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24 Jan 2000

Volume 76, Issue 4, pp. 397-519

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Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone

Akira Kurokawa, Ken Nakamura, Shingo Ichimura, and Dae Won Moon

Appl. Phys. Lett. 76, 493 (2000); http://dx.doi.org/10.1063/1.125798 (3 pages) | Cited 19 times

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We examined the structure around the interface of SiO2 and Si using medium-energy ion scattering spectroscopy (MEIS) to investigate the interfacial Si displacement of an ultrathin silicon dioxide formed by oxidation of a Si(100) substrate with atmospheric-pressure ozone at a substrate temperature of 375 °C. A thermally grown oxide with the same thickness as an ozone-formed oxide was also measured with MEIS for comparison. The ozone-formed oxide exhibited considerably less Si displacement in the oxide layers near the interface than a thermally grown oxide, which indicates that an ozone oxide is homogenous. These results explain well our previous findings that an ozone oxide exhibits a constant HF etching rate of silicon dioxide while a thermally grown oxide slows the etching rate near the interface. © 2000 American Institute of Physics.
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68.35.Ct Interface structure and roughness
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.Mq Oxidation
81.65.Cf Surface cleaning, etching, patterning

Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties

Seung-Hyun Kim, D. J. Kim, J.-P. Maria, A. I. Kingon, S. K. Streiffer, J. Im, O. Auciello, and A. R. Krauss

Appl. Phys. Lett. 76, 496 (2000); http://dx.doi.org/10.1063/1.125799 (3 pages) | Cited 23 times

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The properties of SrBi2Ta2O9 (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films grown on stable Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibit high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films synthesized on Pt/Ti/SiO2/Si. It is shown that severe diffusion of Ti from the Ti interlayer onto the surface of the Pt bottom electrode and the increased surface roughness of this electrode stack play key roles in degradation of SBT properties. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.80.Dj Domain structure; hysteresis
73.61.Ng Insulators
66.30.Ny Chemical interdiffusion; diffusion barriers
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

First principles study of Pb vacancies in PbTiO3

S. Pöykkö and D. J. Chadi

Appl. Phys. Lett. 76, 499 (2000); http://dx.doi.org/10.1063/1.125800 (3 pages) | Cited 30 times

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Electronic and ionic structures of lead vacancies in PbTiO3 were studied using an ab initio approach. Even though the lead vacancy is found to be an acceptor with stable charge states ranging from 2- to 4- it does not form a tightly bound defect pair with a double donor oxygen vacancy. The formation of distant and nearby lead-vacancy–oxygen-vacancy pairs is shown to be exothermic under certain growth conditions. © 2000 American Institute of Physics.
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71.55.Ht Other nonmetals
61.72.J- Point defects and defect clusters
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)

Electrical properties of ZrO2 gate dielectric on SiGe

T. Ngai, W. J. Qi, R. Sharma, J. Fretwell, X. Chen, J. C. Lee, and S. Banerjee

Appl. Phys. Lett. 76, 502 (2000); http://dx.doi.org/10.1063/1.125801 (3 pages) | Cited 2 times

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We report the electrical properties of a high dielectric constant (high-k) material, ZrO2, deposited directly on SiGe, without the use of a Si buffer layer or a passivation barrier. ZrO2 thin films of equivalent oxide thickness (EOT) down to 16.5 Å were deposited on strained SiGe layers by reactive sputtering. Results indicate that ZrO2 films on SiGe have good interfacial properties and low leakage currents. Sintering in forming gas at 350 °C for 1 h could further improve the film quality. Although threshold voltage stability and dielectric dispersion become a concern for thick ZrO2 films, thin ZrO2 films of EOT less than 20 Å exhibit excellent electrical properties making them a good candidate for SiGe applications. © 2000 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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