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4 Sep 2000

Volume 77, Issue 10, pp. 1413-1560

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Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

Yue-Ming Hsin, Shih-Tzung Hsu, and Chen-Chung Fan

Appl. Phys. Lett. 77, 1538 (2000); http://dx.doi.org/10.1063/1.1290602 (2 pages) | Cited 2 times

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GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabricated for the study of electron saturation velocity (vsat) in GaInP. The necessary composite design at the base–collector junction, which effectively reduces the conduction band spike and avoids the premature Kirk effect, enables us to use the Kirk effect to study vsat. The deduced electron saturation velocity in GaInP is ∼ 5×106 cm/sec. © 2000 American Institute of Physics.
Show PACS
85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors

Photovoltaic heterostructure devices made of sequentially adsorbed poly(phenylene vinylene) and functionalized C60

H. Mattoussi, M. F. Rubner, F. Zhou, J. Kumar, S. K. Tripathy, and L. Y. Chiang

Appl. Phys. Lett. 77, 1540 (2000); http://dx.doi.org/10.1063/1.1290723 (3 pages) | Cited 35 times

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We report on the preparation and characterization of rectifying photovoltaic heterostructure devices made of poly(phenylene vinylene), PPV, and C60. The heterojunctions were built from solution using the technique of layer-by-layer sequential adsorption. This technique permits one to control the heterostructure at the molecular scale. Upon illumination with a laser beam, the devices showed large photoresponses (current and voltage) that resulted from a photoinduced electron transfer between the PPV (donor layer) and the C60 (acceptor layer). The photocurrent was found to increase with the laser power and with the photon energy of the incident radiation. Also, a constant high photovoltage response of ∼700–800 mV was measured. Analysis of the time dependence of the photocurrent rise and decay, when the device was illuminated with a modulated square wave signal (chopped laser beam), permitted us to draw an analogy between the present heterojunction and a circuit made of a capacitor and a resistance in series. © 2000 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
73.61.Wp Fullerenes and related materials
85.60.-q Optoelectronic devices
73.50.Pz Photoconduction and photovoltaic effects

GaNAs resonant-cavity avalanche photodiode operating at 1.064 μm

G. S. Kinsey, D. W. Gotthold, A. L. Holmes, and J. C. Campbell

Appl. Phys. Lett. 77, 1543 (2000); http://dx.doi.org/10.1063/1.1308272 (2 pages) | Cited 14 times

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A resonant-cavity avalanche photodiode using a GaNAs absorption region grown on GaAs has been demonstrated. The peak quantum efficiency was 59% at 1.064 μm with a full width at half maximum of 11 nm. The absorption coefficient was determined to be α = 9×103/cm at this wavelength. The devices exhibited gain up to 100 at a low breakdown voltage of 13 V. © 2000 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Parametric amplification in a torsional microresonator

Dustin W. Carr, Stephane Evoy, Lidija Sekaric, H. G. Craighead, and J. M. Parpia

Appl. Phys. Lett. 77, 1545 (2000); http://dx.doi.org/10.1063/1.1308270 (3 pages) | Cited 11 times

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We observe parametric amplification in a torsional micron-scale mechanical resonator. An applied voltage is used to make a dynamic change to the torsional spring constant. Oscillating the spring constant at twice the resonant frequency results in a phase dependent amplification of the resonant motion. Our results agree well with the theory of parametric amplification. By taking swept frequency measurements, we observe interesting structure in the resonant response curves. © 2000 American Institute of Physics.
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07.10.Cm Micromechanical devices and systems

Staircase band gap Si1−xGex/Si photodetectors

Zhiyun Lo, Ruolian Jiang, Youdou Zheng, Lan Zang, Zhizhong Chen, Shunming Zhu, Xuemei Cheng, and Xiabing Liu

Appl. Phys. Lett. 77, 1548 (2000); http://dx.doi.org/10.1063/1.1286958 (3 pages) | Cited 2 times

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We fabricated Si1−xGex/Si photodetectors by using a staircase band gap Si1−xGex/Si structure. These devices exhibit a high optical response with a peak responsive wavelength at 0.96 μm and a responsivity of 27.8 A/W at −5 V bias. Excellent electrical characteristics evidenced by good diode rectification are also demonstrated. The dark current density is 0.1 pA/μm2 at −2 V bias, and the breakdown voltage is −27 V. The high response is explained as the result of a staircase band gap by theoretical analysis. © 2000 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.40.Ei Rectification
71.20.Nr Semiconductor compounds
85.60.Dw Photodiodes; phototransistors; photoresistors
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