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31 Jan 2000

Volume 76, Issue 5, pp. 523-656

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Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

A. B. M. Almamun Ashrafi, Akio Ueta, Adrian Avramescu, Hidekazu Kumano, Ikuo Suemune, Young-Woo Ok, and Tae-Yeon Seong

Appl. Phys. Lett. 76, 550 (2000); http://dx.doi.org/10.1063/1.125851 (3 pages) | Cited 60 times

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A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buffer layer was found to lead to the growth of the zinc-blende ZnO films. Although the zinc-blende ZnO films were polycrystalline with columnar structures, they showed bright band-edge luminescence at room temperature. © 2000 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Dz II-VI semiconductors
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors

First-principles study of NH3 exposed Si(001)2×1: Relation between N 1s core-level shifts and atomic structure

G.-M. Rignanese and Alfredo Pasquarello

Appl. Phys. Lett. 76, 553 (2000); http://dx.doi.org/10.1063/1.125815 (3 pages) | Cited 33 times

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Using a first-principles approach, we assign N 1s core-level shifts at ammonium exposed Si(001)2×1 surfaces to definite bonding configurations of N atoms. Model structures are obtained by fully relaxing the atomic positions of N atoms in different bonding configurations. Calculated values of N 1s core-level shifts of N-Si3, N-Si2H, and N-SiH2 structural units show a linear dependence on the number of nearest-neighbor H atoms, in good agreement with data from photoemission experiments. Our results support the picture in which NH3 is adsorbed dissociatively as NH2 and H. © 2000 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.20.At Surface states, band structure, electron density of states

High-power quantum-dot lasers at 1100 nm

F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, and D. Bimberg

Appl. Phys. Lett. 76, 556 (2000); http://dx.doi.org/10.1063/1.125816 (3 pages) | Cited 40 times

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High-power semiconductor laser diodes based on multiple InGaAs/GaAs quantum-dot layers grown by metal–organic chemical-vapor deposition are demonstrated. The devices exhibit a peak power of 3 W (4.5 W) at 1100 nm (1068 nm), respectively, during pulsed operation at room temperature and show slope efficiencies of 57% (66%). © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors

Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer

Yefan Chen, Hang-Ju Ko, Soon-Ku Hong, and Takafumi Yao

Appl. Phys. Lett. 76, 559 (2000); http://dx.doi.org/10.1063/1.125817 (3 pages) | Cited 115 times

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By introducing a thin MgO buffer, layer-by-layer growth of ZnO epilayers on Al2O3(0001) substrates is achieved by plasma-assisted molecular beam epitaxy. The MgO buffer is very effective on the improvement of surface morphology during the initial growth stage, which eventually leads to an atomically flat surface. As a result, (3×3) surface reconstruction of ZnO is observed and reflection high-energy electron diffraction intensity oscillations are recorded. Structural analysis indicates that the twin defect with a 30° in-plane crystal orientation misaligned is completely eliminated, while the total dislocation density is reduced. Free exciton emissions at 3.3774 eV (XA) and 3.383 eV (XB) are observed in photoluminescence at 4.2 K further indicating the high quality of the resulting ZnO epilayers. © 2000 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Dz II-VI semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
61.72.Mm Grain and twin boundaries
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si

T. I. Kamins, R. Stanley Williams, Y. Chen, Y.-L. Chang, and Y. A. Chang

Appl. Phys. Lett. 76, 562 (2000); http://dx.doi.org/10.1063/1.125852 (3 pages) | Cited 69 times

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Silicon “nanowires” can be formed by chemical vapor deposition of Si onto Si substrates on which nanometer-scale, Ti-containing islands have been grown. At the growth temperatures used, the Ti-containing islands remain solid and anchored to the substrate, while the Si nanowires grow out from the islands, which remain at their bases. The nanowire growth mechanism, therefore, differs from the usual vapor-liquid-solid process and provides a potential route for the formation of oriented Si nanostructures or semiconductor-metal-semiconductor structures compatible with Si integrated circuits. © 2000 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Cy Elemental semiconductors
61.46.-w Structure of nanoscale materials
85.40.Sz Deposition technology
61.72.Cc Kinetics of defect formation and annealing

Ortho-molecular hydrogen in hydrogenated amorphous silicon

Tining Su, P. C. Taylor, Shenlin Chen, R. S. Crandall, and A. H. Mahan

Appl. Phys. Lett. 76, 565 (2000); http://dx.doi.org/10.1063/1.125818 (3 pages) | Cited 1 time

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Using a Jeener–Broekaert three-pulse sequence to measure directly the concentration of o-H2 by 1H nuclear magnetic resonance (NMR), we find that this concentration is one order of magnitude larger than that previously inferred from spin-lattice relaxation time (T1) measurements. At 300 K, this concentration of o-H2 contributes at most 30% to the narrow 1H NMR line attributed to hydrogen bonded to silicon. For a plasma-enhanced-chemical-vapor-deposition (PECVD) sample, two distinct values of T1 for o-H2 are found, only one of which contributes to the T1 for bonded hydrogen. In hot-wire-chemical-vapor-deposition samples, the line shape of o-H2 exhibits motional narrowing at lower temperatures, suggesting a more ordered structure than in a typical PECVD sample. © 2000 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
76.60.Es Relaxation effects
76.60.Lz Spin echoes
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Gc Amorphous semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

K. McDonald, M. B. Huang, R. A. Weller, L. C. Feldman, J. R. Williams, F. C. Stedile, I. J. R. Baumvol, and C. Radtke

Appl. Phys. Lett. 76, 568 (2000); http://dx.doi.org/10.1063/1.125819 (3 pages) | Cited 25 times

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The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼ 1013 cm−2 of N and annealing in NO incorporates ∼ 1014 cm−2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal: a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface. © 2000 American Institute of Physics.
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81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
61.72.Cc Kinetics of defect formation and annealing
61.72.S- Impurities in crystals
68.35.Dv Composition, segregation; defects and impurities
82.80.Jp Activation analysis and other radiochemical methods
66.30.Ny Chemical interdiffusion; diffusion barriers
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation

S. Whelan, J. A. Van den Berg, S. Zhang, D. G. Armour, and R. D. Goldberg

Appl. Phys. Lett. 76, 571 (2000); http://dx.doi.org/10.1063/1.125820 (3 pages) | Cited 7 times

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The redistribution of As during high-temperature annealing has been investigated as a function of the Si(100) substrate temperature (−120 °C, +25 °C, and +300 °C) during 2.5 keV implantation (to 1.5×1015atoms/cm2). Each implant produced a damaged near-surface region, the extent of which varied with implant temperature. Samples implanted at each temperature were annealed in a nitrogen ambient with a few percent oxygen for 10 s at 550, 925, and 975 °C. The changes in implant damage and dopant distributions both prior to and following annealing were investigated using medium energy ion scattering and secondary ion mass spectrometry. Transient enhanced diffusion (TED) of the dopant was observed for all implant temperatures after 925 °C annealing with the 25 °C implant showing the deepest diffusion. Between 925 and 975 °C annealing, the As diffusion rate in the 300 °C exceeded that of the 25 °C implant. Significantly, the −120 °C implant displayed less TED of As compared to the higher temperature implants following annealing at 975 °C. The results indicate that the diffusion is affected by the nature of the post-implant damage and the high arsenic concentrations. © 2000 American Institute of Physics.
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66.30.J- Diffusion of impurities
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

Jian-Yue Jin, Jiarui Liu, Paul A. W. van der Heide, and Wei-Kan Chu

Appl. Phys. Lett. 76, 574 (2000); http://dx.doi.org/10.1063/1.125821 (3 pages) | Cited 5 times

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We have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (Bn−, n = 1–3) ion implantation with the same atomic boron dose and energy. This Bn− series implantation can produce different amounts of damage with the same boron as-implanted profile and same amount of excess interstitials, hence a net effect of implantation damage can be extracted. Secondary ion mass spectrometry measurements indicate that for 1 keV boron atomic energy implantation and 10 s 1050 °C rapid thermal annealing, B1− implantation has less TED and less boron–interstitial clustering than B2− and B3− implantation. A boron trapping peak at the SiO2/Si interface is also speculated since the amount of boron trapped is correlated to the size of implanted ions. © 2000 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing
66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
61.72.Yx Interaction between different crystal defects; gettering effect

Characterization of InGaN thin films using high-resolution x-ray diffraction

L. Görgens, O. Ambacher, M. Stutzmann, C. Miskys, F. Scholz, and J. Off

Appl. Phys. Lett. 76, 577 (2000); http://dx.doi.org/10.1063/1.125822 (3 pages) | Cited 24 times

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Wurtzite InGaN thin films grown by metalorganic chemical vapor deposition on sapphire substrates with and without GaN buffer layers are investigated by high-resolution x-ray diffraction measurements. The structural quality, lattice constants, strain, and indium composition of 100 nm thick films with In concentrations up to 33% are evaluated by measuring symmetric (00.2) and asymmetric (20.5) reflexes. The quality of the InGaN layers with widely different biaxial stress is measured and compared. An analytical solution for the determination of the In content of strained epitaxial layers is introduced. The results show that neglecting the strain can result in a severe miscalculation of the In concentration. © 2000 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification
68.60.Bs Mechanical and acoustical properties
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