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Applied Physics Letters / Volume 77 / Issue 1 / DEVICE PHYSICS

Appl. Phys. Lett. 77, 139 (2000); http://dx.doi.org/10.1063/1.126902 (3 pages)

Reproducible switching effect in thin oxide films for memory applications

A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer

IBM Research, Zurich Research Laboratory, CH–8803 Rüschlikon, Switzerland

(Received 13 March 2000; accepted 15 May 2000)

Thin oxide films with perovskite or related structures and with transition metal doping show a reproducible switching in the leakage current with a memory effect. Positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns. The ratio between these two states is typically about 20 but can exceed six orders of magnitude. Once a low-impedance state has been achieved it persists without a power connection for months, demonstrating the feasibility of nonvolatile memory elements. Even multiple levels can be addressed to store two bits in such a simple capacitor-like structure. © 2000 American Institute of Physics.

© 2000 American Institute of Physics

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KEYWORDS and PACS

Keywords

strontium compounds, chromium, insulating thin films, leakage currents, electric impedance, switching, random-access storage

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.126902

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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