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14 Feb 2000

Volume 76, Issue 7, pp. 795-936

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Band alignment at the organic-inorganic interface

G. Koller, R. I. R. Blyth, S. A. Sardar, F. P. Netzer, and M. G. Ramsey

Appl. Phys. Lett. 76, 927 (2000); http://dx.doi.org/10.1063/1.125632 (3 pages) | Cited 25 times

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The band alignment of the bithiophene interface with a diverse range of substrates has been determined by a combination of ultraviolet photoemission and work function measurements. Not only is vacuum level alignment clearly shown to be invalid but also any sort of linear relationship between band alignment and substrate work function is shown not to be the case. Rather, the alignment is determined by the interface dipole, which is specific to the interaction at the inorganic-organic interface. The interface dipoles, which always appear, while dominated by the first monolayer interaction, are completed after two to three monolayers. As the ionization potentials of the films are shown to be constant, it is argued that a simple work function measurement, for an organic film on a particular substrate, quantifies the band alignment. © 2000 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.20.At Surface states, band structure, electron density of states
71.20.Rv Polymers and organic compounds
79.60.Jv Interfaces; heterostructures; nanostructures

Measuring average tip-sample forces in intermittent-contact (tapping) force microscopy in air

S. C. Fain, K. A. Barry, M. G. Bush, B. Pittenger, and R. N. Louie

Appl. Phys. Lett. 76, 930 (2000); http://dx.doi.org/10.1063/1.125633 (3 pages) | Cited 10 times

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A method to measure the average normal force on a surface produced by intermittent-contact (tapping) force microscopy is presented. This force is determined by measuring the average deflection of a calibrated piezoresistive cantilever in intermittent contact with an oscillating active cantilever. Results obtained with this method are presented for a two-state cantilever motion where the piezolever force is higher for the state with the lower amplitude of vibration. © 2000 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.10.Pz Instruments for strain, force, and torque

Oscillatory optical second-harmonic generation from Si(001) surface during thin-film epitaxy

E. S. Tok, R. W. Price, A. G. Taylor, and J. Zhang

Appl. Phys. Lett. 76, 933 (2000); http://dx.doi.org/10.1063/1.125634 (3 pages) | Cited 2 times

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Periodic variation in optical second-harmonic generation during homoepitaxial growth of silicon on singular Si(001) surface is reported. The period of the oscillations corresponds to bilayer growth, and the oscillations are correlated with the mechanism associated with a two-dimensional layer-by-layer growth mode. This mechanism is tentatively attributed to periodic domain coverage variations analogous to the oscillatory response in linear optical technique of reflectance anisotropy. The current experiment, however, cannot distinguish this mechanism from another based on anisotropic second-harmonic generation response with respect to steps. © 2000 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
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