APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

28 Feb 2000

Volume 76, Issue 9, pp. 1083-1210

Page 1 of 2 Pages Next Page | Jump to Page
back to top
RSS Feeds

Photon noise and correlations in semiconductor cascade lasers

Farhan Rana and Rajeev J. Ram

Appl. Phys. Lett. 76, 1083 (2000); http://dx.doi.org/10.1063/1.125946 (3 pages)

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A comprehensive model for photon noise and correlations in semiconductor cascade lasers is presented. Photon emission events in different gain sections of cascade lasers are correlated. These correlations are found to be positive and arise because the gain sections are connected electrically. The scaling of photon correlations and intensity noise with the number of cascade sections is discussed. The model presented in this letter is applicable to a variety of cascade laser structures including bipolar interband cascade lasers and unipolar intersubband cascade lasers. For comparison, photon noise and correlations in parallel lasers arrays are also discussed. © 2000 American Institute of Physics.
Show PACS
42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Poling of soda-lime glass for hybrid glass/polymer electro-optic modulators

Y. Enami, P. Poyhonen, D. L. Mathine, A. Bashar, P. Madasamy, S. Honkanen, B. Kippelen, N. Peyghambarian, S. R. Marder, A. K-Y. Jen, and J. Wu

Appl. Phys. Lett. 76, 1086 (2000); http://dx.doi.org/10.1063/1.125947 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on a poling process of soda-lime glasses that reduces their surface conductivity by five orders of magnitude. We show that this process enables the in-plane poling of high Tg (180 °C) electro-optic (EO) polymers coated on ion-exchanged channel waveguides fabricated in soda-lime glasses for hybrid modulators. © 2000 American Institute of Physics.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
42.70.Ce Glasses, quartz
42.70.Jk Polymers and organics
73.25.+i Surface conductivity and carrier phenomena
42.79.Gn Optical waveguides and couplers
42.86.+b Optical workshop techniques

Soft proton exchange on periodically poled LiNbO3: A simple waveguide fabrication process for highly efficient nonlinear interactions

L. Chanvillard, P. Aschiéri, P. Baldi, D. B. Ostrowsky, M. de Micheli, L. Huang, and D. J. Bamford

Appl. Phys. Lett. 76, 1089 (2000); http://dx.doi.org/10.1063/1.125948 (3 pages) | Cited 22 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a simple fabrication process for realizing waveguides on periodically poled lithium niobate which preserves both the nonlinearity and the domain inversion. This so-called soft proton exchange has been used to generate highly efficient optical parametric fluorescence in the 1.48–2.01 μm region using a pump around 830 nm. The measured normalized efficiency is 130% W−1 cm−2 for an effective interaction length of 1.3 cm. This experimental figure is very close to the maximum theoretically predicted value of 140% W−1 cm−2. © 2000 American Institute of Physics.
Show PACS
42.65.Wi Nonlinear waveguides
42.82.Et Waveguides, couplers, and arrays
42.86.+b Optical workshop techniques
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
42.65.Yj Optical parametric oscillators and amplifiers
78.55.Hx Other solid inorganic materials
42.79.Gn Optical waveguides and couplers
82.39.Wj Ion exchange, dialysis, osmosis, electro-osmosis, membrane processes

Single-mode tunable, pulsed, and continuous wave quantum-cascade distributed feedback lasers at λ ≅ 4.6–4.7 μm

Rüdeger Köhler, Claire Gmachl, Alessandro Tredicucci, Federico Capasso, Deborah L. Sivco, S. N. George Chu, and Alfred Y. Cho

Appl. Phys. Lett. 76, 1092 (2000); http://dx.doi.org/10.1063/1.125987 (3 pages) | Cited 31 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-mode tunable quantum-cascade distributed feedback lasers emitting at 4.6–4.7 μm wavelength are reported. The lasers employ strained heterostructure material with global strain compensation to provide the large band offset needed for high-performance short wavelength operation. Pulsed, continuously tunable single-mode emission is achieved from 90 to 300 K with a tuning range of 65 nm. Peak output power levels of 100 mW at room temperature are obtained. In continuous-wave operation, current tunable single-mode emission is demonstrated around liquid-nitrogen temperature with a tuning range of 20 nm (over a current range of 450 mA). The maximum output power in continuous wave at 80 K is 150 mW. © 2000 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.35.Gy Mechanical properties; surface strains
42.60.Pk Continuous operation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Spatial beam switching and bistability in a diode ring laser

M. F. Booth, A. Schremer, and J. M. Ballantyne

Appl. Phys. Lett. 76, 1095 (2000); http://dx.doi.org/10.1063/1.125949 (3 pages) | Cited 17 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report bistable switching of the output direction in certain triangular diode ring lasers. These lasers operate unidirectionally at large drive currents, with up to 98% of the output power emerging from either the clockwise or the counterclockwise direction. The preferred direction can switch back and forth, with a large hysteresis loop, as the drive current is varied. Up to 20 mW of optical power changes direction at each switch. We propose an explanation based on the theory of two-mode competition via gain saturation. © 2000 American Institute of Physics.
Show PACS
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Temperature dependence of the responsivity of II–VI ultraviolet photodiodes

I. K. Sou, Z. H. Ma, Z. Q. Zhang, and G. K. L. Wong

Appl. Phys. Lett. 76, 1098 (2000); http://dx.doi.org/10.1063/1.125950 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High-temperature dependence, up to 150 °C, of the photoresponsivity of ZnS, ZnSTe, and ZnSSe photodiodes was investigated in this study. It was found that, in general, the responsivity at higher temperatures will shift to longer wavelengths because of band-gap narrowing. A remarkable observation is that the near-band-edge responsivities of these diodes increase at higher temperature. We believe that this observation is attributed to the change of the density-of-state distribution due to lattice expansion at high temperatures, and a simplified model is used to illustrate this hypothesis. © 2000 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Pw Imaging detectors and sensors
71.20.Nr Semiconductor compounds
back to top
RSS Feeds

Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)

R. Rudolph, Y. Tomm, C. Pettenkofer, A. Klein, and W. Jaegermann

Appl. Phys. Lett. 76, 1101 (2000); http://dx.doi.org/10.1063/1.125951 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces was investigated with photoemission and low-energy electron diffraction (LEED). GaSe films grow with their c axis perpendicular to the GaAs(110) surface. LEED patterns after initial film growth are a superposition of rectangular GaAs:Se spots and two hexagonal domains rotated by ±5° with respect to the GaAs 〈001〉 axis. At higher film thickness a hexagonal LEED pattern with GaSe 〈120〉 ‖ GaAs 〈001〉 is obtained. © 2000 American Institute of Physics.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.05.Hd Other semiconductors
79.60.Dp Adsorbed layers and thin films

Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures

L. González, J. M. García, R. García, F. Briones, J. Martínez-Pastor, and C. Ballesteros

Appl. Phys. Lett. 76, 1104 (2000); http://dx.doi.org/10.1063/1.125952 (3 pages) | Cited 76 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have studied the influence of InP buffer-layer morphology in the formation of InAs nanostructures grown on InP(001) substrates by solid-source molecular-beam epitaxy. Our results demonstrate that when InP buffer layers are grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like structures are formed, whereas InP buffer layers grown by MBE produce quantum-wire-like structures. The optical properties of these corrugated structures make them potential candidates for their use in light-emitting devices at 1.55 μm. © 2000 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Short-range order in ultrathin film titanium dioxide studied by Raman spectroscopy

V. V. Yakovlev, G. Scarel, C. R. Aita, and S. Mochizuki

Appl. Phys. Lett. 76, 1107 (2000); http://dx.doi.org/10.1063/1.125953 (3 pages) | Cited 37 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
It is demonstrated here that nonresonant Raman spectroscopy can be used for unequivocal determination of short-range order in ultrathin films, using different structures of titanium dioxide as the model system. Titania films as thin as 7 nm sputter deposited on 〈111〉 Si have been analyzed and their phase content determined. © 2000 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
78.30.Hv Other nonmetallic inorganics
78.66.Nk Insulators

Rectangular nanovoids in helium-implanted and thermally annealed MgO(100)

B. J. Kooi, A. van Veen, J. Th. M. De Hosson, H. Schut, A. V. Fedorov, and F. Labohm

Appl. Phys. Lett. 76, 1110 (2000); http://dx.doi.org/10.1063/1.125954 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Cleaved MgO(100) single crystals were implanted with 30 keV 3He ions with doses varying from 1×1019 to 1×1020 m−2 and subsequently thermally annealed from 100 to 1100 °C. Transmission electron microscopy observations revealed the existence of sharply rectangular nanosize voids at a depth slightly shallower than the helium-implantation range. Monitoring of the defect depth profile and the retained amount of helium was performed by positron-beam analysis and neutron depth profiling, respectively. © 2000 American Institute of Physics.
Show PACS
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.82.Ms Insulators
61.72.up Other materials
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.S- Impurities in crystals

Structural characterization and strain relaxation in porous GaN layers

M. Mynbaeva, A. Titkov, A. Kryganovskii, V. Ratnikov, K. Mynbaev, H. Huhtinen, R. Laiho, and V. Dmitriev

Appl. Phys. Lett. 76, 1113 (2000); http://dx.doi.org/10.1063/1.125955 (3 pages) | Cited 40 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Surface and subsurface structures of porous GaN prepared by anodizing epitaxial GaN layers grown on SiC substrates are investigated by atomic-force microscopy. Comparison of the images of the porous GaN surfaces with those taken on planes cleft perpendicular to the surface shows that the pores are formed along the boundaries of columnar structures of the original GaN films. X-ray investigations show that the porous GaN has less residual stresses than the initial GaN epitaxial layers. Use of porous GaN as a buffer layer for growth of low-stress GaN is proposed. © 2000 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
61.43.Gt Powders, porous materials
68.60.Bs Mechanical and acoustical properties
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.35.B- Structure of clean surfaces (and surface reconstruction)

Synthesis and optical properties of gallium arsenide nanowires

Xiangfeng Duan, Jianfang Wang, and Charles M. Lieber

Appl. Phys. Lett. 76, 1116 (2000); http://dx.doi.org/10.1063/1.125956 (3 pages) | Cited 121 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Gallium arsenide (GaAs) nanowires have been synthesized in bulk quantities and high purity by laser-assisted catalytic growth. Field-emission scanning electron microscopy and transmission electron microscopy investigations show that the GaAs nanowires are produced in >90% yield, are single crystals with 〈111〉 growth axes, and have diameters varying from three to tens of nanometers, and lengths extending to tens of micrometers. Photoluminescence (PL) measurements made on individual GaAs nanowires show large blueshifts in the PL peak position compared to bulk GaAs, and are consistent with strong quantum confinement. The implications of these results are discussed. © 2000 American Institute of Physics.
Show PACS
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
61.46.-w Structure of nanoscale materials
81.15.Fg Pulsed laser ablation deposition

Effect of hydrogen etching on 6H SiC surface morphology studied by reflection high-energy positron diffraction and atomic force microscopy

A. Kawasuso, K. Kojima, M. Yoshikawa, H. Itoh, and K. Narumi

Appl. Phys. Lett. 76, 1119 (2000); http://dx.doi.org/10.1063/1.125957 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Hydrogen-etched 6H SiC (0001) surfaces have been studied by reflection high-energy positron diffraction and atomic force microscopy. It was found that residual damage on the surfaces were effectively removed by the hydrogen etching as compared to the HF etching after the oxidation. The hydrogen-etched surfaces were atomically flat. After the oxidation following the hydrogen etching, the surface roughness was found to increase and an anomalous dip structure appeared in the rocking curve of the reflection high-energy positron diffraction. © 2000 American Institute of Physics.
Show PACS
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Hd Other semiconductors
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing

Photothermal spectroscopy using multilayer cantilever for chemical detection

Guangming Li, Larry W. Burggraf, and William P. Baker

Appl. Phys. Lett. 76, 1122 (2000); http://dx.doi.org/10.1063/1.125988 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photothermal spectroscopy is demonstrated using a high-aspect-ratio multilayer cantilever to measure adsorbed dimethyl methylphosphonate, which has an optical absorbance of ∼ 10−5 in the near infrared range. Detection sensitivity was 160 pW for a reed of 6 mm in length, 2 mm in width, and 10 μm. Sensitivity of the cantilever is compared to a thermal diffusion model that accounts for conduction loss through the cantilever clamp and to air along the length of the cantilever surface.
Show PACS
82.80.Kq Energy-conversion spectro-analytical methods (e.g., photoacoustic, photothermal, and optogalvanic spectroscopic methods)
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Anisotropic growth of single-crystal graphite plates by nickel-assisted microwave-plasma chemical-vapor deposition

Teresa Badzian, Andrzej Badzian, Rustum Roy, and Shang-Cong Cheng

Appl. Phys. Lett. 76, 1125 (2000); http://dx.doi.org/10.1063/1.125958 (3 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Growth of single-crystal graphite free-standing plates has been achieved by a microwavehydrogen-plasma etching of graphite powder and nickel mesh. The plates resemble a knife blade and grow in the 〈1math00〉 direction with long crystals exceeding 100 μm. Hexagonal growth features at the edges and electron diffraction patterns confirm the single-crystal nature of these ultrathin plates. Electron microprobe and Raman spectroscopy indicate the presence of graphite. Diamond crystals nucleate on these plates and they grow simultaneously. We suggest that the paradoxical growth of graphite in a hydrogen plasma, under conditions in which graphite is usually etched away, is possible because of a protective coating by a Ni–C–H phase. This thin coating allows for transport of carbon atoms from the gas phase to the growing graphite surface. © 2000 American Institute of Physics.
Show PACS
81.05.ub Fullerenes and related materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
68.55.-a Thin film structure and morphology
78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators

Fabricating nanometer-scale Co dot and line arrays on Cu(100) surfaces

S. L. Silva, C. R. Jenkins, S. M. York, and F. M. Leibsle

Appl. Phys. Lett. 76, 1128 (2000); http://dx.doi.org/10.1063/1.125959 (3 pages) | Cited 30 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have templated Cu(100) surfaces with self-assembled arrays of atomic nitrogen islands and then used these islands as masks for Co growth. This method of nanolithography enables the creation of Co dot arrays with dot densities 4×1012 cm−2 (27 teradots/in.2). Adjusting the nitrogen coverage also enabled the creation of arrays of Co lines spaced 10 nm (0.01 μm) apart. © 2000 American Institute of Physics.
Show PACS
81.05.Bx Metals, semimetals, and alloys
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Cc Other ferromagnetic metals and alloys
back to top
RSS Feeds

Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy

K. S. Zhuravlev, A. I. Toropov, T. S. Shamirzaev, and A. K. Bakarov

Appl. Phys. Lett. 76, 1131 (2000); http://dx.doi.org/10.1063/1.125960 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a photoluminescence study of high-purity AlxGa1−xAs layers grown by molecular-beam epitaxy over the 0 ⩽ x ⩽ 0.295 composition range. The intense excitonic line dominates in the photoluminescence spectra of the layers. The full width at half maximum of the excitonic line is in excellent agreement with values calculated by Lee and Bajaj [J. Appl. Phys. 73, 1788 (1993)] for perfectly random alloys, and in the spectra of the layers with AlAs fractions of x = 0.15 and x = 0.209 it equals to 1.24 and 1.48 meV, respectively. A linear dependence of the exciton line intensity on excitation power evidences negligible concentration of nonradiative recombination centers in the layers. © 2000 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
71.35.-y Excitons and related phenomena

Multilayered gated lateral quantum dot devices

C.-T. Liang, M. Y. Simmons, C. G. Smith, Gil-Ho Kim, D. A. Ritchie, and M. Pepper

Appl. Phys. Lett. 76, 1134 (2000); http://dx.doi.org/10.1063/1.125961 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We describe a detailed device fabrication technique for the formation of a lateral quantum dot using a multilayered gated design. In our versatile system, a quantum dot is electrostatically defined by a split gate and two overlaying finger gates which introduce entrance and exit barriers to the dot. Periodic and continuous conductance oscillations arising from Coulomb charging effects are clearly observed in the transport properties at low temperatures. © 2000 American Institute of Physics.
Show PACS
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.35.Ds Quantum interference devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Analysis of the turn-off dynamics in polymer light-emitting diodes

D. J. Pinner, R. H. Friend, and N. Tessler

Appl. Phys. Lett. 76, 1137 (2000); http://dx.doi.org/10.1063/1.125962 (3 pages) | Cited 30 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present experimental techniques to analyze the electroluminescence (EL) of polymer light-emitting diodes following the removal of an applied voltage pulse. We explain the fast modulation of the EL intensity at turn-off in terms of the sudden reduction of the Langevin recombination rate, and extract the time evolution the device’s internal electric field at the recombination zone during the application of a voltage pulse. The results are compared to, and found to be consistent with, those of simple numerical modeling. The subsequent long-lived EL tail is analyzed to give the time evolution of the carrier distributions at the recombination zone once the voltage pulse has been removed. © 2000 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence

Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures

G. Ansaripour, G. Braithwaite, M. Myronov, O. A. Mironov, E. H. C. Parker, and T. E. Whall

Appl. Phys. Lett. 76, 1140 (2000); http://dx.doi.org/10.1063/1.125963 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated the energy loss rate of hot holes as a function of carrier temperature TC in p-type inverted modulation-doped (MD) Si/SiGe heterostructures over the carrier sheet density range (3.5–13)×1011 cm−2, at lattice temperatures of 0.34 and 1.8 K. It is found that the energy loss rate (ELR) depends significantly upon the carrier sheet density, n2D. Such an n2D dependence of ELR has not been observed previously in p-type SiGe MD structures. The extracted effective mass decreases as n2D increases, which is in agreement with recent measurements on a gated inverted sample. It is shown that the energy relaxation of the two-dimensional hole gases is dominated by unscreened acoustic phonon scattering and a deformation potential of 3.0±0.4 eV is deduced. © 2000 American Institute of Physics.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Fq High-field and nonlinear effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Band structure calculation of field emission from AlxGa1−xN as a function of stoichiometry

M. S. Chung, N. M. Miskovsky, P. H. Cutler, and N. Kumar

Appl. Phys. Lett. 76, 1143 (2000); http://dx.doi.org/10.1063/1.125964 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The field emission current density j from the ternary alloys AlxGa1−xN is theoretically calculated as a function of stoichiometry. The material parameters of AlxGa1−xN are obtained as weighted averages of those of AlN and GaN. Using the method of W. W. Lui and M. Fukuma [J. Appl. Phys. 60, 1555(1986)], the transmission coefficients are numerically calculated using Airy functions that are solutions of the Schrödinger equation in a piecewise linear potential region. Band structure effects in the calculation of j are included using the projection of the energy ellipsoids on the emission surfaces. The results for j show a strong dependence of the field emission on the stoichiometric composition, which reflects the composition dependence of the electron affinity. The Fowler–Nordheim plots and calculated field electron energy distribution curves both exhibit structures which suggest different field-dependent transmission probabilities in the low and high field regimes. © 2000 American Institute of Physics.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
85.45.Db Field emitters and arrays, cold electron emitters
71.20.Nr Semiconductor compounds
61.66.Bi Elemental solids
61.66.Dk Alloys

Conduction-band offset of single InAs monolayers on GaAs

Raffaele Colombelli, Vincenzo Piazza, Antonio Badolato, Marco Lazzarino, Fabio Beltram, Winston Schoenfeld, and Pierre Petroff

Appl. Phys. Lett. 76, 1146 (2000); http://dx.doi.org/10.1063/1.125965 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A determination of the InAs/GaAs band-offset energy is presented. Electronic-transport analysis, based on capacitance-voltage and deep-level transient spectroscopy techniques, demonstrates high crystalline quality of our sample and yields a band-offset estimate of 0.69 eV, corresponding to a band-offset ratio of 7030. The present results agree well with reported theoretical values and allow the accurate modeling of electronic states in GaAs/AlGaAs heterostructures containing InAs ultrathin layers. © 2000 American Institute of Physics.
Show PACS
73.20.At Surface states, band structure, electron density of states
71.55.Eq III-V semiconductors
71.20.Nr Semiconductor compounds
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition

K. S. Kim, M. G. Cheong, C.-H. Hong, G. M. Yang, K. Y. Lim, E.-K. Suh, and H. J. Lee

Appl. Phys. Lett. 76, 1149 (2000); http://dx.doi.org/10.1063/1.125966 (3 pages) | Cited 15 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A two-band model involving the heavy- and light-hole bands was adopted to analyze the temperature-dependent Hall effect measured on Mg-doped p-type GaN epilayers. At 300 K, the hole concentration was determined to be nearly twice the Hall concentration estimated from the measured Hall coefficient, meanwhile the Hall mobility of heavy hole turned out to be only half of the measured one. It is shown that the scattering by space charge and acoustic deformation potential is anomalously enhanced in Mg-doped GaN, and that the light hole affects conspicuously the observed transport parameters. © 2000 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Direct determination of the Andreev reflection probability by means of point contact spectroscopy

M. Jakob, H. Stahl, J. Knoch, J. Appenzeller, B. Lengeler, H. Hardtdegen, and H. Lüth

Appl. Phys. Lett. 76, 1152 (2000); http://dx.doi.org/10.1063/1.125967 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
In this letter, we describe a technique for determining the Andreev reflection probability of electrons impinging on a semiconductor–superconductor interface. A two-dimensional electron gas (2DEG) in an InGaAs/InP heterostructure is linked to a niobium superconductor. A point contact in the 2DEG emits ballistic electrons and detects the reflected carriers. The vast majority of the detected carriers are retroreflected holes because of our specific sample setup. We have found an Andreev reflection probability of up to 20%. The experimental results are compared with the predictions of two theoretical models. © 2000 American Institute of Physics.
Show PACS
73.23.Ad Ballistic transport
74.45.+c Proximity effects; Andreev reflection; SN and SNS junctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors

Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

M. Wraback, H. Shen, J. C. Carrano, T. Li, J. C. Campbell, M. J. Schurman, and I. T. Ferguson

Appl. Phys. Lett. 76, 1155 (2000); http://dx.doi.org/10.1063/1.125968 (3 pages) | Cited 44 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A femtosecond optically detected time-of-flight technique that monitors the change in the electroabsorption associated with the transport of photogenerated carriers in a GaN p–i–n diode has been used to determine the room-temperature electron transit time and steady-state velocity as a function of electric field. The peak electron velocity of 1.9×107 cm/s, corresponding to a transit time of 2.5 ps, is attained at 225 kV/cm. The shape of the velocity-field characteristic is in qualitative agreement with theoretical predictions. © 2000 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
78.20.Jq Electro-optical effects
78.47.-p Spectroscopy of solid state dynamics
73.50.Pz Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close