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31 Jan 2000

Volume 76, Issue 5, pp. 523-656

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Drift mobility of semiconductive La0.5Sr0.5CoO3 films measured using the traveling wave method

J. Yin, L. Wang, J. M. Liu, K. J. Chen, Z. G. Liu, and Q. Huang

Appl. Phys. Lett. 76, 580 (2000); http://dx.doi.org/10.1063/1.125823 (3 pages)

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The conductivity and the drift mobility of La0.5Sr0.5CoO3 films deposited on fused silica substrates at 650 °C by pulsed-laser deposition have been measured by using the traveling-wave method. At room temperature, La0.5Sr0.5CoO3 films with semiconductivity have a hole density of 1×1021 cm−3, and drift mobility of 0.01 cm2/V s. The films underwent a paraferromagnetic transition around 240 K. The hopping process and tunneling effect of small polarons may be responsible for the conductive behavior above the Curie temperature. © 2000 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
75.50.Pp Magnetic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
72.20.Ee Mobility edges; hopping transport
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.47.De Giant magnetoresistance

A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon

Björn Fischer and Karl R. Hofmann

Appl. Phys. Lett. 76, 583 (2000); http://dx.doi.org/10.1063/1.125824 (3 pages) | Cited 9 times

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A full-band Monte Carlo transport model for silicon is presented that achieves excellent quantitative agreement with the temperature, field, and crystal direction dependences of experimental electron and hole drift velocities from 20 to 500 K. The model is based on wave-vector-dependent phonon scattering rates, for which a unique set of only two empirical deformation potentials for each carrier type has been determined from the experiments. Numerical accuracy is obtained by a variable Brillouin zone discretization. We discuss discrepancies between different experimental low-field electron mobilities at 77 K showing that the value should be 26 100 cm2/(V s) instead of the often quoted 20 800 cm2/(V s). For holes, we show that the inclusion of inelastic intravalley acoustic phonons cannot be restricted to low temperatures, but is essential for a correct transport description even at room temperature. © 2000 American Institute of Physics.
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72.80.Cw Elemental semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations
02.50.Ng Distribution theory and Monte Carlo studies
02.70.Rr General statistical methods

Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices

J. L. Liu, G. Jin, Y. S. Tang, Y. H. Luo, K. L. Wang, and D. P. Yu

Appl. Phys. Lett. 76, 586 (2000); http://dx.doi.org/10.1063/1.125825 (3 pages) | Cited 32 times

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Raman scattering measurements were carried out in self-organized Ge quantum dot superlattices. The samples consisted of 25 periods of Ge quantum dots with different dot sizes sandwiched by 20 nm Si spacers, and were grown using solid-source molecular-beam epitaxy. Optical phonon modes were found to be around 300 cm−1, and a dependence of the Raman peak frequency on the size of dots was evidenced in good agreement with a prediction based on phonon confinement and strain effects. Acoustic phonons related to the Ge quantum dots have also been observed. © 2000 American Institute of Physics.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators

Two-dimensional growth of InSb thin films on GaAs(111)A substrates

K. Kanisawa, H. Yamaguchi, and Y. Hirayama

Appl. Phys. Lett. 76, 589 (2000); http://dx.doi.org/10.1063/1.125826 (3 pages) | Cited 20 times

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Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was formed from the early stage of the growth on the (111)A surface, and the mobilities and carrier concentrations of InSb on (111)A substrates suggested a low defect density due to confinement of the dislocations to the interface. © 2000 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Ct Interface structure and roughness
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Lk Linear defects: dislocations, disclinations
73.25.+i Surface conductivity and carrier phenomena
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance

1/f noise through the metal–nonmetal transition in percolating composites

A. J. Breeze, S. A. Carter, G. B. Alers, and M. B. Heaney

Appl. Phys. Lett. 76, 592 (2000); http://dx.doi.org/10.1063/1.125827 (3 pages) | Cited 11 times

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We have measured the 1/f noise through the metal–nonmetal transition in carbon black/polymer composites as a function of temperature and doping. At the electronic transition, the resistivity power spectrum Sρ varies as Sρ ∼ ρQ, with Q = 2.77, in agreement with classical three-dimensional percolation. At lower temperatures, a crossover to tunneling-dominated transport occurs with Sρ ∼ ln Sρ/ρ2. Our results show that 1/f noise can be a more sensitive technique than resistivity itself for probing transport behavior near a percolation-induced electronic transition. © 2000 American Institute of Physics.
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72.70.+m Noise processes and phenomena
71.30.+h Metal-insulator transitions and other electronic transitions
72.60.+g Mixed conductivity and conductivity transitions
72.80.Tm Composite materials

Defined crystallization of amorphous-silicon films using contact printing

Sanghoon Bae and Stephen J. Fonash

Appl. Phys. Lett. 76, 595 (2000); http://dx.doi.org/10.1063/1.125828 (3 pages) | Cited 9 times

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Patterned Ni layers are printed on amorphous-silicon (a-Si) films and, during this printing, the metal patterns induce lateral crystallization of the precursor a-Si layer. The printing process consists of simultaneously pressing the Ni printing plate to an a-Si layer and annealing at 550 °C. Printing times of 1 and 3 h are explored. The growth rate of the Ni-induced lateral crystallization is about 8 μm/h in this process. After this printing, Raman spectra show that the resulting polycrystalline-silicon (poly-Si) regions have the characteristic transverse-optical 519 cm−1 phonon peak typical of crystalline silicon. The nonprinted, noncrystallized a-Si areas have the Raman signature of a-Si; i.e., they do not have any peak. The resulting laterally crystallized Si area shows a morphological texture (i.e., a strip-like morphology) originating from the printed Ni area and growing in one direction in transmission electron microscope imaging. In terms of the selective area diffraction pattern (i.e., diffraction spot position and crystal structure), the signature of the area directly contacted by the Ni cannot be distinguished from that of the surrounding laterally crystallized silicon film. This printing approach can be used for channel crystallization/device isolation resulting in a saving of device fabrication steps. © 2000 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
61.72.Cc Kinetics of defect formation and annealing
78.66.Jg Amorphous semiconductors; glasses
78.30.Am Elemental semiconductors and insulators
78.35.+c Brillouin and Rayleigh scattering; other light scattering
68.55.-a Thin film structure and morphology
78.66.Db Elemental semiconductors and insulators
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