APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

21 Feb 2000

Volume 76, Issue 8, pp. 943-1075

Return to All Sections
back to top
RSS Feeds

Bulk and surface recombination in InAs/AlAs0.16Sb0.84 3.45 μm light emitting diodes

M. J. Kane, G. Braithwaite, M. T. Emeny, D. Lee, T. Martin, and D. R. Wright

Appl. Phys. Lett. 76, 943 (2000); http://dx.doi.org/10.1063/1.125911 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A study of the light generation efficiency of a series of InAs/AlAs0.16Sb0.84 light emitting diodes with p-type InAs active layers is reported. The bulk low-injection radiative efficiency of the p-type material is shown to be as high as 24% at a hole concentration of 1.5×1017 cm−3 but to decrease with increasing hole concentration in a manner consistent with the dominant low-injection nonradiative processes being Auger processes with two holes in their initial states and a total rate constant of 2×10−28 cm6 s−1. The maximum internal low-drive quantum efficiency achieved in the light emitting diodes is shown to be limited by interface recombination at the InAs/AlAs0.16Sb0.84 heterojunction and reabsorption in the active layer in addition to the bulk nonradiative processes in the InAs. A maximum value of ∼9% is achieved. © 2000 American Institute of Physics.  
Show PACS
85.60.Jb Light-emitting devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena

Blue emitting Sr2Ga2S5:Ce phosphor thin films grown by multisource deposition

Shinji Okamoto, Kastu Tanaka, and Youji Inoue

Appl. Phys. Lett. 76, 946 (2000); http://dx.doi.org/10.1063/1.125900 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Blue emitting Sr2Ga2S5:Ce phosphor thin film has been first grown by multisource deposition. The evaporating source materials are Sr metal and Ga2S3 compound, and the dopant is CeCl3. This polycrystalline thin film shows the single orientation of (004). The SrS thin film is a buffer layer underneath the Sr2Ga2S5 thin film and is necessary for growth. The photoluminescence spectrum by excitation of the UV light at 290 nm is a broad band with two peaks at 443 and 484 nm, that is originated from 2D–4F5/2,7/2 transitions of Ce3+ ion. The emission is a saturated blue color and the Commission International de l’Eclairage chromaticity coordinates are x = 0.15 and y = 0.12. © 2000 American Institute of Physics.
Show PACS
78.55.Hx Other solid inorganic materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
78.66.Nk Insulators

Saturation effects in Y2SiO5:Tb under low-voltage excitation

C. Stoffers, R. Y. Lee, J. Penczek, B. K. Wagner, and C. J. Summers

Appl. Phys. Lett. 76, 949 (2000); http://dx.doi.org/10.1063/1.125901 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Low-voltage field emission device phosphors that are excited at high current densities often exhibit brightness saturation with increasing current. The physical processes responsible for saturation can be complex, with several mechanisms contributing, including ground state depletion and excited energy transfer. A two-level model, in conjunction with cathodoluminescence brightness and transient measurements, is used to show the influence of ground state depletion and thermal quenching on the saturation behavior of Y2SiO5:Tb under low-voltage excitation. © 2000 American Institute of Physics.
Show PACS
78.60.Hk Cathodoluminescence, ionoluminescence

Lightwave propagation through a 120° sharply bent single-line-defect photonic crystal waveguide

Masatoshi Tokushima, Hideo Kosaka, Akihisa Tomita, and Hirohito Yamada

Appl. Phys. Lett. 76, 952 (2000); http://dx.doi.org/10.1063/1.125902 (3 pages) | Cited 108 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have demonstrated 1.55 μm wavelength lightwave propagation through a 120° sharply bent waveguide formed in a triangular-lattice two-dimensional photonic crystal (2D PC). Such propagation has not previously been experimentally confirmed. The photonic crystal was fabricated in a silicon-on-insulator (SOI) wafer with the top silicon layer of the wafer used as a core layer. A 877-μm-long single-line-defect waveguide was formed in the PC with a sharp 120° bend near the middle of the waveguide. A tapered-hemispherical-end fiber was coupled to the input end of the waveguide for the light input, and the output from the other end of the waveguide was directly observed by scanning its near-field profile with another tapered-hemispherical-end fiber. © 2000 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers

Blue light generation in an external ring cavity using both cavity and grating feedback

X. G. Sun, G. W. Switzer, and J. L. Carlsten

Appl. Phys. Lett. 76, 955 (2000); http://dx.doi.org/10.1063/1.125903 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A simple scheme for the efficient frequency doubling of a Fabry–Perot diode laser in a bow tie ring cavity is described. By feeding back the ring cavity transmission into the laser after reflection off a grating, the diode laser operates in single mode and the frequency locks to the cavity resonance. Using a simple analytic form of the beam parameters for the ring cavity, the optimum cavity configuration is found for a high degree of mode matching between the diode output beam and the ring cavity. © 2000 American Institute of Physics.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings

Bipolar transport organic light emitting diodes with enhanced reliability by LiF doping

Vi-En Choong, Song Shi, Jay Curless, and Franky So

Appl. Phys. Lett. 76, 958 (2000); http://dx.doi.org/10.1063/1.125904 (3 pages) | Cited 21 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An electrode contact scheme based on the use of an organic LiF alloy is investigated. The performance of organic light emitting diodes (OLED) with this contact scheme in both heterojunction and bipolar transport/emitting layer (BTEL) OLED structures are compared with their counterparts with LiF buffer layers. The organic LiF contact scheme improved device reliability of BTEL OLEDs by 32% to 92 500 h while adversely affecting device reliability of heterojunction OLEDs. © 2000 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
61.72.up Other materials

Peculiar noise properties of phonons generated by femtosecond laser pulses in antimony

O. V. Misochko, K. Kisoda, K. Sakai, and S. Nakashima

Appl. Phys. Lett. 76, 961 (2000); http://dx.doi.org/10.1063/1.125905 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In femtosecond pump-probe experiments on antimony, we have detected coherent oscillations that exhibit phase-dependent noise. The Fourier transforms of the coherent amplitude and its variance show that the two fluctuate at different frequencies, suggesting that the phonons created in the pump-probe experiment are of a squeezed nature. © 2000 American Institute of Physics.
Show PACS
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.47.-p Spectroscopy of solid state dynamics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Accurate determination of quasi-Fermi-level separation of semiconductor lasers

Linzhang Wu

Appl. Phys. Lett. 76, 964 (2000); http://dx.doi.org/10.1063/1.125906 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
For characterization of semiconductor lasers, quasi-Fermi-level separation is a critical parameter due to its relationship with carrier density and gain. Its determination should be made with accuracy within ±10 meV. In this letter, we report a simple technique to accurately measure the quasi-Fermi-level separation, photon energy at gain peak, and intrinsic optical loss for a given current. Through theoretical calculation and experimental results, we believe that the quasi-Fermi-level separation measured by our technique is accurate to ±0.5 meV. © 2000 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
81.05.Ea III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
71.20.Nr Semiconductor compounds
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close