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31 Jan 2000

Volume 76, Issue 5, pp. 523-656

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Implementation of a three-quantum-bit search algorithm

Lieven M. K. Vandersypen, Matthias Steffen, Mark H. Sherwood, Costantino S. Yannoni, Gregory Breyta, and Isaac L. Chuang

Appl. Phys. Lett. 76, 646 (2000); http://dx.doi.org/10.1063/1.125846 (3 pages) | Cited 52 times

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We report the experimental implementation of Grover’s quantum search algorithm on a quantum computer with three quantum bits. The computer consists of molecules of 13C-labeled CHFBr2, in which the three weakly coupled spin-1/2 nuclei behave as the bits and are initialized, manipulated, and read out using magnetic resonance techniques. This quantum computation is made possible by the introduction of two techniques which significantly reduce the complexity of the experiment and by the surprising degree of cancellation of systematic errors which have previously limited the total possible number of quantum gates. © 2000 American Institute of Physics.
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03.67.Lx Quantum computation architectures and implementations
85.65.+h Molecular electronic devices
33.25.+k Nuclear resonance and relaxation

Delayed release of Li atoms from laser ablated lithium niobate

J. A. Chaos, R. W. Dreyfus, A. Perea, R. Serna, J. Gonzalo, and C. N. Afonso

Appl. Phys. Lett. 76, 649 (2000); http://dx.doi.org/10.1063/1.125847 (3 pages) | Cited 10 times

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The present vapor-phase optical (atomic) absorption measurements study the escape dynamics of Li atoms from a LiNbO3 target surface upon laser ablation in vacuum. The objective is to understand the low-Li content of LiNbO3 films prepared by pulsed laser deposition. A primary result is a delayed release of Li atoms, 2–20 μs after the laser pulse; they eject with a velocity of 6×105 cm s−1, which is consistent with an electronic ejection mechanism. The long emission period means there are almost no intraplume Li collisions in the gas phase and no forward focusing of the delayed released atoms. This appears to explain the low-Li content usually found in films grown in the normal direction. © 2000 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
81.15.Fg Pulsed laser ablation deposition
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Synthesis of GaN–carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere

Weiqiang Han, Philipp Redlich, Frank Ernst, and Manfred Rühle

Appl. Phys. Lett. 76, 652 (2000); http://dx.doi.org/10.1063/1.125848 (3 pages) | Cited 90 times

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A method using an arc discharge in a nitrogen atmosphere for synthesizing large quantities of gallium nitride (GaN)–Carbon composite nanotubes and GaN nanorods is reported. The reaction is achieved by a dc arc discharge between a graphite anode filled with a mixture of GaN, graphite, and nickel powders and a graphite cathode in a nitrogen atmosphere. The GaN are presented as rodlike fillings in the composite tubes and the isolated GaN nanorods have diameters in the range of 7–45 nanometers and a length of up to 40 μm. The outer graphitic shells of the composite carbon nanotubes have thicknesses ranging from 1 to 8 nm. It was found that the use of a nitrogen atmosphere plays a crucial role for the growth of the GaN nanorods fillings and the individual GaN nanorods. © 2000 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.05.ub Fullerenes and related materials
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
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