Using the concept for nonvolatile memories recently proposed by K. Shum, J. Q. Zhou, W. Zhang, L. F. Zeng, and M. C. Tamargo [Appl. Phys. Lett. 71, 2487 (1997)], a promising nonvolatile memory device has been designed and demonstrated using a III–V semiconductor quantum structure. Preliminary data on the device’s stability and reliability reveals that further improvements are possible on the cycling endurance and retention time. © 2000 American Institute of Physics.