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21 Feb 2000

Volume 76, Issue 8, pp. 943-1075

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Stable avalanche-photodiode operation of ZnSe-based p+–n structure blue-ultraviolet photodetectors

Hitoshi Ishikura, Tomoki Abe, Nariyuki Fukuda, Hirofumi Kasada, and Koshi Ando

Appl. Phys. Lett. 76, 1069 (2000); http://dx.doi.org/10.1063/1.125941 (3 pages) | Cited 15 times

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Show Abstract
A high-field operation of p+–n structure blue-ultraviolet photodetectors has been studied using ZnSe-based II–VI wide-band-gap compound semiconductors grown by molecular-beam epitaxy (MBE). With an improved crystal quality on macrodefects (dislocations and stacking faults) during an initial MBE growth as well as an optimized device structure including a complete superlattice ohmic-contact layer, a stable high electric-field operation up to 8×105 V/cm is established. It is demonstrated that the p+–n ZnSe photodiodes have shown a stable avalanche-photodiode operation with a large avalanche gain of G = 60 in the blue-ultraviolet region at room temperature. © 2000 American Institute of Physics.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.20.Ht High-field and nonlinear effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Nn Stacking faults and other planar or extended defects
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