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14 Feb 2000

Volume 76, Issue 7, pp. 795-936

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High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

X. Yang, J. B. Heroux, M. J. Jurkovic, and W. I. Wang

Appl. Phys. Lett. 76, 795 (2000); http://dx.doi.org/10.1063/1.125587 (3 pages) | Cited 27 times

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1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm2 was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T0) of 92 and 54 K for operating temperatures below and above 75 °C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/ °C. © 2000 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.60.Rn Relaxation oscillations and long pulse operation

Linear holographic recording at 514 nm in amorhpous As2S3

Boris Spektor, Michael Lisiansky, Joseph Shamir, Matvei Klebanov, and Victor Lyubin

Appl. Phys. Lett. 76, 798 (2000); http://dx.doi.org/10.1063/1.125588 (3 pages) | Cited 3 times

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It is shown that the linear recording of holographic gratings can be obtained at 514 nm in the amorphous arsenic trisulfide films. While strong nonlinearity was observed during recording at room temperature, these effects were eliminated when the recording was performed at temperatures below 275 K. To verify the linearity of the recording, the first- and second-order diffraction of a recorded grating were monitored during exposure. Since temperature appeared to be an important factor in obtaining the linearity of the recording, the experimental results support our qualitative model in which photoinduced structural changes, the main recording process, are deteriorated by a competitive relaxation process. © 2000 American Institute of Physics.
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42.70.Ln Holographic recording materials; optical storage media
42.40.Eq Holographic optical elements; holographic gratings
61.43.Dq Amorphous semiconductors, metals, and alloys
68.55.-a Thin film structure and morphology

Controlling the performance of GaAs–AlGaAs quantum-cascade lasers via barrier height modifications

L. R. Wilson, P. T. Keightley, J. W. Cockburn, M. S. Skolnick, J. C. Clark, R. Grey, and G. Hill

Appl. Phys. Lett. 76, 801 (2000); http://dx.doi.org/10.1063/1.125589 (3 pages) | Cited 21 times

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A series of GaAs/AlGaAs quantum-cascade lasers has been studied in which the confinement of the upper lasing level is systematically varied. This is achieved by modifying the aluminum composition, and hence the height, of a single barrier in each active region. Increasing the height of the barrier increases the upper laser level lifetime, while decreasing the optical transition matrix element. We find an optimum barrier composition (Al0.4Ga0.6As), with the sample containing this barrier exhibiting a significantly improved low-temperature threshold current density (3.8 kA/cm2) and peak power output (∼800 mW) relative to previously reported GaAs-based quantum-cascade lasers. The temperature performance of all the samples is very similar, indicating that thermal activation of electrons from the upper laser level is not the dominant factor limiting high-temperature operation. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

1.5-Mbit/s direct readout of line-and-space patterns using a scanning near-field optical microscopy probe slider with air-bearing control

F. Issiki, K. Ito, K. Etoh, and S. Hosaka

Appl. Phys. Lett. 76, 804 (2000); http://dx.doi.org/10.1063/1.125590 (3 pages) | Cited 11 times

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We have demonstrated 1.5-Mbit/s signal readout of a 0.25 μm line-and-space (L&S) pattern on a rotating disk by using a scanning near-field optical microscopy (SNOM) probe slider with air-bearing control. The light transmittance of the probe was greatly increased through direct irradiation of a focused light to a pyramidal probe tip. The bit rate of the signal was enhanced by two orders of magnitude compared to that of existing SNOM systems that use a tapered-fiber probe. The signal contrast, signal-to-noise ratio, and carrier-to-noise ratio for the 0.25 μm L&S pattern were 19%, 17 dB, and 37 dB, respectively. The estimated resolution limit of the probe corresponded to a L&S width of ∼ 130 nm. © 2000 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
42.79.Vb Optical storage systems, optical disks

Photorefractive index gratings in SnO2:SiO2 optical fibers

G. Brambilla, V. Pruneri, and L. Reekie

Appl. Phys. Lett. 76, 807 (2000); http://dx.doi.org/10.1063/1.125591 (3 pages) | Cited 22 times

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Permanent photorefractive gratings with considerable refractive index modulations ( ∼ 3×10−4) were written in silica optical fibers doped with very low levels of SnO2( ∼ 0.15 mol %) using ultraviolet (UV) laser radiation at 248 nm. The photoinduced refractive index change does not show any sign of saturation even for long exposure times (i.e., total fluence >20 kJ/cm2). A comparison with GeO2:SiO2 fibers shows that under similar UV intensities saturation takes place for shorter exposure time and comparable refractive index changes are obtainable for GeO2 concentrations ∼ 10 mol %. © 2000 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.81.Dp Propagation, scattering, and losses; solitons
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Dj Gratings
42.79.Hp Optical processors, correlators, and modulators

Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference

I. V. Kravetsky, I. M. Tiginyanu, Ralf Hildebrandt, Gerd Marowsky, D. Pavlidis, A. Eisenbach, and H. L. Hartnagel

Appl. Phys. Lett. 76, 810 (2000); http://dx.doi.org/10.1063/1.125592 (3 pages) | Cited 5 times

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GaN layers grown by metalorganic chemical-vapor deposition were characterized by optical second- and third-harmonic generation techniques. The angular dependence of the second-harmonic intensity in transmission showed a c-textured growth of the GaN layers on the sapphire substrates. The measured ratios d33/d15 and d33/d31 are equal to −2.02 and −2.03, respectively, which is indicative of a wurzite structure of the GaN layers. The measured d33 is 33 times that of the d11 of quartz. Fine oscillations were observed in the measured second- and third-harmonic angular dependencies that are explained by taking into account the interference of the fundamental beam in the GaN/sapphire structure. © 2000 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Polarization control of vertical-cavity surface-emitting lasers by electro-optic birefringence

Min Soo Park, Byung Tae Ahn, Byueng-Su Yoo, Hye Yong Chu, Hyo-Hoon Park, and C. J. Chang-Hasnain

Appl. Phys. Lett. 76, 813 (2000); http://dx.doi.org/10.1063/1.125593 (3 pages) | Cited 8 times

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Polarization of vertical-cavity surface-emitting lasers (VCSELs) grown on (001) GaAs substrate has been controlled by electro-optic birefringence. Birefringence was induced at the top distributed Bragg reflector by applying an electric field along the [001] direction. The cavity resonance of the polarized light along the [110] or [110] direction shifted to shorter and longer wavelength, depending on the direction of the applied electric field. By varying the direction and strength of the electric field, we actively controlled the polarization of VCSELs. The dominant polarization mode occurred along the [110] direction for the negative electric field, and along the [110] direction for the positive electric field. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.25.Ja Polarization
78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors

Mode switching in shear-strained and modulated photonic lattices by vertical-cavity surface-emitting laser arrays by means of injection locking

T. Fishman, A. Hardy, and E. Kapon

Appl. Phys. Lett. 76, 816 (2000); http://dx.doi.org/10.1063/1.125594 (3 pages) | Cited 2 times

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Mode switching in shear-strained (i.e., laterally shifted) lattices of vertical cavity surface emitting laser arrays by means of injection locking is theoretically demonstrated. Switching between four- and six-lobed far-fields modes is examined near the critical value of lattice strain. Switching between localized modes of modulated lattices is also considered, and, as an example, mode switching of randomly disordered lattice is demonstrated. Both the shear-strained and the random disordered lattices are shown to be ideal candidates for all-optical switching devices. © 2000 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.50.-p Quantum optics
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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