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21 Feb 2000

Volume 76, Issue 8, pp. 943-1075

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A model for fatigue in ferroelectric perovskite thin films

Matthew Dawber and J. F. Scott

Appl. Phys. Lett. 76, 1060 (2000); http://dx.doi.org/10.1063/1.125938 (3 pages) | Cited 183 times

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An analytic expression in closed form is given for “fatigue,” the dependence of P(N), the switched charge per unit area P versus switching event number N, in ABO3 perovskite structure ferroelectric thin films is given. The analysis is based upon Arlt’s model for fatigue in bulk perovskites, which involves preferential electromigration of oxygen vacancies to sites parallel to the electrode–ferroelectric interface plane, together with some arguments by Brennan on the effectiveness of such defect planes in pinning domain walls. The model is applied to PZT/Pt with no adjustable parameters and yields in complete agreement with experimental data the dependence of P(N) at different frequencies, different voltages, and different temperatures. Notably, unlike other proposals in the literature, the model does not involve any charge injection from the electrodes. © 2000 American Institute of Physics.
Show PACS
77.80.Fm Switching phenomena
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.80.Dj Domain structure; hysteresis
66.30.Qa Electromigration
61.72.J- Point defects and defect clusters

Compositionally step-varied (Pb, Ca)TiO3 thin films with enhanced dielectric and ferroelectric properties

Dinghua Bao, Liangying Zhang, and Xi Yao

Appl. Phys. Lett. 76, 1063 (2000); http://dx.doi.org/10.1063/1.125939 (3 pages) | Cited 18 times

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Compositionally step-varied (Pb, Ca)TiO3 thin films were prepared on platinum-coated silicon substrates by a monoethanolamine-modified sol-gel technique. The dielectric constant and dissipation factor were found to be 342 and 0.019, respectively, for thin films of 0.6μm in thickness annealed at 550 °C for 60 min. The remanent polarization and coercive field were 37.7 μC/cm2 and 60.4 kV/cm, respectively. The leakage current was 1.31×10−7 A/cm2 at the voltage of 5 V. The compositionally step-varied (Pb, Ca)TiO3 thin films had enhanced dielectric and ferroelectric properties which were suitable for various device applications. © 2000 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.Nq Composition and phase identification

Comparison of memory effect between YMnO3 and SrBi2Ta2O9 ferroelectric thin films deposited on Si substrates

Ho Nyung Lee, Yong Tae Kim, and Sung Ho Choh

Appl. Phys. Lett. 76, 1066 (2000); http://dx.doi.org/10.1063/1.125940 (3 pages) | Cited 30 times

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For the ferroelectric gate-type capacitors, we have fabricated Pt/YMnO3(YMO)/Si and Pt/SrBi2Ta2O9(SBT)/Si structures. We have used the highly c-axis oriented hexagonal YMO thin films (ϵr ≈ 19) and the polycrystalline SBT thin films (ϵr ≈ 150) with a dominant (115) orientation, respectively. The memory effect resulting from the ferroelectric switching properties is investigated as a function of the dielectric constant of ferroelectric thin films with 150 nm in thickness. About 3 times wider memory window is obtained by using a relatively low dielectric constant of YMO than that using a relatively high dielectric constant of SBT. Typical memory windows of the Pt/YMO/Si and the Pt/SBT/Si capacitors are 1.24 and 0.34 V, respectively, at a gate voltage of 5 V. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.55.-g Dielectric thin films
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
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