katine, F. J. Albert, and R. A. Buhrman

Appl. Phys. Lett. 76, 354 (2000); http://dx.doi.org/10.1063/1.125752 (3 pages) | Cited 39 times

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We have developed a nanofabrication technique to facilitate current-perpendicular-to-plane transport measurements on magnetic multilayer pillar structures with diameters as narrow as 100 nm—a size scale at which the reversal of individual domains within the ferromagnetic layers may be detected. When large currents are passed through such pillars, the Oersted field produced by the current can affect the orientation of the magnetic moments of the layers. In pillars ranging from 250 to 500 nm, a stack of alternating hard and soft ferromagnetic layers can controllably be switched between high and low resistance states via this mechanism. © 2000 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.47.De Giant magnetoresistance
75.60.Ch Domain walls and domain structure
75.50.Cc Other ferromagnetic metals and alloys
75.70.Kw Domain structure (including magnetic bubbles and vortices)
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Room-temperature thousandfold magnetoresistance change in MnSb granular films: Magnetoresistive switch effect

H. Akinaga, M. Mizuguchi, K. Ono, and M. Oshima

Appl. Phys. Lett. 76, 357 (2000); http://dx.doi.org/10.1063/1.125753 (3 pages) | Cited 30 times

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A huge positive magnetoresistance effect has been discovered in MnSb granular films. Granular film consisting of nanoscale MnSb dots that are grown on a sulfur-passivated GaAs (001) substrate by molecular-beam epitaxy, then covered with an Sb thin layer, exhibits magnetic-field-sensitive current–voltage characteristics. When a constant voltage, above the threshold value, is applied to the film, more than 1000% change in the current, which we term magnetoresistive switch, is driven by the magnetoresistance effect under a relatively low magnetic field (less than 0.5 T) at room temperature. © 2000 American Institute of Physics.
Show PACS
75.47.De Giant magnetoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
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