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24 Jan 2000

Volume 76, Issue 4, pp. 397-519

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Demonstration of III–V semiconductor-based nonvolatile memory devices

Zhongwei Pan and Kai Shum

Appl. Phys. Lett. 76, 505 (2000); http://dx.doi.org/10.1063/1.125802 (3 pages) | Cited 4 times

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Using the concept for nonvolatile memories recently proposed by K. Shum, J. Q. Zhou, W. Zhang, L. F. Zeng, and M. C. Tamargo [Appl. Phys. Lett. 71, 2487 (1997)], a promising nonvolatile memory device has been designed and demonstrated using a III–V semiconductor quantum structure. Preliminary data on the device’s stability and reliability reveals that further improvements are possible on the cycling endurance and retention time. © 2000 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.05.Ea III-V semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices
84.30.Sk Pulse and digital circuits

Micromachined convective accelerometers in standard integrated circuits technology

Veljko Milanović, Edwin Bowen, Mona E. Zaghloul, Nim H. Tea, John S. Suehle, Beverly Payne, and Michael Gaitan

Appl. Phys. Lett. 76, 508 (2000); http://dx.doi.org/10.1063/1.125803 (3 pages) | Cited 18 times

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This letter describes an implementation of micromachined accelerometers in standard complimentary metal–oxide–semiconductor technology. The devices operate based on heat convection and consist of microheaters and thermocouple or thermistor temperature sensors separated by a gap which measure temperature difference between two sides of the microheater caused by the effect of acceleration on free gas convection. The devices show a small linearity error of <0.5% under tilt conditions (±90°), and <2% under acceleration to 7g(g ≡ 9.81 m/s2). Sensitivity of the devices is a nearly linear function of heater power. For operating power of ∼ 100 mW, a sensitivity of 115 μV/g was measured for thermopile configuration and 25 μV/g for thermistor configurations. Both types of devices are operable up to frequencies of several hundred Hz. © 2000 American Institute of Physics.
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85.30.Tv Field effect devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
07.10.Cm Micromechanical devices and systems
06.30.Gv Velocity, acceleration, and rotation
07.20.Dt Thermometers
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