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28 Feb 2000

Volume 76, Issue 9, pp. 1083-1210

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Photon noise and correlations in semiconductor cascade lasers

Farhan Rana and Rajeev J. Ram

Appl. Phys. Lett. 76, 1083 (2000); http://dx.doi.org/10.1063/1.125946 (3 pages)

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A comprehensive model for photon noise and correlations in semiconductor cascade lasers is presented. Photon emission events in different gain sections of cascade lasers are correlated. These correlations are found to be positive and arise because the gain sections are connected electrically. The scaling of photon correlations and intensity noise with the number of cascade sections is discussed. The model presented in this letter is applicable to a variety of cascade laser structures including bipolar interband cascade lasers and unipolar intersubband cascade lasers. For comparison, photon noise and correlations in parallel lasers arrays are also discussed. © 2000 American Institute of Physics.
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42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Poling of soda-lime glass for hybrid glass/polymer electro-optic modulators

Y. Enami, P. Poyhonen, D. L. Mathine, A. Bashar, P. Madasamy, S. Honkanen, B. Kippelen, N. Peyghambarian, S. R. Marder, A. K-Y. Jen, and J. Wu

Appl. Phys. Lett. 76, 1086 (2000); http://dx.doi.org/10.1063/1.125947 (3 pages) | Cited 12 times

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We report on a poling process of soda-lime glasses that reduces their surface conductivity by five orders of magnitude. We show that this process enables the in-plane poling of high Tg (180 °C) electro-optic (EO) polymers coated on ion-exchanged channel waveguides fabricated in soda-lime glasses for hybrid modulators. © 2000 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.70.Ce Glasses, quartz
42.70.Jk Polymers and organics
73.25.+i Surface conductivity and carrier phenomena
42.79.Gn Optical waveguides and couplers
42.86.+b Optical workshop techniques

Soft proton exchange on periodically poled LiNbO3: A simple waveguide fabrication process for highly efficient nonlinear interactions

L. Chanvillard, P. Aschiéri, P. Baldi, D. B. Ostrowsky, M. de Micheli, L. Huang, and D. J. Bamford

Appl. Phys. Lett. 76, 1089 (2000); http://dx.doi.org/10.1063/1.125948 (3 pages) | Cited 22 times

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We report a simple fabrication process for realizing waveguides on periodically poled lithium niobate which preserves both the nonlinearity and the domain inversion. This so-called soft proton exchange has been used to generate highly efficient optical parametric fluorescence in the 1.48–2.01 μm region using a pump around 830 nm. The measured normalized efficiency is 130% W−1 cm−2 for an effective interaction length of 1.3 cm. This experimental figure is very close to the maximum theoretically predicted value of 140% W−1 cm−2. © 2000 American Institute of Physics.
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42.65.Wi Nonlinear waveguides
42.82.Et Waveguides, couplers, and arrays
42.86.+b Optical workshop techniques
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
42.65.Yj Optical parametric oscillators and amplifiers
78.55.Hx Other solid inorganic materials
42.79.Gn Optical waveguides and couplers
82.39.Wj Ion exchange, dialysis, osmosis, electro-osmosis, membrane processes

Single-mode tunable, pulsed, and continuous wave quantum-cascade distributed feedback lasers at λ ≅ 4.6–4.7 μm

Rüdeger Köhler, Claire Gmachl, Alessandro Tredicucci, Federico Capasso, Deborah L. Sivco, S. N. George Chu, and Alfred Y. Cho

Appl. Phys. Lett. 76, 1092 (2000); http://dx.doi.org/10.1063/1.125987 (3 pages) | Cited 31 times

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Single-mode tunable quantum-cascade distributed feedback lasers emitting at 4.6–4.7 μm wavelength are reported. The lasers employ strained heterostructure material with global strain compensation to provide the large band offset needed for high-performance short wavelength operation. Pulsed, continuously tunable single-mode emission is achieved from 90 to 300 K with a tuning range of 65 nm. Peak output power levels of 100 mW at room temperature are obtained. In continuous-wave operation, current tunable single-mode emission is demonstrated around liquid-nitrogen temperature with a tuning range of 20 nm (over a current range of 450 mA). The maximum output power in continuous wave at 80 K is 150 mW. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.35.Gy Mechanical properties; surface strains
42.60.Pk Continuous operation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Spatial beam switching and bistability in a diode ring laser

M. F. Booth, A. Schremer, and J. M. Ballantyne

Appl. Phys. Lett. 76, 1095 (2000); http://dx.doi.org/10.1063/1.125949 (3 pages) | Cited 17 times

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We report bistable switching of the output direction in certain triangular diode ring lasers. These lasers operate unidirectionally at large drive currents, with up to 98% of the output power emerging from either the clockwise or the counterclockwise direction. The preferred direction can switch back and forth, with a large hysteresis loop, as the drive current is varied. Up to 20 mW of optical power changes direction at each switch. We propose an explanation based on the theory of two-mode competition via gain saturation. © 2000 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Temperature dependence of the responsivity of II–VI ultraviolet photodiodes

I. K. Sou, Z. H. Ma, Z. Q. Zhang, and G. K. L. Wong

Appl. Phys. Lett. 76, 1098 (2000); http://dx.doi.org/10.1063/1.125950 (3 pages) | Cited 14 times

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High-temperature dependence, up to 150 °C, of the photoresponsivity of ZnS, ZnSTe, and ZnSSe photodiodes was investigated in this study. It was found that, in general, the responsivity at higher temperatures will shift to longer wavelengths because of band-gap narrowing. A remarkable observation is that the near-band-edge responsivities of these diodes increase at higher temperature. We believe that this observation is attributed to the change of the density-of-state distribution due to lattice expansion at high temperatures, and a simplified model is used to illustrate this hypothesis. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Pw Imaging detectors and sensors
71.20.Nr Semiconductor compounds
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